FDD6612A

Mfr. #:: FDD6612A
Fabricante:: ON Semiconductor
Descripción:: MOSFET N-CH 30V 9.5A DPAK
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDD6612A Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante: Fairchild Semiconductor

categoria de producto: FET - Single

Serie: PowerTrenchR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: FDD6612A_NL

Unidad de peso: 0.009184 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: TO-252-3, DPak (2 Leads + Tab), SC-63

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 175°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: TO-252-3

Configuración: Único

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 1.3W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 30V

Entrada-Capacitancia-Ciss-Vds: 660pF @ 15V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 9.5A (Ta), 30A (Tc)

Rds-On-Max-Id-Vgs: 20 mOhm @ 9.5A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Puerta-Carga-Qg-Vgs: 9.4nC @ 5V

Disipación de potencia Pd: 2.8 W

Temperatura máxima de funcionamiento: + 175 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 4 ns

Hora de levantarse: 5 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 30 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Resistencia a la fuente de desagüe de Rds: 15 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 24 ns

Tiempo de retardo de encendido típico: 9 ns

Transconductancia directa-Mín.: 28 S

Modo de canal: Mejora

Tags: FDD6612A, FDD661, FDD66, FDD6, FDD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD6612A Descripción

***emi: N-Channel PowerTrench® MOSFET, 30V, 30A, 20mΩ

***ure Electronics: N-Channel 30 V 20 mOhm Surface Mount PowerTrench Mosfet TO-252-3

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:30A; On Resistance, Rds(on):20mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252 ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDD6612A DISTI # 31022028	ON Semiconductor	DPAK SINGLE NCH	2500	2500:$0.3920
FDD6612A DISTI # FDD6612ACT-ND	ON Semiconductor	MOSFET N-CH 30V 9.5A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2796In Stock	1000:$0.4310 500:$0.5459 100:$0.7040 10:$0.8910 1:$1.0100
FDD6612A DISTI # FDD6612ADKR-ND	ON Semiconductor	MOSFET N-CH 30V 9.5A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2796In Stock	1000:$0.4310 500:$0.5459 100:$0.7040 10:$0.8910 1:$1.0100
FDD6612A DISTI # FDD6612ATR-ND	ON Semiconductor	MOSFET N-CH 30V 9.5A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.3905
FDD6612A DISTI # C1S541901389334	ON Semiconductor	Trans MOSFET N-CH 30V 9.5A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.5020
FDD6612A DISTI # FDD6612A	ON Semiconductor	Trans MOSFET N-CH 30V 9.5A 3-Pin(2+Tab) DPAK T/R (Alt: FDD6612A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 2500	2500:€0.4259 5000:€0.3479 10000:€0.3189 15000:€0.2939 25000:€0.2729
FDD6612A DISTI # FDD6612A	ON Semiconductor	Trans MOSFET N-CH 30V 9.5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD6612A) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3019 5000:$0.2999 10000:$0.2959 15000:$0.2929 25000:$0.2849
FDD6612A DISTI # 34C0123	ON Semiconductor	Trans MOSFET N-CH 30V 9.5A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 34C0123) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.8660 10:$0.7360 25:$0.6810 50:$0.6270 100:$0.5720 250:$0.5400 500:$0.5080
FDD6612A DISTI # 34C0123	ON Semiconductor	N CHANNEL MOSFET, 30V, 30A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Product Range:-RoHS Compliant: Yes	759	1:$0.8660 10:$0.7360 25:$0.6810 50:$0.6270 100:$0.5720 250:$0.5400 500:$0.5080 1000:$0.4070
FDD6612A	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	285375	1000:$0.4900 500:$0.5100 100:$0.5300 25:$0.5600 1:$0.6000
FDD6612A	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-252AA	2223	596:$0.3000 126:$0.3360 1:$0.9600
FDD6612A	ON Semiconductor	30V N-CHANNEL POWER TRENCH MOSFET DPAK-3 RoHS: Compliant	Europe - 2500
FDD6612A	Fairchild Semiconductor Corporation	INSTOCK	1367
FDD6612A.. DISTI # 4900017	ON Semiconductor	N CHANNEL MOSFET, 30V, 30A, TO-252 RoHS: Compliant	759	1:$1.3400 10:$1.1300 100:$0.8650 500:$0.7630 1000:$0.6030 2500:$0.5350
FDD6612A.. DISTI # 4900017	ON Semiconductor	N CHANNEL MOSFET, 30V, 30A, TO-252 RoHS: Compliant	759	1:£0.7620 10:£0.6470 25:£0.5990 50:£0.5510 100:£0.5030

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: FDD6030BL OMO.#: OMO-FDD6030BL-1190	MOSFET 30V N-Ch PowerTrench
	Mfr.#: FDD6030BLFSC OMO.#: OMO-FDD6030BLFSC-1190	Nuevo y original
	Mfr.#: FDD6035 OMO.#: OMO-FDD6035-1190	Nuevo y original
	Mfr.#: FDD6035ALFSC OMO.#: OMO-FDD6035ALFSC-1190	Nuevo y original
	Mfr.#: FDD6606-NL OMO.#: OMO-FDD6606-NL-1190	Nuevo y original
	Mfr.#: FDD6644F054 OMO.#: OMO-FDD6644F054-1190	Nuevo y original
	Mfr.#: FDD6685_Q OMO.#: OMO-FDD6685-Q-1190	Nuevo y original
	Mfr.#: FDD6688S-NL OMO.#: OMO-FDD6688S-NL-1190	Nuevo y original
	Mfr.#: FDD6692A OMO.#: OMO-FDD6692A-1190	Nuevo y original
	Mfr.#: FDD6690A-CUT TAPE OMO.#: OMO-FDD6690A-CUT-TAPE-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 3500
Ingrese la cantidad:

El precio actual de FDD6612A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,41 US$~~; ~~0,41 US$~~

10: ~~0,39 US$~~; ~~3,88 US$~~

100: ~~0,37 US$~~; ~~36,71 US$~~

500: ~~0,35 US$~~; ~~173,35 US$~~

1000: ~~0,33 US$~~; ~~326,30 US$~~

Empezar con

FDD6612A 5
FDD661 6
FDD66 99
FDD6 164
FDD 715

FDD6612A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes