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FQH8N100C

FQH8N100C
Mfr. #:
FQH8N100C
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 1000V N-Channel
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQH8N100C Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1 kV
Id - Corriente de drenaje continua:
8 A
Rds On - Resistencia de la fuente de drenaje:
1.45 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
225 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
QFET
Embalaje:
Tubo
Altura:
20.82 mm
Longitud:
15.87 mm
Serie:
FQH8N100C
Tipo de transistor:
1 N-Channel
Ancho:
4.82 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
80 ns
Tipo de producto:
MOSFET
Hora de levantarse:
95 ns
Cantidad de paquete de fábrica:
450
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
122 ns
Tiempo típico de retardo de encendido:
50 ns
Unidad de peso:
0.225401 oz
Tags
FQH8, FQH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***m
    A***m
    MV

    good

    2019-03-10
    S***v
    S***v
    BG

    NOTHING. The seller did not send me anything. Do not buy

    2019-07-11
***emi
N-Channel Power MOSFET, QFET®, 1000 V, 8.0 A, 1.45 Ω, TO-247
***r Electronics
Power Field-Effect Transistor, 8A I(D), 1000V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***nell
MOSFET, N-CH, 1KV, 8A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Di
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
FQH8N100C
DISTI # V99:2348_06359880		ON Semiconductor1000V, 8A, CFET367
  • 5000:$1.4330
  • 2500:$1.4820
  • 1000:$1.5430
  • 500:$1.7490
  • 250:$1.9330
  • 100:$2.0320
  • 10:$2.3030
  • 1:$2.6370
FQH8N100C
DISTI # V36:1790_06359880		ON Semiconductor1000V, 8A, CFET28
  • 5000:$1.4330
  • 2500:$1.4820
  • 1000:$1.5430
  • 500:$1.7490
  • 250:$1.9330
  • 100:$2.0320
  • 10:$2.3030
  • 1:$2.6370
FQH8N100C
DISTI # FQH8N100C-ND		ON SemiconductorMOSFET N-CH 1000V 8A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		416In Stock
  • 1350:$1.9663
  • 900:$2.0966
  • 450:$2.5526
  • 10:$3.3990
  • 1:$3.7900
FQH8N100C
DISTI # 31014348		ON Semiconductor1000V, 8A, CFET450
  • 450:$1.9200
FQH8N100C
DISTI # 31268064		ON Semiconductor1000V, 8A, CFET367
  • 5:$2.6370
FQH8N100C
DISTI # 31040247		ON Semiconductor1000V, 8A, CFET28
  • 100:$2.0320
  • 10:$2.3030
  • 5:$2.6370
FQH8N100C
DISTI # 30617742		ON Semiconductor1000V, 8A, CFET18
  • 10:$2.4863
  • 7:$3.6720
FQH8N100C
DISTI # FQH8N100C		ON SemiconductorTrans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FQH8N100C)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.3900
  • 900:$1.3900
  • 1800:$1.2900
  • 2700:$1.2900
  • 4500:$1.2900
FQH8N100C
DISTI # 46AC0861		ON SemiconductorMOSFET, N-CH, 1KV, 8A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:1kV,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation RoHS Compliant: Yes197
  • 1:$3.2700
  • 10:$2.8500
  • 25:$2.5100
  • 50:$2.3600
  • 100:$2.0600
  • 250:$1.7600
  • 500:$1.6900
FQH8N100CON Semiconductor 
RoHS: Not Compliant		600
  • 1000:$1.7600
  • 500:$1.8600
  • 100:$1.9300
  • 25:$2.0200
  • 1:$2.1700
FQH8N100C
DISTI # 512-FQH8N100C		ON SemiconductorMOSFET 1000V N-Channel
RoHS: Compliant		550
  • 1:$3.1400
  • 10:$2.6700
  • 100:$2.3100
  • 250:$2.2000
  • 500:$1.9700
  • 1000:$1.6600
  • 2500:$1.5800
  • 5000:$1.5200
FQH8N100C
DISTI # XSKDRABV0030457		ON Semiconductor 
RoHS: Compliant		648
  • 450:$2.2900
  • 648:$2.1300
FQH8N100C
DISTI # C1S541901511456		ON SemiconductorMOSFETs18
  • 10:$1.9500
  • 1:$2.8800
FQH8N100C
DISTI # C1S226600596019		ON SemiconductorTrans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		367
  • 250:$1.9330
  • 100:$2.0320
  • 10:$2.3030
  • 1:$2.6370
FQH8N100C
DISTI # 2825207		ON SemiconductorMOSFET, N-CH, 1KV, 8A, TO-247-3
RoHS: Compliant		200
  • 1:£3.1000
  • 10:£2.4700
  • 100:£2.1500
  • 250:£1.8200
  • 500:£1.4800
FQH8N100C
DISTI # 2825207		ON SemiconductorMOSFET, N-CH, 1KV, 8A, TO-247-3
RoHS: Compliant		197
  • 1:$4.9000
  • 10:$4.2700
  • 100:$3.7000
  • 250:$3.3300
  • 500:$2.9200
  • 1000:$2.6400
Imagen Parte # Descripción
MJE340STU

Mfr.#: MJE340STU

OMO.#: OMO-MJE340STU

 Bipolar Transistors - BJT NPN Epitaxial Sil
BZG04-150-M3-08

Mfr.#: BZG04-150-M3-08

OMO.#: OMO-BZG04-150-M3-08

 Zener Diodes Uni-direc 300W Pppm SMA (DO-214AC)
IAUT300N10S5N015ATMA1

Mfr.#: IAUT300N10S5N015ATMA1

OMO.#: OMO-IAUT300N10S5N015ATMA1

 MOSFET MOSFET_(75V,120V(
IRFBG20PBF

Mfr.#: IRFBG20PBF

OMO.#: OMO-IRFBG20PBF

 MOSFET RECOMMENDED ALT 844-IRFBF20PBF
CRCW0805470RFKEA

Mfr.#: CRCW0805470RFKEA

OMO.#: OMO-CRCW0805470RFKEA

 Thick Film Resistors - SMD 1/8watt 470ohms 1% 100ppm
CRCW0805470RFKEA

Mfr.#: CRCW0805470RFKEA

OMO.#: OMO-CRCW0805470RFKEA-VISHAY-DALE

 Thick Film Resistors - SMD 1/8watt 470ohms 1% 100ppm
IRFBG20PBF

Mfr.#: IRFBG20PBF

OMO.#: OMO-IRFBG20PBF-VISHAY

 MOSFET N-CH 1000V 1.4A TO-220AB
IAUT300N10S5N015ATMA1

Mfr.#: IAUT300N10S5N015ATMA1

OMO.#: OMO-IAUT300N10S5N015ATMA1-INFINEON-TECHNOLOGIES

 MOSFET_(75V,120V(
BZG04-150-M3-08

Mfr.#: BZG04-150-M3-08

OMO.#: OMO-BZG04-150-M3-08-VISHAY

 Zener Diodes with Surge Current
SQMR547KJ

Mfr.#: SQMR547KJ

OMO.#: OMO-SQMR547KJ-TE-CONNECTIVITY-AMP

 Metal Film Resistors - Through Hole SQM5 47K 5% (METAL FILM)
Disponibilidad
Valores:
900
En orden:
2883
Ingrese la cantidad:
El precio actual de FQH8N100C es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,14 US$
3,14 US$
10
2,67 US$
26,70 US$
100
2,31 US$
231,00 US$
250
2,20 US$
550,00 US$
500
1,97 US$
985,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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