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IRFH5306TRPBF

IRFH5306TRPBF
Mfr. #:
IRFH5306TRPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 7.8nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFH5306TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH5306TRPBF DatasheetIRFH5306TRPBF Datasheet (P4-P6)IRFH5306TRPBF Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PQFN-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
44 A
Rds On - Resistencia de la fuente de drenaje:
8.1 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
7.8 nC
Pd - Disipación de energía:
26 W
Configuración:
Único
Embalaje:
Carrete
Altura:
0.83 mm
Longitud:
6 mm
Tipo de transistor:
1 N-Channel
Ancho:
5 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
4000
Subcategoría:
MOSFET
Parte # Alias:
SP001556452
Tags
IRFH5306, IRFH53, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***ied Electronics & Automation
MOSFET; N-Channel; 30V; 44A; 8.1 mOhm max; 7.8 nC Qg; PQFN 5x6
***et
Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R
***ark
N CHANNEL MOSFET, 30V, 44A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0081ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
Parte # Mfg. Descripción Valores Precio
IRFH5306TRPBF
DISTI # IRFH5306TRPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 15A 5X6 PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRFH5306TRPBF
    DISTI # 70019241    		Infineon Technologies AGMOSFET,N-Channel,30V,44A,8.1 mOhm max,7.8 nC Qg,PQFN 5x6
    RoHS: Compliant    		0
    • 4000:$1.1800
    • 8000:$1.1560
    • 20000:$1.1210
    • 40000:$1.0740
    • 100000:$1.0030
    IRFH5306TRPBFInternational RectifierPower Field-Effect Transistor, 15A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
    RoHS: Compliant    		2000
    • 1000:$0.3800
    • 500:$0.4000
    • 100:$0.4200
    • 25:$0.4400
    • 1:$0.4700
    IRFH5306TRPBF
    DISTI # 942-IRFH5306TRPBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 8.1mOhms 7.8nC
    RoHS: Compliant    		0
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      Disponibilidad
      Valores:
      Available
      En orden:
      4000
      Ingrese la cantidad:
      El precio actual de IRFH5306TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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