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SIZ300DT-T1-GE3

SIZ300DT-T1-GE3
Mfr. #:
SIZ300DT-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2N-CH 30V 11A POWERPAIR
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIZ300DT-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SIZ300DT-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SIZ300DT-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-PowerWDFN
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-PowerPairR
Configuración
Doble
Tipo FET
2 N-Channel (Half Bridge)
Potencia máxima
16.7W, 31W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
400pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
11A, 28A
Rds-On-Max-Id-Vgs
24 mOhm @ 9.8A, 10V
Vgs-th-Max-Id
2.4V @ 250μA
Puerta-Carga-Qg-Vgs
12nC @ 10V
Disipación de potencia Pd
3.7 W 4.2 W
Otoño
10 ns 40 ns
Hora de levantarse
45 ns 80 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
9.8 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
2.4 V
Resistencia a la fuente de desagüe de Rds
20 mOhms 9 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
7.4 nC 14.2 nC
Transconductancia directa-Mín.
30 S
Tags
SIZ30, SiZ3, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R
***et
Trans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR T/R
***nell
MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8
***i-Key
MOSFET 2N-CH 30V 11A POWERPAIR
***
DUAL N-CHANNEL 30-V (D-S)
***ark
MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:16.7W; Operating Temperature Range:-55°C to +150°C; No. of Pins:8; Continuous Drain Current Id, N Channel:11A;RoHS Compliant: Yes
***ment14 APAC
MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8; MOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:16.7W
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Parte # Mfg. Descripción Valores Precio
SIZ300DT-T1-GE3
DISTI # V72:2272_09216119		Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R
RoHS: Compliant		1916
  • 1000:$0.4758
  • 500:$0.5568
  • 250:$0.6273
  • 100:$0.6290
  • 25:$0.7704
  • 10:$0.7734
  • 1:$0.8968
SIZ300DT-T1-GE3
DISTI # SIZ300DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 11A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		284In Stock
  • 1000:$0.5506
  • 500:$0.6975
  • 100:$0.8994
  • 10:$1.1380
  • 1:$1.2800
SIZ300DT-T1-GE3
DISTI # SIZ300DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 11A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		284In Stock
  • 1000:$0.5506
  • 500:$0.6975
  • 100:$0.8994
  • 10:$1.1380
  • 1:$1.2800
SIZ300DT-T1-GE3
DISTI # SIZ300DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 11A POWERPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.4990
SIZ300DT-T1-GE3
DISTI # 27088796		Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR EP T/R
RoHS: Compliant		1916
  • 1000:$0.4758
  • 500:$0.5568
  • 250:$0.6273
  • 100:$0.6290
  • 25:$0.7704
  • 16:$0.7734
SIZ300DT-T1-GE3
DISTI # SIZ300DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.8A/14.9A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ300DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.4709
  • 6000:$0.4569
  • 12000:$0.4389
  • 18000:$0.4259
  • 30000:$0.4149
SIZ300DT-T1-GE3
DISTI # 91T5908		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 11A, POWERPAIR-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
  • 1:$1.1400
  • 25:$0.9340
  • 50:$0.8260
  • 100:$0.7170
  • 250:$0.6670
  • 500:$0.6160
  • 1000:$0.5410
SIZ300DT-T1-GE3
DISTI # 91T5909		Vishay IntertechnologiesMOSFET, DUAL N CH, 30V, 11A, POWERPAIR-8, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.5580
  • 1000:$0.5350
  • 2000:$0.4860
  • 4000:$0.4380
  • 6000:$0.4220
  • 10000:$0.4120
SIZ300DT-T1-GE3
DISTI # 781-SIZ300DT-T1-GE3		Vishay IntertechnologiesMOSFET 30V 11A/28A 16.7/31W 24mohm/11mohm @ 10V
RoHS: Compliant		2946
  • 1:$1.1400
  • 10:$0.9340
  • 100:$0.7170
  • 500:$0.6160
  • 1000:$0.5410
  • 3000:$0.5400
SIZ300DT-T1-GE3Vishay Siliconix 1286
    SIZ300DT-T1-GE3Vishay IntertechnologiesMOSFET 30V 11A/28A 16.7/31W 24mohm/11mohm @ 10V
    RoHS: Compliant    		Americas -
      SIZ300DT-T1-GE3
      DISTI # C1S803603830999      		Vishay IntertechnologiesMOSFETs1916
      • 250:$0.6273
      • 100:$0.6290
      • 25:$0.7704
      • 10:$0.7734
      Imagen Parte # Descripción
      SIZ300DT-T1-GE3

      Mfr.#: SIZ300DT-T1-GE3

      OMO.#: OMO-SIZ300DT-T1-GE3

      		 MOSFET RECOMMENDED ALT 78-SIZ342DT-T1-GE3
      SIZ300DT (Z300)

      Mfr.#: SIZ300DT (Z300)

      OMO.#: OMO-SIZ300DT-Z300--1190

      		 Nuevo y original
      SIZ300DT-T1-GE3

      Mfr.#: SIZ300DT-T1-GE3

      OMO.#: OMO-SIZ300DT-T1-GE3-VISHAY

      		 MOSFET 2N-CH 30V 11A POWERPAIR
      SIZ300DT-TI-GE3

      Mfr.#: SIZ300DT-TI-GE3

      OMO.#: OMO-SIZ300DT-TI-GE3-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de SIZ300DT-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,58 US$
      0,58 US$
      10
      0,55 US$
      5,52 US$
      100
      0,52 US$
      52,25 US$
      500
      0,49 US$
      246,70 US$
      1000
      0,46 US$
      464,40 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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