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IXFR15N100Q3

IXFR15N100Q3
Mfr. #:
IXFR15N100Q3
Fabricante:
Littelfuse
Descripción:
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFR15N100Q3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR15N100Q3 DatasheetIXFR15N100Q3 Datasheet (P4-P5)
ECAD Model:
Más información:
IXFR15N100Q3 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1 kV
Id - Corriente de drenaje continua:
10 A
Rds On - Resistencia de la fuente de drenaje:
1.2 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
64 nC
Pd - Disipación de energía:
400 W
Configuración:
Único
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
IXFR15N100
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Tipo de producto:
MOSFET
Hora de levantarse:
250 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Unidad de peso:
0.056438 oz
Tags
IXFR15N1, IXFR15N, IXFR15, IXFR1, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 1 kV 10 A 64 nC Through Hole Q3-Class HiPerFET Mosfet - ISOPLUS-247
***trelec
MOSFET, Single - N-Channel, 1kV, 10A, 40W, ISOPLUS247
*** Electronics
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A
***i-Key
MOSFET N-CH 1000V 10A ISOPLUS247
*** Services
CoC and 2-years warranty / RFQ for pricing
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
***ure Electronics
N-Channel 1200 V 520 mO 22 nC Silicon Carbide power Mosfet - HiP247
***ical
Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
***nell
MOSFET, N-CH, 1.2KV, 12A, 150W, HIP247; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 3.
***r Electronics
Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
***r Electronics
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-247 package
***ical
Trans MOSFET N-CH 1.05KV 6A 3-Pin(3+Tab) TO-247 Tube
***icroelectronics SCT
Power MOSFETs, 1050V, 6A, TO-247, Tube
***icroelectronics
N-channel 800 V, 0.19 Ohm typ., 19.5 A SuperMESH(TM) 5 Power MOSFET in TO-247 package
*** Source Electronics
Trans MOSFET N-CH 800V 19.5A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 800V 19.5A TO247
***ark
MOSFET, N-CH, 800V, 19.5A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:19.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 19.5A I(D), 800V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 58 A, 60 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 58A I(D), 800V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
Aluminum Electrolytic Capacitors 680μF Radial, Can - SMD ±20% Tape & Reel (TR) FT 0.413 10.50mm Surface Mount Automotive, High Temperature Reflow CAP ALUM 680UF 20% 35V SMD
***nell
MOSFET, N CHANNEL, 800V, 58A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology istailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ure Electronics
SCT3080KL Series 1200 V 31 A 104 mOhm N-Channel SiC Power Mosfet - TO-247N
***ical
Trans MOSFET N-CH SiC 1.2KV 31A 3-Pin(3+Tab) TO-247N Tube
***ment14 APAC
MOSFET, N-CH, 31A, 1.2KV, TO-247N; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Source Voltage Vds:1.2kV; On Resistance
***roFlash
Power Field-Effect Transistor, 31A I(D), 1200V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET, N-CH, 31A, 1.2KV, TO-247N; Transistor Polarity: N Channel; Continuous Drain Current Id: 31A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 18V; Threshold Voltage Vgs: 5.6V; Power Dissipation Pd: 165W; Transistor Case Style: TO-247N; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFR15N100Q3
DISTI # IXFR15N100Q3-ND		IXYS CorporationMOSFET N-CH 1000V 10A ISOPLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		56In Stock
  • 120:$13.1648
  • 30:$14.3263
  • 1:$17.0400
IXFR15N100Q3
DISTI # 747-IXFR15N100Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/10A
RoHS: Compliant		26
  • 1:$17.8100
  • 10:$16.1900
  • 25:$14.9700
  • 50:$13.7800
  • 100:$13.4400
  • 250:$12.3200
  • 500:$11.1800
IXFR15N100Q3
DISTI # 8011430P		IXYS CorporationMOSFET 1000V 10A Q3 HIPERFET ISOPLUS247, TU4
  • 5:£12.7500
  • 10:£12.1800
  • 25:£11.7600
Imagen Parte # Descripción
LM134H/NOPB

Mfr.#: LM134H/NOPB

OMO.#: OMO-LM134H-NOPB

 Current & Power Monitors & Regulators 3-Terminal Adjustable Current Source
6383-0

Mfr.#: 6383-0

OMO.#: OMO-6383-0-POMONA-ELECTRONICS

 Conn Banana Plug PL 1 POS ST Cable Mount 1 Port
5167-0

Mfr.#: 5167-0

OMO.#: OMO-5167-0-POMONA-ELECTRONICS

 Conn Banana Jack F 1 POS Crimp/Solder ST Cable Mount 1 Port
LM134H/NOPB

Mfr.#: LM134H/NOPB

OMO.#: OMO-LM134H-NOPB-TEXAS-INSTRUMENTS

 Current & Power Monitors & Regulators 3-Terminal Adjustable Current Source 3-TO -55 to 125
Disponibilidad
Valores:
26
En orden:
2009
Ingrese la cantidad:
El precio actual de IXFR15N100Q3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
17,81 US$
17,81 US$
10
16,19 US$
161,90 US$
25
14,97 US$
374,25 US$
50
13,78 US$
689,00 US$
100
13,44 US$
1 344,00 US$
250
12,32 US$
3 080,00 US$
500
11,18 US$
5 590,00 US$
1000
10,21 US$
10 210,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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