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IRF7468TRPBF

IRF7468TRPBF
Mfr. #:
IRF7468TRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 40V 9A 15.5mOhm 23nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF7468TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7468TRPBF DatasheetIRF7468TRPBF Datasheet (P4-P6)IRF7468TRPBF Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
9 A
Rds On - Resistencia de la fuente de drenaje:
17 mOhms
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
23 nC
Pd - Disipación de energía:
2.5 W
Configuración:
Único
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Tipo de transistor:
1 N-Channel
Ancho:
3.9 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
4000
Subcategoría:
MOSFET
Parte # Alias:
SP001570352
Unidad de peso:
0.019048 oz
Tags
IRF7468T, IRF7468, IRF746, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 11.7 Milliohms;ID 9.4A;SO-8;PD 2.5W;VGS +/-1
***ure Electronics
Single N-Channel 40 V 15.5 mOhm 34 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 40V 9.4A 8-Pin SOIC Tube
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOIC-8 Polarity: N Variants: Enhancement mode Power dissipation: 2.5 W
*** Stop Electro
Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissip
***ical
Trans MOSFET N-CH 30V 8A Automotive 8-Pin SO T/R
***S
French Electronic Distributor since 1988
***et Europe
Trans MOSFET N-CH 30V 10.4A 8-Pin SO T/R
***i-Key
MOSFET N-CH 30V 10.4A 8SO
***ment14 APAC
MOSFET,+SCH,N CH,30V,11A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.55W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.4A; Power Dissipation Pd:1.55W; Voltage Vgs Max:12V
***ical
Trans MOSFET N-CH 30V 11.2A Automotive 8-Pin SO T/R
***(Formerly Allied Electronics)
IRF8707TRPBF N-channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC
*** Electronics
In a Pack of 10, IRF8707PBF N-Channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC Infineon
***ure Electronics
Single N-Channel 30 V 17.5 mOhm 9.3 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH Si 30V 11A 8-Pin SOIC T/R / MOSFET N-CH 30V 11A 8-SOIC
***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ark
Mosfet Transistor, N Channel, 11 A, 30 V, 13.8 Mohm, 10 V, 1.8 V
***ure Electronics
Single N-Channel 30 V 18.2 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0138ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 13.8 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 6.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 6.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***ark
Mosfet Transistor, N Channel, 10.8 A, 30 V, 0.011 Ohm, 4.5 V, 3 V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
***eco
Transistor MOSFET N Channel 30 Volt 10.8.6 Amp 8 Pin SOIC
***ure Electronics
Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissi
***(Formerly Allied Electronics)
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 9 Milliohms; ID 10A; SO-8; PD 2.5W; VGS +/-12V
***ure Electronics
Single N-Channel 40 V 13 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8
***ment14 APAC
N CHANNEL MOSFET, 40V, 10A, SOIC; TRANSI; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;
*** Source Electronics
Trans MOSFET N-CH 40V 10A 8-Pin SOIC T/R / MOSFET N-CH 40V 10A 8-SOIC
***roFlash
Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET N, LOGIC SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipatio
***Yang
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
N-Channel Power Trench® MOSFET, Logic Level, 30V, 11A, 12.5mΩ
***ure Electronics
N-Channel 30 V 12.5 mO Surface Mount PowerTrench Mosfet - SOIC-8
***et Europe
Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
***-Wing Technology
ON SEMICONDUCTOR - FDS6690A - Power MOSFET, N Channel, 30 V, 11 A, 0.0125 ohm, SOIC, Surface Mount
***nell
MOSFET, N SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation P
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ure Electronics
N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***ure Electronics
N-Channel 30 V 19 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 10A 8-Pin SOIC N T/R - Tape and Reel
***nell
MOSFET, N CH, 30V, 0.01OHM, 10A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.
