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IKP06N60TXKSA1

IKP06N60TXKSA1
Mfr. #:
IKP06N60TXKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors LOW LOSS DuoPack 600V 6A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKP06N60TXKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IKP06N60TXKSA1 DatasheetIKP06N60TXKSA1 Datasheet (P4-P6)IKP06N60TXKSA1 Datasheet (P7-P9)IKP06N60TXKSA1 Datasheet (P10-P12)IKP06N60TXKSA1 Datasheet (P13)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.5 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
12 A
Pd - Disipación de energía:
88 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
TRENCHSTOP IGBT
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
500
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IKP06N60T IKP6N6TXK SP000683056
Tags
IKP06N60T, IKP06, IKP0, IKP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 12A 88000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IKP06N60T: 600V 12A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3
***nsix Microsemi
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, 600V, 6A, TO-220; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:88W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; Current Ic Continuous a Max:6A; No. of Transistors:1; Package / Case:TO-220; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon SCT
The 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IGP06N60T Series 600 V 12 A Through Hole Low Loss IGBT - PG-TO-220-3
***ineon SCT
Infineon's 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***Yang
IKP10N60T: 650V 10A Through Hole Low Loss DuoPack IGBT TrenchStop™ - PG-TO-220-3
***ow.cn
Trans IGBT Chip N-CH 600V 24A 110000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS
***nsix Microsemi
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, N, 600V, 10A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:10A; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***-Wing Technology
STMICROELECTRONICS STGP6NC60HD IGBT Single Transistor, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 Pins
***ical
Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(3+Tab) TO-220AB Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem
***p One Stop
Trans IGBT Chip N-CH 600V 14.7A 35700mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
IKA15N60T Series N-Channel 600 V 14.7 A IGBT in TRENCHSTOP™ - TO-220FP
***ineon SCT
600 V IGBT with anti-parallel diode in TO-220 Full-Pak package, PG-TO220-3, RoHS
*** Stop Electro
Insulated Gate Bipolar Transistor, 14.7A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ment14 APAC
IGBT, SINGLE, 600V, 18.3A, TO-220; DC Collector Current:18.3A; Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:35.7W;
***nell
IGBT, N, 600V, 15A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:15A; Voltage, Vce Sat Max:2.05V; Power Dissipation:35.7W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Transistors, No. of:1
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest Vce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in Vce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V for flexibility of design; High device reliability | Target Applications: UPS; Solar; Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***ical
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 25A 80W TO220
***el Electronic
STMICROELECTRONICS STGP7NC60HD IGBT Single Transistor, 25 A, 2.5 V, 80 W, 600 V, TO-220, 3 Pins
***icroelectronics
N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode
***ure Electronics
STGP7NC60HD Series N-Channel 600 V 25 A Very Fast PowerMESH IGBT - TO-220
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 7A, TO-220; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Ope
Parte # Mfg. Descripción Valores Precio
IKP06N60TXKSA1
DISTI # V99:2348_06383931		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		414
  • 2500:$0.8650
  • 1000:$0.8735
  • 500:$1.0643
  • 100:$1.2205
  • 10:$1.5451
  • 1:$2.0079
IKP06N60TXKSA1
DISTI # V36:1790_06383931		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		0
  • 500000:$0.7611
  • 250000:$0.7631
  • 50000:$0.8990
  • 5000:$1.1180
  • 500:$1.1540
IKP06N60TXKSA1
DISTI # IKP06N60TXKSA1-ND		Infineon Technologies AGIGBT 600V 12A 88W TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$1.1540
IKP06N60TXKSA1
DISTI # 30177240		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		490
  • 14:$0.7412
IKP06N60TXKSA1
DISTI # 26197718		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		414
  • 8:$2.0079
IKP06N60TXK
DISTI # IKP06N60TXKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 600V 12A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IKP06N60TXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$0.7969
  • 3000:$0.8119
  • 2000:$0.8399
  • 1000:$0.8719
  • 500:$0.9039
IKP06N60TXKSA1
DISTI # 726-IKP06N60TXKSA1		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 600V 6A
RoHS: Compliant		998
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9110
  • 2500:$0.8480
  • 5000:$0.8170
  • 10000:$0.7850
IKP06N60T
DISTI # 726-IKP06N60T		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 600V 6A
RoHS: Compliant		360
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9110
  • 2500:$0.8480
  • 5000:$0.8170
  • 10000:$0.7850
IKP06N60TXKSA1
DISTI # 1107169		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 600V 6A TO220, PK190
  • 500:£0.6590
  • 200:£0.7040
  • 100:£0.7500
  • 20:£0.8590
  • 10:£1.0390
IKP06N60TXKSA1
DISTI # 1107169P		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 600V 6A TO220, TU560
  • 500:£0.6590
  • 200:£0.7040
  • 100:£0.7500
  • 20:£0.8590
IKP06N60TXKSA1
DISTI # XSKDRABV0052156		Infineon Technologies AG 
RoHS: Compliant		16500 in Stock0 on Order
  • 16500:$1.0400
  • 500:$1.1100
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Disponibilidad
Valores:
988
En orden:
2971
Ingrese la cantidad:
El precio actual de IKP06N60TXKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,84 US$
1,84 US$
10
1,57 US$
15,70 US$
100
1,25 US$
125,00 US$
500
1,10 US$
550,00 US$
1000
0,91 US$
911,00 US$
2500
0,85 US$
2 120,00 US$
5000
0,82 US$
4 085,00 US$
10000
0,78 US$
7 850,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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