OMO ElectronicOMO Electronic
Expand menu
0 Carro

SIR770DP-T1-GE3

SIR770DP-T1-GE3
Mfr. #:
SIR770DP-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2N-CH 30V 8A PPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIR770DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIR770DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Tape & Reel (TR)
Alias ​​de parte
SIR770DP-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAKR SO-8 Dual
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
PowerPAKR SO-8 Dual
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
17.8W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
900pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
8A
Rds-On-Max-Id-Vgs
21 mOhm @ 8A, 10V
Vgs-th-Max-Id
2.8V @ 250μA
Puerta-Carga-Qg-Vgs
21nC @ 10V
Disipación de potencia Pd
17.8 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
8 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.2 V to 2.8 V
Resistencia a la fuente de desagüe de Rds
17.5 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
14 nC
Transconductancia directa-Mín.
31 S
Tags
SIR770D, SIR770, SIR77, SIR7, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR770DP Series 30 V 0.021 Ohm SMT Dual N-Channel MOSFET - PowerPAK SO-8
***et
Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R
***ment14 APAC
MOSFET,NN CH,SC DIO,30V,8A,PPAKS08; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):17500µohm; Power Dissipation Pd:3.6W
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Parte # Mfg. Descripción Valores Precio
SIR770DP-T1-GE3
DISTI # SIR770DP-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 8A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.5236
SIR770DP-T1-GE3
DISTI # SIR770DP-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SIR770DP-T1-GE3
DISTI # SIR770DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 8A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SIR770DP-T1-GE3
DISTI # SIR770DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R (Alt: SIR770DP-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1:€1.0309
  • 10:€0.7389
  • 25:€0.5999
  • 50:€0.5299
  • 100:€0.5219
  • 500:€0.5139
  • 1000:€0.5069
SIR770DP-T1-GE3
DISTI # SIR770DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR770DP-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.4939
  • 6000:$0.4799
  • 12000:$0.4599
  • 18000:$0.4469
  • 30000:$0.4349
SIR770DP-T1-GE3
DISTI # 781-SIR770DP-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		0
  • 1:$1.1900
  • 10:$0.9800
  • 100:$0.7520
  • 500:$0.6470
  • 1000:$0.5670
SIR770DP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		Americas -
    Imagen Parte # Descripción
    SIR770DP-T1-GE3

    Mfr.#: SIR770DP-T1-GE3

    OMO.#: OMO-SIR770DP-T1-GE3

    		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
    SIR770DP

    Mfr.#: SIR770DP

    OMO.#: OMO-SIR770DP-1190

    		 Nuevo y original
    SIR770DP-T1-E3

    Mfr.#: SIR770DP-T1-E3

    OMO.#: OMO-SIR770DP-T1-E3-1190

    		 Nuevo y original
    SIR770DP-T1-GE3

    Mfr.#: SIR770DP-T1-GE3

    OMO.#: OMO-SIR770DP-T1-GE3-VISHAY

    		 MOSFET 2N-CH 30V 8A PPAK SO-8
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de SIR770DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,65 US$
    0,65 US$
    10
    0,62 US$
    6,20 US$
    100
    0,59 US$
    58,71 US$
    500
    0,55 US$
    277,25 US$
    1000
    0,52 US$
    521,90 US$
    Empezar con
    Top