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STU3N62K3

STU3N62K3
Mfr. #:
STU3N62K3
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-Ch, 620V-2.2ohms 2.7A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STU3N62K3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STU3N62K3 más información STU3N62K3 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
620 V
Id - Corriente de drenaje continua:
2.7 A
Rds On - Resistencia de la fuente de drenaje:
2.5 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
13 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
45 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
MDmesh
Embalaje:
Tubo
Altura:
6.2 mm
Longitud:
6.6 mm
Serie:
STU3N62K3
Tipo de transistor:
1 N-Channel
Ancho:
2.4 mm
Marca:
STMicroelectronics
Otoño:
15.6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
6.8 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
22 ns
Tiempo típico de retardo de encendido:
9 ns
Unidad de peso:
0.139332 oz
Tags
STU3N, STU3, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in IPAK package
*** Source Electronics
Trans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 620V 2.7A IPAK
***r Electronics
Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET, N CH, 620V, 2.7A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***icroelectronics
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in IPAK package
***ure Electronics
N-Channel 620 V 2 Ohm Through Hole SuperMESH3 Power Mosfet - IPAK
***ark
Power Mosfet, N Channel, 3.8 A, 620 V, 1.7 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 620V, 3.8A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Source Voltage Vds:620V; On Resistance
***r Electronics
Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 620V, 3.8A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 620V; On Resistance Rds(on): 1.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK package
*** Electronics
MOSFET Transistor, N Channel, 5 A, 600 V, 0.84 ohm, 10 V, 3 V RoHS Compliant: Yes
*** Source Electronics
MOSFET N-CH 600V 5A IPAK / Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ark
MOSFET, N CH, 600V, 5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes
***inecomponents.com
60V P-Channel A-FET / Substitute of IRFU9024
***i-Key
P-CHANNEL POWER MOSFET
***ser
MOSFETs PCh/60V/7.8a/0.28Ohm
***emi
N-Channel Power MOSFET, SuperFET® II, FAST, 600V, 4.5A, 900mΩ, IPAK
***ure Electronics
Single N-Channel 600 V 0.90 Ohm 17 nC 52 W Silicon Through Hole Mosfet - TO-251
***el Electronic
FAIRCHILD SEMICONDUCTOR FCU900N60ZPower MOSFET, N Channel, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V
*** Stop Electro
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH, 600V, 4.5A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ark
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr
***et
Trans MOSFET N-CH 30V 35A 3-Pin(3+Tab) TO-251
***ronik
N-CH 30V 35A 11mOhm TO251-3 RoHSconf
***nell
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0088ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
***et
Transistor MOSFET N-CH 600V 1.8A 3-Pin TO-251 T/R
***ment14 APAC
MOSFET, N, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-251; No. of Pins:3; Current Id Max:1.8A; Package / Case:TO-251; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Zener-Protected SuperMESH3 Power MOSFETs
STMicroelectronics new SuperMESH3™ Power MOSFETs are obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly down, special attention has been taken to ensure that these MOSFETs have a very good dynamic performance coupled with a very large avalanche capability for the most demanding switching applications. SuperMESH3™ Power MOSFETs now come in voltages up to 1200V.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Parte # Mfg. Descripción Valores Precio
STU3N62K3
DISTI # 31976754		STMicroelectronicsTrans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		4873
  • 48:$0.2125
STU3N62K3
DISTI # 497-12695-5-ND		STMicroelectronicsMOSFET N-CH 620V 2.7A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		3000In Stock
  • 5025:$0.4818
  • 2550:$0.5071
  • 525:$0.6883
  • 150:$0.8332
  • 75:$1.0143
  • 10:$1.0690
  • 1:$1.2000
STU3N62K3
DISTI # STU3N62K3		STMicroelectronicsTrans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STU3N62K3)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 30000:$0.4399
  • 18000:$0.4489
  • 12000:$0.4699
  • 6000:$0.4919
  • 3000:$0.5169
STU3N62K3
DISTI # STU3N62K3		STMicroelectronicsTrans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube (Alt: STU3N62K3)
RoHS: Compliant
Min Qty: 75
Container: Tube		Europe - 0
  • 750:€0.1999
  • 450:€0.2159
  • 300:€0.2339
  • 150:€0.2549
  • 75:€0.3119
STU3N62K3
DISTI # 57P2562		STMicroelectronicsMOSFET, N CH, 620V, 2.7A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:2.7A,Drain Source Voltage Vds:620V,On Resistance Rds(on):2.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.75V,MSL:- RoHS Compliant: Yes0
  • 10000:$0.4490
  • 2500:$0.4630
  • 1000:$0.5730
  • 500:$0.6560
  • 100:$0.7420
  • 10:$0.9660
  • 1:$1.1300
STU3N62K3
DISTI # 511-STU3N62K3		STMicroelectronicsMOSFET N-Ch, 620V-2.2ohms 2.7A
RoHS: Compliant		5980
  • 1:$1.1400
  • 10:$0.9660
  • 100:$0.7420
  • 500:$0.6560
  • 1000:$0.5180
  • 3000:$0.4590
  • 9000:$0.4420
STU3N62K3STMicroelectronics 125
    STU3N62K3
    DISTI # STU3N62K3    		STMicroelectronicsTransistor: N-MOSFET,unipolar,620V,1.7A,45W,IPAK152
    • 300:$0.2800
    • 75:$0.3000
    • 25:$0.3400
    • 5:$0.4200
    • 1:$0.6500
    STU3N62K3
    DISTI # 2098356    		STMicroelectronicsMOSFET, N CH, 620V, 2.7A, IPAK
    RoHS: Compliant    		74
    • 24000:$0.6450
    • 9000:$0.6660
    • 3000:$0.6920
    • 1000:$0.7810
    • 500:$0.9890
    • 100:$1.1200
    • 10:$1.4600
    • 1:$1.7200
    STU3N62K3STMicroelectronicsN-channel 620V, 2.2, 2.7A Power MOSFET2050
    • 1:$0.2900
    • 100:$0.2700
    • 500:$0.2500
    • 1000:$0.2300
    STU3N62K3
    DISTI # 2098356    		STMicroelectronicsMOSFET, N CH, 620V, 2.7A, IPAK74
    • 500:£0.4510
    • 250:£0.4810
    • 100:£0.5090
    • 25:£0.6630
    • 5:£0.7380
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    ATL432BIDBZR

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    		 Cartridge Fuses 5A, 250V, 5X20MM AXIAL
    REA101M1HBK-0811P

    Mfr.#: REA101M1HBK-0811P

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    Mfr.#: STFU24N60M2

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    Disponibilidad
    Valores:
    Available
    En orden:
    1988
    Ingrese la cantidad:
    El precio actual de STU3N62K3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,14 US$
    1,14 US$
    10
    0,97 US$
    9,66 US$
    100
    0,74 US$
    74,20 US$
    500
    0,66 US$
    328,00 US$
    1000
    0,52 US$
    518,00 US$
    3000
    0,46 US$
    1 377,00 US$
    9000
    0,44 US$
    3 978,00 US$
    24000
    0,43 US$
    10 272,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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