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FS100R12PT4

FS100R12PT4
Mfr. #:
FS100R12PT4
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules 3 PHASE POWER BRIDGE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FS100R12PT4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
RoHS:
Y
Producto:
Módulos de silicio IGBT
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.15 V
Corriente continua del colector a 25 C:
135 A
Corriente de fuga puerta-emisor:
100 nA
Pd - Disipación de energía:
500 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Bandeja
Marca:
Infineon Technologies
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
6
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
FS100R12PT4BOSA1 SP000485594
Unidad de peso:
13.580475 oz
Tags
FS100R12P, FS100R12, FS100R1, FS100R, FS100, FS10, FS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2KV 135A 19-Pin
***ment14 APAC
IGBT, POW, QUAD W NTC, 1200V, 100A; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:20; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:500W
***ineon
EconoPACK 4 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
Parte # Mfg. Descripción Valores Precio
FS100R12PT4BOSA1
DISTI # FS100R12PT4BOSA1-ND		Infineon Technologies AGIGBT MODULE VCES 600V 100A
RoHS: Not compliant
Min Qty: 6
Container: Bulk		Temporarily Out of Stock
  • 6:$142.1867
FS100R12PT4
DISTI # SP000485594		Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 135A 19-Pin (Alt: SP000485594)
RoHS: Compliant
Min Qty: 1		Europe - 3
  • 1:€170.5900
  • 10:€137.8900
  • 25:€125.2900
  • 50:€121.0900
  • 100:€117.0900
  • 500:€113.6900
  • 1000:€111.0900
FS100R12PT4BOSA1
DISTI # FS100R12PT4BOSA1		Infineon Technologies AGMEDIUM POWER ECONO - Trays (Alt: FS100R12PT4BOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray		Americas - 18
  • 6:$128.9900
  • 12:$125.4900
  • 24:$122.2900
  • 36:$119.1900
  • 60:$116.1900
FS100R12PT4
DISTI # SP000485594		Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 135A 19-Pin (Alt: SP000485594)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€145.4900
  • 10:€133.3900
  • 25:€127.9900
  • 50:€123.0900
  • 100:€118.5900
  • 500:€114.2900
  • 1000:€106.6900
FS100R12PT4
DISTI # 84R7213		Infineon Technologies AGIGBT Module,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:20Pins,Product Range:- RoHS Compliant: Yes0
    FS100R12PT4Infineon Technologies AGInsulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		1611
    • 1000:$113.7000
    • 500:$119.6800
    • 100:$124.6000
    • 25:$129.9400
    • 1:$139.9400
    FS100R12PT4BOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		1
    • 1000:$113.7000
    • 500:$119.6800
    • 100:$124.6000
    • 25:$129.9400
    • 1:$139.9400
    FS100R12PT4
    DISTI # 726-FS100R12PT4    		Infineon Technologies AGIGBT Modules 3 PHASE POWER BRIDGE
    RoHS: Compliant    		4
    • 1:$144.1100
    • 5:$141.2800
    • 10:$134.6900
    • 25:$131.8700
    Imagen Parte # Descripción
    R25-1001502

    Mfr.#: R25-1001502

    OMO.#: OMO-R25-1001502-HARWIN

    		 Standoffs & Spacers M2.5 x 15mm HEX BRASS 5mm A/F
    HKL

    Mfr.#: HKL

    OMO.#: OMO-HKL-731

    		 Fuse Holder Panel Mount Neon Indicating 15A
    Disponibilidad
    Valores:
    Available
    En orden:
    1987
    Ingrese la cantidad:
    El precio actual de FS100R12PT4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    144,11 US$
    144,11 US$
    5
    141,28 US$
    706,40 US$
    10
    134,69 US$
    1 346,90 US$
    25
    131,87 US$
    3 296,75 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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