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SIHP21N65EF-GE3

SIHP21N65EF-GE3
Mfr. #:
SIHP21N65EF-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHP21N65EF-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHP21N65EF-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIHP21, SIHP2, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650V 21A 3-Pin TO-220AB
***ment14 APAC
MOSFET, N CH, 650V, 21A, TO-220AB-3
***i-Key
MOSFET N-CH 650V 21A TO-220AB
***ark
Mosfet, N Ch, 650V, 21A, To-220Ab-3
***ronik
N-CH 700V 21A 180mOhm TO-220AB
***
N-CH 650V TO-220AB
***nell
MOSFET, CANALE N, 650V, 21A, TO-220AB-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:21A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.15ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:-; Dissipazione di Potenza Pd:208W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Temperatura di Esercizio Min:-55°C
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Parte # Mfg. Descripción Valores Precio
SIHP21N65EF-GE3
DISTI # SIHP21N65EF-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 21A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		174In Stock
  • 100:$3.7749
  • 10:$4.6040
  • 1:$5.1600
SIHP21N65EF-GE3
DISTI # SIHP21N65EF-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 21A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP21N65EF-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.3900
  • 2000:$2.2900
  • 4000:$2.1900
  • 6000:$2.1900
  • 10000:$2.0900
SIHP21N65EF-GE3
DISTI # 78-SIHP21N65EF-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
RoHS: Compliant		1028
  • 1:$4.6900
  • 10:$3.8900
  • 100:$3.2000
  • 250:$3.1000
  • 500:$2.7800
  • 1000:$2.3500
SIHP21N65EF-GE3
DISTI # TMOS1217		Vishay IntertechnologiesN-CH 700V 21A 180mOhm TO-220AB
RoHS: Compliant		Stock DE - 20Stock US - 0
  • 1000:$2.7800
SIHP21N65EF-GE3
DISTI # 2400383		Vishay IntertechnologiesMOSFET, N CH, 650V, 21A, TO-220AB-3
RoHS: Compliant		448
  • 1:£3.9600
  • 10:£2.9500
  • 100:£2.4200
  • 250:£2.3500
  • 500:£2.1000
SIHP21N65EF-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220AB
RoHS: Compliant		Americas -
    Imagen Parte # Descripción
    SIHP21N60EF-GE3

    Mfr.#: SIHP21N60EF-GE3

    OMO.#: OMO-SIHP21N60EF-GE3

    		 MOSFET 600V Vds 30V Vgs TO-220AB
    SIHP21N80AE-GE3

    Mfr.#: SIHP21N80AE-GE3

    OMO.#: OMO-SIHP21N80AE-GE3

    		 MOSFET 850V Vds; 30V Vgs TO-220AB
    SIHP21N65EF-GE3

    Mfr.#: SIHP21N65EF-GE3

    OMO.#: OMO-SIHP21N65EF-GE3

    		 MOSFET 650V Vds 30V Vgs TO-220AB
    SIHP21N65EF-GE3

    Mfr.#: SIHP21N65EF-GE3

    OMO.#: OMO-SIHP21N65EF-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS
    SIHP21N60EF-GE3

    Mfr.#: SIHP21N60EF-GE3

    OMO.#: OMO-SIHP21N60EF-GE3-VISHAY

    		 MOSFET N-CH 600V 21A TO-220AB
    SIHP21N80AE-GE3

    Mfr.#: SIHP21N80AE-GE3

    OMO.#: OMO-SIHP21N80AE-GE3-VISHAY

    		 E Series Power MOSFET TO-220AB, 235 m @ 10V
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de SIHP21N65EF-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,52 US$
    3,52 US$
    10
    3,35 US$
    33,49 US$
    100
    3,17 US$
    317,25 US$
    500
    3,00 US$
    1 498,15 US$
    1000
    2,82 US$
    2 820,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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