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IXFN64N60P

IXFN64N60P
Mfr. #:
IXFN64N60P
Fabricante:
Littelfuse
Descripción:
MOSFET 600V 64A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN64N60P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN64N60P DatasheetIXFN64N60P Datasheet (P4-P5)
ECAD Model:
Más información:
IXFN64N60P más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
Montaje en chasis
Paquete / Caja:
SOT-227-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
50 A
Rds On - Resistencia de la fuente de drenaje:
96 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
700 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Altura:
9.6 mm
Longitud:
38.2 mm
Serie:
IXFN64N60
Tipo de transistor:
1 N-Channel
Ancho:
25.07 mm
Marca:
IXYS
Transconductancia directa - Mín .:
63 S
Otoño:
24 ns
Tipo de producto:
MOSFET
Hora de levantarse:
23 ns
Cantidad de paquete de fábrica:
10
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
79 ns
Tiempo típico de retardo de encendido:
28 ns
Unidad de peso:
1.058219 oz
Tags
IXFN64, IXFN6, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFN64N60P
DISTI # V99:2348_15877446		IXYS CorporationTrans MOSFET N-CH Si 600V 50A 4-Pin SOT-227B
RoHS: Compliant		6
  • 500:$16.1300
  • 200:$16.2200
  • 100:$17.8500
  • 50:$18.5799
  • 25:$19.6000
  • 10:$21.5600
  • 5:$22.3299
  • 1:$23.7300
IXFN64N60P
DISTI # V36:1790_15877446		IXYS CorporationTrans MOSFET N-CH Si 600V 50A 4-Pin SOT-227B
RoHS: Compliant		0
  • 10000:$13.8700
  • 5000:$13.8800
  • 1000:$15.9900
  • 100:$21.0900
  • 10:$22.0300
IXFN64N60P
DISTI # IXFN64N60P-ND		IXYS CorporationMOSFET N-CH 600V 50A SOT-227
RoHS: Compliant
Min Qty: 10
Container: Tube		Temporarily Out of Stock
  • 10:$22.0340
IXFN64N60P
DISTI # 27135510		IXYS CorporationTrans MOSFET N-CH Si 600V 50A 4-Pin SOT-227B
RoHS: Compliant		6
  • 1:$23.7300
IXFN64N60P
DISTI # 58M7626		IXYS CorporationMOSFET, N, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.096ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:700W RoHS Compliant: Yes10
  • 250:$17.4400
  • 100:$19.0100
  • 50:$19.5800
  • 25:$20.4500
  • 10:$22.2500
  • 5:$22.8600
  • 1:$24.0600
IXFN64N60P
DISTI # 747-IXFN64N60P		IXYS CorporationMOSFET 600V 64A
RoHS: Compliant		297
  • 1:$23.8200
  • 5:$22.6300
  • 10:$22.0300
  • 25:$20.2500
  • 50:$19.3900
  • 100:$18.8200
  • 200:$17.2700
IXFN64N60P
DISTI # IXFN64N60P		IXYS CorporationN-Ch 600V 50A 700W 0,096R SOT227B
RoHS: Compliant		9
  • 1:€19.1500
  • 5:€16.1500
  • 10:€15.1500
  • 25:€14.6000
IXFN64N60P
DISTI # 1427328		IXYS CorporationMOSFET, N, SOT-227B5
  • 100:£13.1800
  • 50:£14.7900
  • 10:£15.4500
  • 5:£17.2600
  • 1:£18.1700
IXFN64N60P
DISTI # 1427328		IXYS CorporationMOSFET, N, SOT-227B
RoHS: Compliant		10
  • 100:$28.3600
  • 50:$29.2200
  • 25:$30.5200
  • 10:$33.2000
  • 5:$34.1000
  • 1:$35.9000
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Disponibilidad
Valores:
297
En orden:
2280
Ingrese la cantidad:
El precio actual de IXFN64N60P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
23,82 US$
23,82 US$
5
22,63 US$
113,15 US$
10
22,03 US$
220,30 US$
25
20,25 US$
506,25 US$
50
19,39 US$
969,50 US$
100
18,82 US$
1 882,00 US$
200
17,27 US$
3 454,00 US$
500
16,44 US$
8 220,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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