***ark
N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
***(Formerly Allied Electronics)
MOSFET, 30V, 11A, 11.9 MOHM, 6.2 NC QG, SO-8, HALOGEN-FREE
***et
Trans MOSFET N-CH 30V 11A 8-Pin SOIC T/R
***nell
MOSFET, N-CH, 30V, 11A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0093ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow
Parte # Mfg. Descripción Valores Precio
IRF7468TRPBF
DISTI # 30701994		Infineon Technologies AGTrans MOSFET N-CH 40V 9.4A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.4598
IRF7468TRPBF
DISTI # IRF7468PBFCT-ND		Infineon Technologies AGMOSFET N-CH 40V 9.4A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1331In Stock
  • 1000:$0.5418
  • 500:$0.6863
  • 100:$0.8849
  • 10:$1.1200
  • 1:$1.2600
IRF7468TRPBF
DISTI # IRF7468PBFDKR-ND		Infineon Technologies AGMOSFET N-CH 40V 9.4A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1331In Stock
  • 1000:$0.5418
  • 500:$0.6863
  • 100:$0.8849
  • 10:$1.1200
  • 1:$1.2600
IRF7468TRPBF
DISTI # IRF7468PBFTR-ND		Infineon Technologies AGMOSFET N-CH 40V 9.4A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.4909
IRF7468TRPBF
DISTI # C1S322000485060		Infineon Technologies AGTrans MOSFET N-CH 40V 9.4A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.4140
IRF7468TRPBF
DISTI # IRF7468TRPBF		Infineon Technologies AGTrans MOSFET N-CH 40V 9.4A 8-Pin SOIC T/R (Alt: IRF7468TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.3000
  • 8000:$0.2917
  • 12000:$0.2838
  • 20000:$0.2763
  • 40000:$0.2727
  • 100000:$0.2692
  • 200000:$0.2658
IRF7468TRPBF-EL
DISTI # IRF7468TRPBF		Infineon Technologies AGTrans MOSFET N-CH 40V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7468TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.3669
  • 8000:$0.3539
  • 16000:$0.3409
  • 24000:$0.3289
  • 40000:$0.3239
IRF7468TRPBF
DISTI # 13AC9200		Infineon Technologies AGMOSFET, N-CH, 40V, 9.4A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:9.4A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0117ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation RoHS Compliant: Yes3799
  • 1:$1.0500
  • 10:$0.8930
  • 25:$0.8240
  • 50:$0.7550
  • 100:$0.6860
  • 250:$0.6460
  • 500:$0.6060
  • 1000:$0.4790
IRF7468TRPBF
DISTI # 70017714		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 40V,RDS(ON) 11.7 Milliohms,ID 9.4A,SO-8,PD 2.5W,VGS +/-1
RoHS: Compliant		0
  • 4000:$1.1300
  • 8000:$1.1070
  • 20000:$1.0740
  • 40000:$1.0280
  • 100000:$0.9610
IRF7468TRPBF
DISTI # 942-IRF7468TRPBF		Infineon Technologies AGMOSFET MOSFT 40V 9A 15.5mOhm 23nC
RoHS: Compliant		2837
  • 1:$1.0500
  • 10:$0.8930
  • 100:$0.6860
  • 500:$0.6060
  • 1000:$0.4790
IRF7468TRPBFInternational Rectifier 
RoHS: Not Compliant		3157
  • 1000:$0.4200
  • 500:$0.4400
  • 100:$0.4600
  • 25:$0.4800
  • 1:$0.5200
IRF7468TRPBFInternational Rectifier9.4 A, 40 V, 0.0155 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA3933
  • 2561:$0.2750
  • 572:$0.3125
  • 1:$1.0000
IRF7468TRPBF
DISTI # 2725909		Infineon Technologies AGMOSFET, N-CH, 40V, 9.4A, SOIC
RoHS: Compliant		3799
  • 1:$2.0100
  • 10:$1.7900
  • 100:$1.4200
  • 500:$1.1000
  • 1000:$0.8640
IRF7468TRPBF
DISTI # 2725909		Infineon Technologies AGMOSFET, N-CH, 40V, 9.4A, SOIC
RoHS: Compliant		3889
  • 5:£0.7860
  • 25:£0.7050
  • 100:£0.5410
  • 250:£0.5100
  • 500:£0.4780
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Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de IRF7468TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,04 US$
1,04 US$
10
0,89 US$
8,93 US$
100
0,69 US$
68,60 US$
500
0,61 US$
303,00 US$
1000
0,48 US$
479,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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