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DMN3070SSN-7

DMN3070SSN-7
Mfr. #:
DMN3070SSN-7
Fabricante:
Diodes Incorporated
Descripción:
MOSFET 30V N-CH MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMN3070SSN-7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMN3070SSN-7 DatasheetDMN3070SSN-7 Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SC-59-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
4.2 A
Rds On - Resistencia de la fuente de drenaje:
24 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
13.2 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
780 mW
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
DMN3070
Tipo de transistor:
1 N-Channel
Marca:
Diodos incorporados
Otoño:
4.1 ns
Tipo de producto:
MOSFET
Hora de levantarse:
20.1 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
4.4 ns
Tiempo típico de retardo de encendido:
4.3 ns
Unidad de peso:
0.000282 oz
Tags
DMN307, DMN30, DMN3, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R
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MOSFET, N-CH, 30V, 3.6A, SOT-23 ROHS COMPLIANT: YES
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***Yang
Transistor: N-MOSFET, unipolar, 30V, 5A, 29ohm, 1.3W, -55+150 deg.C, SMD, SOT23
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
***ure Electronics
Single N-Channel 30 V 37 mOhm 6.8 nC HEXFET® Power Mosfet - SOT-23
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
***et
Trans MOSFET N-CH 30V 5A 3-Pin SOT-23 T/R
***ark
N CH MOSFET, 30V, 5A, 3-SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; No. of Pins:3 ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
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DMP3099L Series 30 V 3.8 A P-Channel Enhancement Mode Mosfet - SOT-23-3
***ical
Trans MOSFET P-CH 30V 3.8A Automotive 3-Pin SOT-23 T/R
***nell
MOSFET, AEC-Q101, P-CH, -3.8A, -30V; Transistor Polarity: P Channel; Drain Source Voltage Vds: 30V; Continuous Drain Current Id: 3.8A; On Resistance Rds(on): 0.065ohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V
***Yang
Transistor: N-MOSFET, unipolar, 30V, 5.3A, 27ohm, 1.3W, -55+150 deg.C, SMD, SOT23
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
*** Source Electronics
MOSFET N-CH 30V 5.3A SOT-23-3 / Trans MOSFET N-CH 30V 5.3A 3-Pin SOT-23 T/R
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Single N-Channel 30 V 40 mOhm 2.6 nC HEXFET® Power Mosfet - SOT-23
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
*** Stop Electro
Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:5.3A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.027ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 30V, 5.3A, SOT23-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 98Milliohms;ID -3A;Micro3;PD 1.25W;-55degc
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
***el Electronic
Surface Mount Ceramic Multilayer Capacitor 0.0022uF 10% X7R 100V 0805 Paper T/R
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Single P-Channel 30 V 165 mOhm 14 nC HEXFET® Power Mosfet - MICRO-3
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-3A; On Resistance, Rds(on):98mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:Micro3 ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; Low Profile (less than 1.1mm); P-Channel MOSFET; SOT-23 Footprint | Target Applications: DC Switches; Load Switch
***nell
MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 1.25W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Temperature: 25°C; External Depth: 2.5mm; External Length / Height: 1.12mm; External Width: 3.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 24A; SMD Marking: 1H; Tape Width: 8mm; Termination Type: Surface Mount Device; Voltage Vgs th Max: -2.5V
***ure Electronics
DMP3056L Series 30 V 4.3 A P-Channel Enhancement Mode Mosfet - SOT-23-3
***ark
MOSFET, P-CH, -30V, -4.3A, SOT23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes
***el Electronic
Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 50m Ω @ 6A, 10V 4.3A Ta -55°C~150°C TJ MOSFET P-CH 30V 4.3A SOT23
***nell
MOSFET, P-CH, -30V, -4.3A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.1V; Power Dissipation Pd: 1.38W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Parte # Mfg. Descripción Valores Precio
DMN3070SSN-7
DISTI # V72:2272_06698239		Zetex / Diodes IncTrans MOSFET N-CH 30V 4.2A 3-Pin SC-59 T/R
RoHS: Compliant		2498
  • 1000:$0.1009
  • 500:$0.1354
  • 250:$0.1368
  • 100:$0.1382
  • 25:$0.2579
  • 10:$0.2605
  • 1:$0.3515
DMN3070SSN-7
DISTI # DMN3070SSN-7DICT-ND		Diodes IncorporatedMOSFET N-CH 30V 4.2A SC59
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5857In Stock
  • 1000:$0.1275
  • 500:$0.1700
  • 100:$0.2479
  • 10:$0.3610
  • 1:$0.4600
DMN3070SSN-7
DISTI # DMN3070SSN-7DIDKR-ND		Diodes IncorporatedMOSFET N-CH 30V 4.2A SC59
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5857In Stock
  • 1000:$0.1275
  • 500:$0.1700
  • 100:$0.2479
  • 10:$0.3610
  • 1:$0.4600
DMN3070SSN-7
DISTI # DMN3070SSN-7DITR-ND		Diodes IncorporatedMOSFET N-CH 30V 4.2A SC59
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.1134
DMN3070SSN-7
DISTI # 30351047		Zetex / Diodes IncTrans MOSFET N-CH 30V 4.2A 3-Pin SC-59 T/R
RoHS: Compliant		2498
  • 1000:$0.1009
  • 500:$0.1354
  • 250:$0.1368
  • 100:$0.1382
  • 81:$0.2579
DMN3070SSN-7
DISTI # DMN3070SSN-7		Diodes IncorporatedTrans MOSFET N-CH 30V 5.1A 3-Pin SC-59 T/R - Tape and Reel (Alt: DMN3070SSN-7)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0749
  • 6000:$0.0709
  • 12000:$0.0679
  • 18000:$0.0649
  • 30000:$0.0629
DMN3070SSN-7
DISTI # 70438084		Diodes IncorporatedMOSFET N-channel 30V 4.2A SC59
RoHS: Compliant		0
  • 250:$0.1610
  • 750:$0.1410
  • 1500:$0.1260
  • 3000:$0.1140
DMN3070SSN-7
DISTI # 621-DMN3070SSN-7		Diodes IncorporatedMOSFET 30V N-CH MOSFET
RoHS: Compliant		5872
  • 1:$0.3700
  • 10:$0.2770
  • 100:$0.1500
  • 1000:$0.1130
  • 3000:$0.0970
DMN3070SSN-7
DISTI # 7904606		Zetex / Diodes IncMOSFET N-CHANNEL 30V 4.2A SC59, PK750
  • 25:£0.1790
  • 150:£0.1160
  • 750:£0.1100
  • 1500:£0.0950
DMN3070SSN-7
DISTI # 7904606P		Zetex / Diodes IncMOSFET N-CHANNEL 30V 4.2A SC59, RL8700
  • 150:£0.1160
  • 750:£0.1100
  • 1500:£0.0950
DMN3070SSN-7
DISTI # C1S205700479071		Diodes IncorporatedTrans MOSFET N-CH 30V 4.2A 3-Pin SC-59 T/R
RoHS: Compliant		2498
  • 250:$0.1368
  • 100:$0.1382
  • 25:$0.2579
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Disponibilidad
Valores:
Available
En orden:
1989
Ingrese la cantidad:
El precio actual de DMN3070SSN-7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,36 US$
0,36 US$
10
0,28 US$
2,77 US$
100
0,15 US$
15,00 US$
1000
0,11 US$
113,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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