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BUL642D2G

BUL642D2G
Mfr. #:
BUL642D2G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT BIP NPN 3A 825V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BUL642D2G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BUL642D2G DatasheetBUL642D2G Datasheet (P4-P6)BUL642D2G Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Polaridad del transistor:
NPN
Configuración:
Único
Voltaje colector-emisor VCEO Max:
440 V
Colector- Voltaje base VCBO:
825 V
Emisor- Voltaje base VEBO:
11 V
Voltaje de saturación colector-emisor:
1.5 V
Corriente máxima del colector de CC:
11 A
Producto de ganancia de ancho de banda fT:
13 MHz
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Altura:
9.28 mm (Max)
Longitud:
10.28 mm (Max)
Ancho:
4.82 mm (Max)
Marca:
EN Semiconductor
Corriente continua del colector:
3 A
Colector de CC / Ganancia base hfe Min:
16
Pd - Disipación de energía:
75 W
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
1
Subcategoría:
Transistores
Unidad de peso:
0.211644 oz
Tags
BUL6, BUL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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TRANS, NPN, 500V, 5A, 150DEG C, 40W; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:5A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:15MHzRoHS Compliant: Yes
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Parte # Mfg. Descripción Valores Precio
BUL642D2G
DISTI # BUL642D2G-ND		ON SemiconductorTRANS NPN 440V 3A TO-220AB
RoHS: Compliant
Min Qty: 300
Container: Tube		Limited Supply - Call
    BUL642D2G
    DISTI # 863-BUL642D2G    		ON SemiconductorBipolar Transistors - BJT BIP NPN 3A 825V
    RoHS: Compliant    		0
      BUL642D2GON SemiconductorPower Bipolar Transistor, 3A I(C), 440V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
      RoHS: Compliant      		1350
      • 1000:$0.6600
      • 500:$0.6900
      • 100:$0.7200
      • 25:$0.7500
      • 1:$0.8100
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      OMO.#: OMO-BUL642D2G-ON-SEMICONDUCTOR

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      Disponibilidad
      Valores:
      Available
      En orden:
      4000
      Ingrese la cantidad:
      El precio actual de BUL642D2G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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