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BLF175

BLF175
Mfr. #:
BLF175
Fabricante:
NXP Semiconductors
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BLF175 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BLF175 más información BLF175 Product Details
Atributo del producto
Valor de atributo
Tags
BLF175, BLF17, BLF1, BLF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers
VHF BAND Si N-CHANNEL RF POWER MOSFET
***ark
MOSFET, VHF, SOT-123; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:125V; Current, Id Cont:4A; Resistance, Rds On:0.75ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.5V; Case Style:SOT-123; ;RoHS Compliant: Yes
***nell
MOSFET, VHF, SOT-123; Drain Source Voltage Vds:125V; Continuous Drain Current Id:4A; Power Dissipation Pd:68W; Operating Frequency Min:1MHz; Operating Frequency Max:108MHz; RF Transistor Case:SOT-123A; No. of Pins:4Pins; Operating Temperature Max:200°C; Product Range:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Application Code:RFPOWMOS; Base Number:1; Current Idss Max:100µA; Gain Bandwidth ft Typ:32MHz; Junction to Case Thermal Resistance A:2.6°C/W; No. of Transistors:1; On Resistance Rds(on):750mohm; On State Resistance Max:1.5ohm; Pin Format:D(1), S(2&4), G(3); Power Dissipation Max:68W; Threshold Voltage Vgs:4.5V; Transistor Case Style:SOT-123; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:125V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V; Voltage Vgs th Min:2V
Parte # Mfg. Descripción Valores Precio
BLF175,112
DISTI # 568-2400-ND		AmpleonRF FET NCHA 125V 20DB SOT123A
RoHS: Compliant
Min Qty: 40
Container: Tray		Limited Supply - Call
    BLF175,112
    DISTI # 70R2751    		NXP SemiconductorsHF/VHF POWER MOSFET, N CHANNEL, 125V, 4A, SOT123A-4,Drain Source Voltage Vds:125V,Continuous Drain Current Id:4A,Power Dissipation Pd:68W,Operating Frequency Min:-,Operating Frequency Max:-,RF Transistor Case:SOT-123A,MSL:- RoHS Compliant: Yes0
      BLF175
      DISTI # 1349664      		NXP Semiconductors 
      RoHS: Compliant      		0
      • 20:$61.3900
      • 10:$63.0700
      • 5:$64.8500
      • 2:$66.7300
      • 1:$72.0900
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      Mfr.#: BLF884PS112

      OMO.#: OMO-BLF884PS112-1152

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      Mfr.#: BLF7G21L-160P,118

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      Mfr.#: BLF884PS,112

      OMO.#: OMO-BLF884PS-112-AMPLEON

      		 RF MOSFET Transistors UHF PWR LDMOS TRNSTR
      Disponibilidad
      Valores:
      Available
      En orden:
      3500
      Ingrese la cantidad:
      El precio actual de BLF175 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,00 US$
      0,00 US$
      10
      0,00 US$
      0,00 US$
      100
      0,00 US$
      0,00 US$
      500
      0,00 US$
      0,00 US$
      1000
      0,00 US$
      0,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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