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IPB065N03LGATMA1

IPB065N03LGATMA1
Mfr. #:
IPB065N03LGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB065N03LGATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
50 A
Rds On - Resistencia de la fuente de drenaje:
5.4 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
11 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
56 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Serie:
OptiMOS 3
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
34 S
Otoño:
3.4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4.2 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
21 ns
Tiempo típico de retardo de encendido:
5.5 ns
Parte # Alias:
G IPB065N03L IPB65N3LGXT SP000254709
Unidad de peso:
0.139332 oz
Tags
IPB065N03, IPB065N0, IPB065, IPB06, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 30V, 50A, TO-263-3; Transistor Polarity:N Channel; Continuous Drai
***ure Electronics
Single N-Channel 30 V 6.5 mOhm 23 nC OptiMOS™ Power Mosfet - D2PAK
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N-CH, 30V, 50A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 9.5 mOhm 9.6 nC HEXFET® Power Mosfet - DPAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***roFlash
Power Field-Effect Transistor, 56A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Diss
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 13 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***emi
PowerTrench® MOSFET, N-Channel, 30V, 58A, 9mΩ
***ark
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,13A I(D),TO-252AA
***ure Electronics
N-Channel 30 V 58 A 9 mOhm PowerTrench Mosfet TO-252AA
*** Source Electronics
MOSFET N-CH 30V 58A DPAK / Trans MOSFET N-CH 30V 13A 3-Pin(2+Tab) DPAK T/R
***ment14 APAC
MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Source Voltage Vds:30V; On Resistance
***roFlash
Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***nell
MOSFET, N-CH, 30V, 58A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 55W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***(Formerly Allied Electronics)
MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 7.5Milliohms; ID 65A; D-Pak (TO-252AA); PD 75W
***ure Electronics
Single N-Channel 30V 10 mOhm 10 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***ment14 APAC
N CHANNEL MOSFET, 30V, 65A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:65A;
*** Stop Electro
Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
Mosfet Transistor; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:65A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pins Rohs Compliant: Yes
***emi
PowerTrench® MOSFET, N-Channel, 30V, 55A, 11.5mΩ
***r Electronics
Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0094ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation P
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***Yang
Transistor MOSFET Array Dual N-CH 30V 43A/75A 8-Pin PQFN T/R - Tape and Reel
***ark
PT7 N 30/20 and PT8 N 30/12 S in Power Stage56 - 8LD, PQFN, NON-JEDEC, 5.0X6.0MM, DUAL DAP
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
*** Stop Electro
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.
***nell
MOSFET, N-CH, 30V, 18A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.01ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.5W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
IPB065N03LGATMA1
DISTI # V72:2272_06384772		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		159
  • 100:$0.7924
  • 25:$0.9188
  • 10:$1.0209
  • 1:$1.3160
IPB065N03LGATMA1
DISTI # V36:1790_06384772		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$0.4316
  • 500000:$0.4319
  • 100000:$0.4602
  • 10000:$0.5114
  • 1000:$0.5200
IPB065N03LGATMA1
DISTI # IPB065N03LGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 50A TO-263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		11822In Stock
  • 500:$0.7613
  • 100:$0.9216
  • 10:$1.1820
  • 1:$1.3200
IPB065N03LGATMA1
DISTI # IPB065N03LGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 50A TO-263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		11822In Stock
  • 500:$0.7613
  • 100:$0.9216
  • 10:$1.1820
  • 1:$1.3200
IPB065N03LGATMA1
DISTI # IPB065N03LGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 50A TO-263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		11000In Stock
  • 10000:$0.4980
  • 5000:$0.5174
  • 2000:$0.5446
  • 1000:$0.5835
IPB065N03LGATMA1
DISTI # 26195584		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		159
  • 14:$1.3160
IPB065N03LGATMA1
DISTI # SP000254709		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R (Alt: SP000254709)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€0.4619
  • 6000:€0.4919
  • 4000:€0.5409
  • 2000:€0.6059
  • 1000:€0.7769
IPB065N03LGXT
DISTI # IPB065N03LGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB065N03LGATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.4699
  • 6000:$0.4789
  • 4000:$0.4949
  • 2000:$0.5139
  • 1000:$0.5329
IPB065N03LGATMA1
DISTI # 47W3466		Infineon Technologies AGMOSFET, N CHANNEL, 30V, 50A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0054ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V RoHS Compliant: Yes0
  • 500:$0.7110
  • 100:$0.8050
  • 10:$1.0400
  • 1:$1.2200
IPB065N03LGATMA1
DISTI # 726-IPB065N03LGATMA1		Infineon Technologies AGMOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant		2728
  • 1:$1.2100
  • 10:$1.0300
  • 100:$0.7970
  • 500:$0.7040
  • 1000:$0.5560
  • 2000:$0.4930
  • 10000:$0.4750
IPB065N03L G
DISTI # 726-IPB065N03LG		Infineon Technologies AGMOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant		1910
  • 1:$1.2100
  • 10:$1.0300
  • 100:$0.7970
  • 500:$0.7040
  • 1000:$0.5560
  • 2000:$0.4930
  • 10000:$0.4750
IPB065N03LGATMA1Infineon Technologies AGPower Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		2000
  • 1000:$0.4200
  • 500:$0.4400
  • 100:$0.4600
  • 25:$0.4800
  • 1:$0.5200
IPB065N03LGATMA1
DISTI # 2212897		Infineon Technologies AGMOSFET, N-CH, 30V, 50A, TO-263-3
RoHS: Compliant		133
  • 2000:$0.7430
  • 1000:$0.8380
  • 500:$1.0600
  • 100:$1.2000
  • 10:$1.5500
  • 1:$1.8200
IPB065N03LGATMA1
DISTI # 2212897		Infineon Technologies AGMOSFET, N-CH, 30V, 50A, TO-263-3533
  • 500:£0.3250
  • 250:£0.3470
  • 100:£0.3690
  • 25:£0.4760
  • 5:£0.5300
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 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de IPB065N03LGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,21 US$
1,21 US$
10
1,03 US$
10,30 US$
100
0,80 US$
79,70 US$
500
0,70 US$
352,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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