SI9933CDY-T1-E3

Mfr. #:: SI9933CDY-T1-E3
Fabricante:: Vishay
Descripción:: IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI9933CDY-T1-E3 Ficha de datos
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Más información:: SI9933CDY-T1-E3 más información

Atributo del producto
Valor de atributo

Fabricante: Vishay Siliconix

categoria de producto: FET: matrices

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SI9933CDY-E3

Unidad de peso: 0.006596 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: 8-SOIC (0.154", 3.90mm Width)

Tecnología: Si

Temperatura de funcionamiento: -50°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 2 Channel

Paquete de dispositivo de proveedor: 8-SO

Configuración: Doble

Tipo FET: 2 P-Channel (Dual)

Potencia máxima: 3.1W

Tipo transistor: 2 P-Channel

Drenaje-a-fuente-voltaje-Vdss: 20V

Entrada-Capacitancia-Ciss-Vds: 665pF @ 10V

Función FET: Puerta de nivel lógico

Corriente-Continuo-Drenaje-Id-25 ° C: 4A

Rds-On-Max-Id-Vgs: 58 mOhm @ 4.8A, 4.5V

Vgs-th-Max-Id: 1.4V @ 250μA

Puerta-Carga-Qg-Vgs: 26nC @ 10V

Disipación de potencia Pd: 2 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 50 C

Otoño: 13 ns

Hora de levantarse: 50 ns

Vgs-Puerta-Fuente-Voltaje: 12 V

Id-corriente-de-drenaje-continua: 4 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Resistencia a la fuente de desagüe de Rds: 58 mOhms

Polaridad del transistor: P-Channel

Tiempo de retardo de apagado típico: 29 ns

Tiempo de retardo de encendido típico: 21 ns

Modo de canal: Mejora

Tags: SI9933CDY-T, SI9933CD, SI9933C, SI9933, SI993, SI99, SI9

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI9933CDY-T1-E3 Descripción

***ure Electronics: Si9933CDY Series Dual P-Channel 20 V 58 mOhm Surface Mount Power Mosfet - SOIC-8

***et: Trans MOSFET Array Dual P-CH -20V -4A 8-Pin SOIC

***nell: MOSFET, PP CH, 20V, 8SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V; Power Dissipation Pd:3.1W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-50°C to +150°C

SI9933CDY-T1-E3 Más información

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI9933CDY-T1-E3 DISTI # V72:2272_09216526	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R RoHS: Compliant	227	100:$0.3264 25:$0.4045 10:$0.4093 1:$0.4844
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3CT-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3313In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3313In Stock	1000:$0.2900 500:$0.3626 100:$0.4895 10:$0.6340 1:$0.7300
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3TR-ND	Vishay Siliconix	MOSFET 2P-CH 20V 4A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.2552
SI9933CDY-T1-E3 DISTI # 25790123	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R RoHS: Compliant	227	100:$0.3264 31:$0.4045
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9933CDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2319 5000:$0.2249 10000:$0.2159 15000:$0.2099 25000:$0.2049
SI9933CDY-T1-E3 DISTI # SI9933CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A 8-Pin SOIC N T/R (Alt: SI9933CDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI9933CDY-T1-E3 DISTI # 16P3887	Vishay Intertechnologies	Trans MOSFET Array Dual P-CH -20V -4A 8-Pin SOIC - Product that comes on tape, but is not reeled (Alt: 16P3887) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.6400 10:$0.5110 25:$0.4700 50:$0.4290 100:$0.3880 250:$0.3540 500:$0.3200
SI9933CDY-T1-E3 DISTI # 16P3887	Vishay Intertechnologies	DUAL P CHANNEL MOSFET, -20V, SOIC,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes	2222	1:$0.6400 10:$0.5110 25:$0.4700 50:$0.4290 100:$0.3880 250:$0.3540 500:$0.3200 1000:$0.2560
SI9933CDY-T1-E3 DISTI # 781-SI9933CDY-E3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs SO-8 RoHS: Compliant	3592	1:$0.6400 10:$0.5110 100:$0.3880 500:$0.3200 1000:$0.2560 2500:$0.2320
SI9933CDY-T1-E3 DISTI # C1S803603830148	Vishay Intertechnologies	MOSFETs RoHS: Compliant	227	100:$0.3264 25:$0.4045 10:$0.4093
SI9933CDY-T1-E3 DISTI # 2101482	Vishay Intertechnologies	MOSFET, PP CH, 20V, 8SOIC RoHS: Compliant	1894	1:$1.0200 10:$0.8090 100:$0.6150 500:$0.5070 1000:$0.4250
SI9933CDY-T1-E3 DISTI # 2101482	Vishay Intertechnologies	MOSFET, PP CH, 20V, 8SOIC RoHS: Compliant	1840	5:£0.4410 25:£0.2690 100:£0.2670 250:£0.2550 500:£0.2110

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Imagen	Parte #	Descripción
	Mfr.#: SI9933CDY-T1-GE3 OMO.#: OMO-SI9933CDY-T1-GE3	MOSFET -20V Vds 12V Vgs SO-8
	Mfr.#: SI9933CDY-T1-E3 OMO.#: OMO-SI9933CDY-T1-E3	MOSFET -20V Vds 12V Vgs SO-8
	Mfr.#: SI9933CDY-T1-E3 OMO.#: OMO-SI9933CDY-T1-E3-VISHAY	IGBT Transistors MOSFET 20V 4.0A 3.1W 58mohm @ 4.5V
	Mfr.#: SI9933CDY-T1-GE3-CUT TAPE OMO.#: OMO-SI9933CDY-T1-GE3-CUT-TAPE-1190	Nuevo y original
	Mfr.#: SI9933C OMO.#: OMO-SI9933C-1190	Nuevo y original
	Mfr.#: SI9933CDY OMO.#: OMO-SI9933CDY-1190	Nuevo y original
	Mfr.#: SI9933CDY-T1 OMO.#: OMO-SI9933CDY-T1-1190	Nuevo y original
	Mfr.#: SI9933CDY-T1-GE3 OMO.#: OMO-SI9933CDY-T1-GE3-VISHAY	MOSFET 2P-CH 20V 4A 8-SOIC
	Mfr.#: SI9933CY-T1 OMO.#: OMO-SI9933CY-T1-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 4500
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El precio actual de SI9933CDY-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,31 US$~~; ~~0,31 US$~~

10: ~~0,29 US$~~; ~~2,92 US$~~

100: ~~0,28 US$~~; ~~27,66 US$~~

500: ~~0,26 US$~~; ~~130,60 US$~~

1000: ~~0,25 US$~~; ~~245,90 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SI9933CDY-T 4
SI9933CD 5
SI9933C 7
SI9933 37
SI993 87
SI99 313
SI9 1126

SI9933CDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes