HMC8411LP2FETR

HMC8411LP2FETR
Mfr. #:
HMC8411LP2FETR
Fabricante:
Analog Devices Inc.
Descripción:
RF Amplifier DC- 8 GHz 15 dB Gain
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HMC8411LP2FETR Ficha de datos
Entrega:
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ECAD Model:
Más información:
HMC8411LP2FETR más información HMC8411LP2FETR Product Details
Atributo del producto
Valor de atributo
Fabricante:
Analog Devices Inc.
Categoria de producto:
Amplificador de RF
RoHS:
Y
Estilo de montaje:
SMD / SMT
Paquete / Caja:
LFCSP-6
Escribe:
Low Noise Amplifier
Tecnología:
GaAs
Frecuencia de operación:
0.01 GHz to 10 GHz
P1dB - Punto de compresión:
17 dBm
Ganar:
14 dB
Voltaje de suministro operativo:
5 V
NF - Figura de ruido:
2 dB
Frecuencia de prueba:
6 GHz to 10 GHz
OIP3 - Intercepción de tercer orden:
33 dBm
Corriente de suministro de funcionamiento:
55 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Serie:
HMC8411
Embalaje:
Carrete
Producto:
Amplificadores operacionales
Marca:
Dispositivos analógicos
Número de canales:
1 Channel
Pérdida de retorno de entrada:
15 dB
Pd - Disipación de energía:
1.098 W
Tipo de producto:
Amplificador de RF
Cantidad de paquete de fábrica:
500
Subcategoría:
Circuitos integrados inalámbricos y RF
Tags
HMC841, HMC84, HMC8, HMC
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
DC - 8 GHZ 15 DB GAIN
***log Devices
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The saturated output power (PSAT) of 19.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers. The HMC8411LP2FE also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications. The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP. Multifunction pin names may be referenced by their relevant function only. Applications Test instrumentation Military communications
RF, Microwave & Millimeter Wave ADI SLP
Parte # Mfg. Descripción Valores Precio
HMC8411LP2FETR
DISTI # V72:2272_23363481
Analog Devices IncDC - 8 GHZ 15 DB GAIN0
    HMC8411LP2FETR
    DISTI # HMC8411LP2FETR-ND
    Analog Devices IncDC - 8 GHZ 15 DB GAIN
    RoHS: Compliant
    Min Qty: 500
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 500:$43.5785
    HMC8411LP2FE
    DISTI # 584-HMC8411LP2FE
    Analog Devices IncRF Amplifier DC- 8 GHz 15 dB Gain
    RoHS: Compliant
    182
    • 1:$54.7500
    • 5:$53.1000
    • 10:$51.4400
    • 25:$49.7800
    • 100:$46.1300
    HMC8411LP2FETR
    DISTI # 584-HMC8411LP2FETR
    Analog Devices IncRF Amplifier DC- 8 GHz 15 dB Gain
    RoHS: Compliant
    0
    • 500:$44.8000
    Imagen Parte # Descripción
    HMC8411LP2FE

    Mfr.#: HMC8411LP2FE

    OMO.#: OMO-HMC8411LP2FE

    RF Amplifier DC- 8 GHz 15 dB Gain
    HMC8411LP2FETR

    Mfr.#: HMC8411LP2FETR

    OMO.#: OMO-HMC8411LP2FETR

    RF Amplifier DC- 8 GHz 15 dB Gain
    HMC8411LP2FE

    Mfr.#: HMC8411LP2FE

    OMO.#: OMO-HMC8411LP2FE-1190

    DC - 8 GHZ 15 DB GAIN
    HMC8411LP2FETR

    Mfr.#: HMC8411LP2FETR

    OMO.#: OMO-HMC8411LP2FETR-1190

    DC - 8 GHZ 15 DB GAIN
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de HMC8411LP2FETR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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