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SIR404DP-T1-GE3

SIR404DP-T1-GE3
Mfr. #:
SIR404DP-T1-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 20V 60A 104W 1.6mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIR404DP-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Serie
SIRxxxDP
embalaje
Carrete
Alias ​​de parte
SIR404DP-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SO-PowerPAK-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente triple de drenaje cuádruple simple
Tipo transistor
1 N-Channel
Disipación de potencia Pd
6.25 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
26 ns
Hora de levantarse
20 ns
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
45.6 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Resistencia a la fuente de desagüe de Rds
1.6 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
123 ns
Tiempo de retardo de encendido típico
35 ns
Modo de canal
Mejora
Tags
SIR404, SIR40, SIR4, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 20V 60A 8-Pin PowerPAK SO T/R / MOSFET N-CH 20V 60A PPAK SO-8
***ure Electronics
Single N-Channel 20 V 0.00225 Ohm 97 nC 6.25 W Silicon SMT Mosfet POWERPAK-SO-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:45.6A; On Resistance Rds(On):0.0013Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SIR404DP-T1-GE3
DISTI # V72:2272_09215728		Vishay IntertechnologiesTrans MOSFET N-CH 20V 45.6A 8-Pin PowerPAK SO T/R
RoHS: Compliant		2855
  • 1000:$0.8483
  • 500:$1.0026
  • 250:$1.1262
  • 100:$1.1384
  • 25:$1.4058
  • 10:$1.4221
  • 1:$1.6516
SIR404DP-T1-GE3
DISTI # SIR404DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 20V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7964In Stock
  • 1000:$1.0678
  • 500:$1.2888
  • 100:$1.6570
  • 10:$2.0620
  • 1:$2.2800
SIR404DP-T1-GE3
DISTI # SIR404DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 20V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7964In Stock
  • 1000:$1.0678
  • 500:$1.2888
  • 100:$1.6570
  • 10:$2.0620
  • 1:$2.2800
SIR404DP-T1-GE3
DISTI # SIR404DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 20V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.9653
SIR404DP-T1-GE3
DISTI # 27527362		Vishay IntertechnologiesTrans MOSFET N-CH 20V 45.6A 8-Pin PowerPAK SO T/R
RoHS: Compliant		2855
  • 1000:$0.8483
  • 500:$1.0026
  • 250:$1.1262
  • 100:$1.1384
  • 25:$1.4058
  • 10:$1.4221
  • 8:$1.6516
SIR404DP-T1-GE3
DISTI # SIR404DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 45.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR404DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.9459
  • 6000:$0.9179
  • 12000:$0.8799
  • 18000:$0.8559
  • 30000:$0.8329
SIR404DP-T1-GE3
DISTI # 15R4877		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET0
  • 1:$0.9650
  • 3000:$0.9650
SIR404DP-T1-GE3.
DISTI # 26AC3304		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:45.6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power Dissipation Pd:104W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.9650
  • 3000:$0.9650
SIR404DP-T1-GE3
DISTI # 781-SIR404DP-GE3		Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs PowerPAK SO-8
RoHS: Compliant		20631
  • 1:$2.0200
  • 10:$1.6800
  • 100:$1.3000
  • 500:$1.1400
  • 1000:$0.9430
  • 3000:$0.8780
  • 6000:$0.8460
  • 9000:$0.8450
SIR404DP-T1-GE3
DISTI # C1S803601532880		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		2855
  • 250:$1.1262
  • 100:$1.1384
  • 25:$1.4058
  • 10:$1.4221
Imagen Parte # Descripción
SIR404DP-T1-GE3

Mfr.#: SIR404DP-T1-GE3

OMO.#: OMO-SIR404DP-T1-GE3

 MOSFET 20V Vds 12V Vgs PowerPAK SO-8
SIR404DP-T1-GE3

Mfr.#: SIR404DP-T1-GE3

OMO.#: OMO-SIR404DP-T1-GE3-VISHAY

 RF Bipolar Transistors MOSFET 20V 60A 104W 1.6mohm @ 10V
SIR404DP

Mfr.#: SIR404DP

OMO.#: OMO-SIR404DP-1190

 Nuevo y original
SIR404DP-T1-E3

Mfr.#: SIR404DP-T1-E3

OMO.#: OMO-SIR404DP-T1-E3-1190

 Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de SIR404DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,25 US$
1,25 US$
10
1,19 US$
11,87 US$
100
1,12 US$
112,44 US$
500
1,06 US$
530,95 US$
1000
1,00 US$
999,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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