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BSF024N03LT3GXUMA1

BSF024N03LT3GXUMA1
Mfr. #:
BSF024N03LT3GXUMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 30V 106A 2WDSON
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSF024N03LT3GXUMA1 Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
BSF024N03LT3GXUMA1 DatasheetBSF024N03LT3GXUMA1 Datasheet (P4-P6)BSF024N03LT3GXUMA1 Datasheet (P7-P9)BSF024N03LT3GXUMA1 Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Tags
BSF0, BSF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 15A 6-Pin WDSON
***i-Key
MOSFET N-CH 30V 15A/106A 2WDSON
***el Electronic
CAP CER 3.3PF 25V C0G/NP0 01005
***ure Electronics
N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ
***Yang
Trans MOSFET N-CH 30V 18.5A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***ment14 APAC
MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.5mohm; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:74A; Termination Type:SMD; Transistor Type:Trench; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
***ment14 APAC
MOSFET, N-CH, 30V, 16A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:30V; On Resistance
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-DSO-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ure Electronics
Single N-Channel 30 V 2.5 W 112 nC Silicon Surface Mount Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 18A, 4.2mΩ
***Yang
Trans MOSFET N-CH 30V 18A 8-Pin SOIC N T/R - Tape and Reel
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:90A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***Yang
Transistor MOSFET Array Dual N-CH 30V 23A/45A 8-Pin Power 33 T/R - Tape and Reel
***emi
Dual N-Channel PowerTrench® MOSFET 30V, 9.5mΩ and 20mΩ
*** Source Electronics
MOSFET 2N-CH 30V 8A/12A POWER33 / Trans MOSFET N-CH Si 30V 18A 8-Pin WDFN EP T/R
***ment14 APAC
MOSFET,NN CH,30V,18A,POWER33; Module Configuration:Dual; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:2.2W
***rchild Semiconductor
This device includes two specialized N-channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
***ical
Trans MOSFET P-CH 30V 12A Automotive 8-Pin SOP EP T/R
***(Formerly Allied Electronics)
MOSFET P-Channel 30V 12A SOIC8PEP
***ure Electronics
DMG4413LSS Series 30 V 10.5 A P-Channel Enhancement Mode Mosfet - SO-8
***ark
Mosfet, P-Ch, 30V, 12A, Soic Rohs Compliant: Yes
***ow.cn
SI7636DP-T1-E3 Vishay MOSFETs Transistor N-CH 30V 17A 8-Pin PowerPAK SO T/R - Arrow.com
***ure Electronics
Si7636DP Series N-Channel 30 V 4 mOhms SMT Power Mosfet - PowerPAK SO-8
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:28A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.004ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V; Power Dissipation, Pd:1.9W ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
BSF024N03LT3GXUMA1
DISTI # BSF024N03LT3GXUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 106A 2WDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5000In Stock
  • 1000:$0.8040
  • 500:$1.0184
  • 100:$1.3132
  • 10:$1.6620
  • 1:$1.8800
BSF024N03LT3GXUMA1
DISTI # BSF024N03LT3GXUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 106A 2WDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5000In Stock
  • 1000:$0.8040
  • 500:$1.0184
  • 100:$1.3132
  • 10:$1.6620
  • 1:$1.8800
BSF024N03LT3GXUMA1
DISTI # BSF024N03LT3GXUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 106A 2WDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
    BSF024N03LT3 G
    DISTI # 726-BSF024N03LT3G    		Infineon Technologies AGMOSFET N-Ch 30V 106A CanPAK3 ST OptiMOS 3
    RoHS: Compliant    		0
      Imagen Parte # Descripción
      BSF024N03LT3G

      Mfr.#: BSF024N03LT3G

      OMO.#: OMO-BSF024N03LT3G-1190

      		 Power Field-Effect Transistor, 15A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      BSF024N03LT3GXUMA1

      Mfr.#: BSF024N03LT3GXUMA1

      OMO.#: OMO-BSF024N03LT3GXUMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 106A 2WDSON
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de BSF024N03LT3GXUMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,21 US$
      1,21 US$
      10
      1,15 US$
      11,46 US$
      100
      1,09 US$
      108,54 US$
      500
      1,03 US$
      512,55 US$
      1000
      0,96 US$
      964,80 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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