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FP50R12KT4B11BOSA1

FP50R12KT4B11BOSA1
Mfr. #:
FP50R12KT4B11BOSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT MODULE 1200V 50A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FP50R12KT4B11BOSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FP50R12KT4B, FP50R12KT4, FP50R12KT, FP50R12K, FP50R1, FP50R, FP50, FP5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1200V 50A 280000mW 23-Pin ECONO2-4 Tray
***et Europe
Trans IGBT Module N-CH 1200V 50A 23-Pin ECONO2-4
***Components
In a Box of 10, Infineon FP50R12KT4B11BOSA1, ECONO2 , N-Channel 3 Phase Bridge IGBT Module, 50 A max, 1200 V, PCB Mount
***ronik
3PH-PIM 1200V 50A EconoPIM2Fit
***i-Key
IGBT MODULE 1200V 50A
***et
LOW POWER ECONO
***ark
IGBT, MODULE, N-CH, 1.2KV, 50A; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:280W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 50A; Transistor Polarity:N Channel; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:280W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EconoPIM 2 Series; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, MODULO, CA-N, 1.2KV, 50A; Polarità Transistor:Canale N; Corrente di Collettore CC:50A; Tensione Saturaz Collettore-Emettitore Vce(on):1.85V; Dissipazione di Potenza Pd:280W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EconoPIM 2 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
EconoPIM 2 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Low Switching Losses; Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power and Thermal Cycling Capability; Integrated NTC temperature sensor; Copper Base Plate; Standard Housing | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon
Parte # Mfg. Descripción Valores Precio
FP50R12KT4B11BOSA1
DISTI # V99:2348_18206018		Infineon Technologies AGTrans IGBT Module N-CH 1200V 50A 280000mW 23-Pin Tray
RoHS: Compliant		10
  • 1:$101.3700
FP50R12KT4B11BOSA1
DISTI # FP50R12KT4B11BOSA1-ND		Infineon Technologies AGIGBT MODULE 1200V 50A
RoHS: Compliant
Min Qty: 1
Container: Bulk		42In Stock
  • 1:$106.7700
FP50R12KT4B11BOSA1
DISTI # 27472371		Infineon Technologies AGTrans IGBT Module N-CH 1200V 50A 280000mW 23-Pin Tray
RoHS: Compliant		10
  • 1:$101.3700
FP50R12KT4B11BOSA1
DISTI # 26200128		Infineon Technologies AGTrans IGBT Module N-CH 1200V 50A 280000mW 23-Pin Tray
RoHS: Compliant		10
  • 10:$102.4992
FP50R12KT4B11BOSA1
DISTI # FP50R12KT4B11BOSA1		Infineon Technologies AGLOW POWER ECONO - Trays (Alt: FP50R12KT4B11BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 10:$94.4900
  • 20:$91.0900
  • 40:$87.7900
  • 60:$84.7900
  • 100:$83.2900
FP50R12KT4B11BOSA1
DISTI # 34AC1529		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 50A,Transistor Polarity:N Channel,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:280W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes6
  • 1:$106.7700
FP50R12KT4_B11
DISTI # 641-FP50R12KT4_B11		Infineon Technologies AGIGBT Modules N-CH 1.2KV 50A6
  • 1:$104.9700
  • 5:$103.0400
  • 10:$98.4100
FP50R12KT4B11BOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel
RoHS: Compliant		12
  • 1000:$72.5900
  • 500:$76.4100
  • 100:$79.5500
  • 25:$82.9600
  • 1:$89.3400
FP50R12KT4B11BOSA1
DISTI # 8386854		Infineon Technologies AGIGBT MODULE N-CH 1.2KV 50A AG-ECONO2-4, EA3
  • 1:£74.2100
  • 5:£70.2000
  • 10:£68.3600
  • 25:£66.6000
FP50R12KT4B11BOSA1
DISTI # 2781246		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 50A
RoHS: Compliant		6
  • 1:£74.2100
  • 5:£70.2000
  • 10:£66.6000
  • 50:£65.2700
FP50R12KT4B11BOSA1
DISTI # C1S322000686322		Infineon Technologies AGTrans IGBT Module N-CH 1200V 50A 280000mW 23-Pin ECONO2-4 Tray
RoHS: Compliant		10
  • 1:$101.5400
FP50R12KT4B11BOSA1
DISTI # C1S322000458181		Infineon Technologies AGTrans IGBT Module N-CH 1200V 50A 280000mW 23-Pin ECONO2-4 Tray
RoHS: Compliant		10
  • 10:$109.0000
FP50R12KT4B11BOSA1
DISTI # 2781246		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 50A
RoHS: Compliant		6
  • 1:$161.2700
  • 5:$155.5100
  • 10:$150.1500
  • 50:$145.1400
Imagen Parte # Descripción
FP50R12KT4G_B15

Mfr.#: FP50R12KT4G_B15

OMO.#: OMO-FP50R12KT4G-B15

 IGBT Modules IGBT Module 50A 1200V
FP50R12KT3

Mfr.#: FP50R12KT3

OMO.#: OMO-FP50R12KT3

 IGBT Modules N-CH 1.2KV 75A
FP50R12KT4

Mfr.#: FP50R12KT4

OMO.#: OMO-FP50R12KT4

 IGBT Modules N-CH 1.2KV 50A
FP50R12KT4-B15

Mfr.#: FP50R12KT4-B15

OMO.#: OMO-FP50R12KT4-B15-1190

 Nuevo y original
FP50R12KT4G-B15

Mfr.#: FP50R12KT4G-B15

OMO.#: OMO-FP50R12KT4G-B15-1190

 Nuevo y original
FP50R12KT4G_B11

Mfr.#: FP50R12KT4G_B11

OMO.#: OMO-FP50R12KT4G-B11-1190

 Nuevo y original
FP50R12KT4_B11ENG

Mfr.#: FP50R12KT4_B11ENG

OMO.#: OMO-FP50R12KT4-B11ENG-1190

 Nuevo y original
FP50R12KT4GBOSA1

Mfr.#: FP50R12KT4GBOSA1

OMO.#: OMO-FP50R12KT4GBOSA1-INFINEON-TECHNOLOGIES

 IGBT MODULE VCES 600V 50A
FP50R12KT4_B11

Mfr.#: FP50R12KT4_B11

OMO.#: OMO-FP50R12KT4-B11-125

 IGBT Modules N-CH 1.2KV 50A
FP50R12KT4B16BOSA1

Mfr.#: FP50R12KT4B16BOSA1

OMO.#: OMO-FP50R12KT4B16BOSA1-INFINEON-TECHNOLOGIES

 MOD IGBT LOW PWR ECONO3-3
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de FP50R12KT4B11BOSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
108,88 US$
108,88 US$
10
103,44 US$
1 034,41 US$
100
98,00 US$
9 799,65 US$
500
92,55 US$
46 276,15 US$
1000
87,11 US$
87 108,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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