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IGW30N60H3

IGW30N60H3
Mfr. #:
IGW30N60H3
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors 600V HI SPEED SW IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IGW30N60H3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.95 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
60 A
Pd - Disipación de energía:
187 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
HighSpeed 3
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IGW30N60H3FKSA1 IGW3N6H3XK SP000852242
Unidad de peso:
0.014110 oz
Tags
IGW30N60H, IGW30N60, IGW30N6, IGW30N, IGW3, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247
***ical
Trans IGBT Chip N=-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube
***p One Stop Japan
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
***et
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247
***et Europe
Trans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube
***ronik
IGBT 600V 60A 2.40V TO247-3
***i-Key
IGBT 600V 60A 187W TO247-3
***ark
Transistor, Igbt, 600V, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.95V; Power Dissipation Pd:187W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. TRANSISTOR, IGBT, 600V, 60A, TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP™ Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
TRANSISTOR, IGBT, 600V, 60A, TO-247; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.95V; Dissipazione di Potenza Pd:187W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP™ Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
Parte # Mfg. Descripción Valores Precio
IGW30N60H3FKSA1
DISTI # 24580267		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		189
  • 7:$1.4517
IGW30N60H3
DISTI # 30577650		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247
RoHS: Compliant		120
  • 100:$2.5118
  • 50:$2.7157
  • 10:$3.3533
  • 5:$5.2530
IGW30N60H3FKSA1
DISTI # 26197177		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		42
  • 4:$1.7430
IGW30N60H3FKSA1
DISTI # V99:2348_06377101		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		42
  • 1:$1.7430
IGW30N60H3FKSA1
DISTI # V36:1790_06377101		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240:$1.5240
IGW30N60H3
DISTI # SP000852242		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube (Alt: SP000852242)
Min Qty: 1
Container: Tube		Europe - 103
    IGW30N60H3
    DISTI # IGW30N60H3FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW30N60H3FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
      IGW30N60H3
      DISTI # IGW30N60H3      		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube - Bulk (Alt: IGW30N60H3)
      Min Qty: 191
      Container: Bulk      		Americas - 0
        IGW30N60H3FKSA1
        DISTI # 13AC9001        		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.95V,Power Dissipation Pd:187W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes
        RoHS: Compliant        		488
        • 1:$1.3400
        • 10:$1.3400
        • 25:$1.3400
        • 50:$1.3400
        • 100:$1.3400
        • 250:$1.3400
        • 500:$1.3400
        IGW30N60H3
        DISTI # 726-IGW30N60H3        		Infineon Technologies AGIGBT Transistors 600V HI SPEED SW IGBT
        RoHS: Compliant        		337
        • 1:$3.4700
        • 10:$2.9500
        • 100:$2.5500
        • 250:$2.4200
        • 500:$2.1700
        IGW30N60H3Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
        RoHS: Compliant        		20
        • 1000:$1.7300
        • 500:$1.8200
        • 100:$1.8900
        • 25:$1.9800
        • 1:$2.1300
        IGW30N60H3FKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
        RoHS: Compliant        		1680
        • 1000:$1.4900
        • 500:$1.5700
        • 100:$1.6300
        • 25:$1.7000
        • 1:$1.8300
        IGW30N60H3FKSA1
        DISTI # 1107737        		Infineon Technologies AGIn a Pack of 6, Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, PK
        Min Qty: 6
        Container: Package        		240
        • 6:$4.4440
        • 12:$3.5230
        • 60:$3.2870
        • 120:$3.0500
        • 300:$2.8860
        IGW30N60H3FKSA1
        DISTI # 1458592        		Infineon Technologies AGIn a Tube of 30, Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, TU
        Min Qty: 30
        Container: Tube        		0
        • 30:$3.5600
        IGW30N60H3
        DISTI # IGW30N60H3        		Infineon Technologies AGTransistor: IGBT,600V,30A,187W,TO247-3144
        • 100:$2.1300
        • 25:$2.5200
        • 5:$3.1600
        • 1:$3.4300
        IGW30N60H3
        DISTI # IGW30N60H3        		Infineon Technologies AGTransistor: IGBT,600V,30A,187W,TO247-3144
        • 100:$2.1200
        • 25:$2.5100
        • 5:$3.1500
        • 1:$3.4200
        IGW30N60H3
        DISTI # IGBT1229        		Infineon Technologies AGIGBT600V60A2.40VTO247-3
        RoHS: Compliant        		Stock DE - 6150Stock HK - 0Stock US - 0
        • 30:$1.9700
        • 60:$1.8500
        • 90:$1.8300
        • 150:$1.7900
        • 240:$1.6800
        IGW30N60H3FKSA1
        DISTI # 2725780        		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 60A, TO-247
        RoHS: Compliant        		482
        • 1000:£2.1400
        • 500:£2.1800
        • 250:£2.2400
        • 100:£2.2800
        • 10:£2.3300
        • 1:£2.3800
        IGW30N60H3FKSA1
        DISTI # 2725780        		Infineon Technologies AGTRANSISTOR, IGBT, 600V, 60A, TO-247
        RoHS: Compliant        		478
        • 100:$2.9700
        • 10:$3.5600
        • 1:$3.7300
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        Disponibilidad
        Valores:
        337
        En orden:
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        Ingrese la cantidad:
        El precio actual de IGW30N60H3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        3,47 US$
        3,47 US$
        10
        2,95 US$
        29,50 US$
        100
        2,55 US$
        255,00 US$
        250
        2,42 US$
        605,00 US$
        500
        2,17 US$
        1 085,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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