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SI4825DDY-T1-GE3

SI4825DDY-T1-GE3
Mfr. #:
SI4825DDY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET -30V Vds 25V Vgs SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4825DDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4825DDY-T1-GE3 DatasheetSI4825DDY-T1-GE3 Datasheet (P4-P6)SI4825DDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SI4825DDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
14.9 A
Rds On - Resistencia de la fuente de drenaje:
12.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.4 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
57 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
5 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI4
Tipo de transistor:
1 P-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
28 S
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 ns
Tiempo típico de retardo de encendido:
13 ns
Parte # Alias:
SI4825DDY-GE3
Unidad de peso:
0.006596 oz
Tags
SI4825D, SI4825, SI482, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***y
    S***y
    IN

    Received the order within three weeks... tested too... it works quite well and is highly accurate in giving the coordinates... just one note... when I used the first time, it took about an hour to get a satellite lock anyway an impressive product and the description was very accurate, you get what you see... loved the seller, must buy.♥️

    2019-06-05
    R***v
    R***v
    FR

    As in the description, it came 15 days before spassk-far

    2019-06-21
***et Europe
Trans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14.9A; On Resistance Rds(On):0.01Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V Rohs Compliant: No
***ment14 APAC
MOSFET,P CH,DIODE,30V,14.9A,8-SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-14.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-10.9A; Power Dissipation Pd:2.7W; Voltage Vgs Max:-25V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4825DDY-T1-GE3
DISTI # V72:2272_09216587		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant		2238
  • 1000:$0.4110
  • 500:$0.5030
  • 250:$0.5695
  • 100:$0.5930
  • 25:$0.7467
  • 10:$0.8477
  • 1:$1.0227
SI4825DDY-T1-GE3
DISTI # V36:1790_09216587		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500000:$0.3681
  • 1250000:$0.3683
  • 250000:$0.3785
  • 25000:$0.3944
  • 2500:$0.3969
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 14.9A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		12251In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 14.9A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		12251In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 14.9A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		10000In Stock
  • 25000:$0.3591
  • 12500:$0.3629
  • 5000:$0.3771
  • 2500:$0.3969
SI4825DDY-T1-GE3
DISTI # 31264063		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant		5000
  • 2500:$0.3139
SI4825DDY-T1-GE3
DISTI # 30172383		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R
RoHS: Compliant		2238
  • 19:$1.0227
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R (Alt: SI4825DDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 12500
  • 125000:$0.4913
  • 62500:$0.4997
  • 25000:$0.5083
  • 12500:$0.5264
  • 7500:$0.5459
  • 5000:$0.5669
  • 2500:$0.5896
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R (Alt: SI4825DDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.3289
  • 15000:€0.3539
  • 10000:€0.3829
  • 5000:€0.4449
  • 2500:€0.6529
SI4825DDY-T1-GE3
DISTI # SI4825DDY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 10.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4825DDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3462
  • 15000:$0.3557
  • 10000:$0.3659
  • 5000:$0.3814
  • 2500:$0.3930
SI4825DDY-T1-GE3
DISTI # 15R5086		Vishay IntertechnologiesMOSFET Transistor, P Channel, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V0
  • 10000:$0.3390
  • 6000:$0.3470
  • 4000:$0.3600
  • 2000:$0.4000
  • 1000:$0.4400
  • 1:$0.4590
SI4825DDY-T1-GE3
DISTI # 23T8516		Vishay IntertechnologiesMOSFET,P CHANNEL,DIODE,30V,14.9A,8-SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-14.9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes4305
  • 500:$0.5570
  • 250:$0.5970
  • 100:$0.6360
  • 50:$0.6930
  • 25:$0.7510
  • 10:$0.8080
  • 1:$0.9720
SI4825DDY-T1-GE3.
DISTI # 28AC2146		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-14.9A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.4V,Power Dissipation Pd:2.7W,No. of Pins:8PinsRoHS Compliant: No0
  • 10000:$0.3390
  • 6000:$0.3470
  • 4000:$0.3600
  • 2000:$0.4000
  • 1000:$0.4400
  • 1:$0.4590
SI4825DDY-T1-GE3
DISTI # 70459545		Vishay Siliconix30V 14.9A 5.0W 12.5mohm @ 10V
RoHS: Compliant		0
  • 2500:$0.5720
  • 5000:$0.5450
SI4825DDY-T1-GE3
DISTI # 781-SI4825DDY-GE3		Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs SO-8
RoHS: Compliant		6464
  • 1:$0.9400
  • 10:$0.7770
  • 100:$0.5960
  • 500:$0.5130
  • 1000:$0.4040
  • 2500:$0.3770
  • 5000:$0.3590
  • 10000:$0.3450
SI4825DDY-T1-GE3Vishay Semiconductors14900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA1520
  • 365:$0.4400
  • 92:$0.5500
  • 1:$1.1000
SI4825DDY-T1-GE3
DISTI # 1807295		Vishay IntertechnologiesP-CH MOSFET SO-8 30V 13MOHM @ 10V- LEAD(, RL2470
  • 10000:£0.3200
  • 5000:£0.3300
  • 2500:£0.3410
SI4825DDY-T1-GE3
DISTI # TMOSP10626		Vishay IntertechnologiesP-CH 30V 14,9A 12,5mOhm SO-8
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 2500:$0.4940
  • 5000:$0.4658
  • 7500:$0.4375
  • 10000:$0.3811
SI4825DDY-T1-GE3
DISTI # 1858962		Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,14.9A,8-SOIC4680
  • 500:£0.3600
  • 250:£0.3890
  • 100:£0.4180
  • 25:£0.5450
  • 5:£0.6770
SI4825DDY-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 25V Vgs SO-8
RoHS: Compliant		Americas - 2500
    SI4825DDY-T1-GE3
    DISTI # 1858962RL    		Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,14.9A,8-SOIC
    RoHS: Compliant    		0
    • 2500:$0.7600
    • 500:$0.7750
    • 100:$0.9000
    • 10:$1.1700
    • 1:$1.4200
    SI4825DDY-T1-GE3
    DISTI # 1858962    		Vishay IntertechnologiesMOSFET,P CH,DIODE,30V,14.9A,8-SOIC
    RoHS: Compliant    		4300
    • 2500:$0.7600
    • 500:$0.7750
    • 100:$0.9000
    • 10:$1.1700
    • 1:$1.4200
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    Disponibilidad
    Valores:
    Available
    En orden:
    1989
    Ingrese la cantidad:
    El precio actual de SI4825DDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,94 US$
    0,94 US$
    10
    0,78 US$
    7,77 US$
    100
    0,60 US$
    59,60 US$
    500
    0,51 US$
    256,50 US$
    1000
    0,40 US$
    404,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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