SISS10DN-T1-GE3

SISS10DN-T1-GE3
Mfr. #:
SISS10DN-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 40V 60A PPAK 1212-8S
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISS10DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SISS10DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Tags
SISS10D, SISS10, SISS1, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 40 V 2.65 mOhm 57 W TrenchFET Gen IV Mosfet - PowerPAK 1212-8S
***ical
Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK 1212-S EP T/R
***et
Trans MOSFET N-CH 40V 31.7A 8-Pin PowerPAK 1212 T/R
***ark
N-Channel 40-V (D-S) Mosfet
***i-Key
MOSFET N-CH 40V 60A PPAK 1212-8S
40V TrenchFET Gen IV and 100V ThunderFET
Vishay 40V TrenchFET Gen IV and 100V ThunderFET Power MOSFETs offer industry-low ON-resistance and low total gate charge. For designers, the low ON-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. Available packages include the TO-220, TO-252, as well as a space-saving, small-outline PowerPAK® option. These devices are 100% Rg and UIS tested, halogen-free and RoHS Compliant.Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SISS10DN-T1-GE3
DISTI # V72:2272_17583088
Vishay IntertechnologiesTrans MOSFET N-CH 40V 31.7A 8-Pin PowerPAK 1212-S EP T/R246
  • 100:$0.6532
  • 25:$0.7527
  • 10:$0.8363
  • 1:$0.9897
SISS10DN-T1-GE3
DISTI # V36:1790_17583088
Vishay IntertechnologiesTrans MOSFET N-CH 40V 31.7A 8-Pin PowerPAK 1212-S EP T/R0
  • 6000000:$0.3995
  • 3000000:$0.3996
  • 600000:$0.4038
  • 60000:$0.4093
  • 6000:$0.4102
SISS10DN-T1-GE3
DISTI # SISS10DN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 40V 60A PPAK 1212-8S
Min Qty: 1
Container: Cut Tape (CT)
7412In Stock
  • 1000:$0.4527
  • 500:$0.5734
  • 100:$0.6941
  • 10:$0.8900
  • 1:$1.0000
SISS10DN-T1-GE3
DISTI # SISS10DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 40V 60A PPAK 1212-8S
Min Qty: 1
Container: Digi-Reel®
7412In Stock
  • 1000:$0.4527
  • 500:$0.5734
  • 100:$0.6941
  • 10:$0.8900
  • 1:$1.0000
SISS10DN-T1-GE3
DISTI # SISS10DN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 40V 60A PPAK 1212-8S
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 6000:$0.3897
  • 3000:$0.4102
SISS10DN-T1-GE3
DISTI # 25817595
Vishay IntertechnologiesTrans MOSFET N-CH 40V 31.7A 8-Pin PowerPAK 1212-S EP T/R246
  • 100:$0.6530
  • 25:$0.7527
  • 16:$0.8363
SISS10DN-T1-GE3
DISTI # SISS10DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 31.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISS10DN-T1-GE3)
RoHS: Not Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.3756
  • 30000:$0.3860
  • 18000:$0.3970
  • 12000:$0.4138
  • 6000:$0.4265
SISS10DN-T1-GE3
DISTI # 78-SISS10DN-T1-GE3
Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK 1212-8S
RoHS: Compliant
4083
  • 1:$1.0000
  • 10:$0.8430
  • 100:$0.6640
  • 500:$0.5630
  • 1000:$0.4450
  • 3000:$0.4100
  • 6000:$0.3890
  • 9000:$0.3850
SISS10DNT1GE3Vishay IntertechnologiesPower Field-Effect Transistor
RoHS: Compliant
Europe - 3000
    Imagen Parte # Descripción
    SISS10DN-T1-GE3

    Mfr.#: SISS10DN-T1-GE3

    OMO.#: OMO-SISS10DN-T1-GE3

    MOSFET 40V Vds 20V Vgs PowerPAK 1212-8S
    SISS10DN

    Mfr.#: SISS10DN

    OMO.#: OMO-SISS10DN-1190

    Nuevo y original
    SISS10DN-T1-GE3

    Mfr.#: SISS10DN-T1-GE3

    OMO.#: OMO-SISS10DN-T1-GE3-VISHAY

    MOSFET N-CH 40V 60A PPAK 1212-8S
    SISS10DNT1GE3

    Mfr.#: SISS10DNT1GE3

    OMO.#: OMO-SISS10DNT1GE3-1190

    Power Field-Effect Transisto
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de SISS10DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,56 US$
    0,56 US$
    10
    0,53 US$
    5,34 US$
    100
    0,51 US$
    50,61 US$
    500
    0,48 US$
    239,00 US$
    1000
    0,45 US$
    449,90 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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