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VN2410L-G-P013

VN2410L-G-P013
Mfr. #:
VN2410L-G-P013
Fabricante:
Microchip Technology
Descripción:
MOSFET N-CH Enhancmnt Mode MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
VN2410L-G-P013 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
VN2410L-G-P013 más información VN2410L-G-P013 Product Details
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-92-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
240 V
Id - Corriente de drenaje continua:
190 mA
Rds On - Resistencia de la fuente de drenaje:
10 Ohms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Ammo Pack
Producto:
Pequeña señal MOSFET
Tipo de transistor:
1 N-Channel
Marca:
Tecnología de microchip
Otoño:
24 ns
Tipo de producto:
MOSFET
Hora de levantarse:
8 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
23 ns
Tiempo típico de retardo de encendido:
8 ns
Unidad de peso:
0.016000 oz
Tags
VN2410L-G, VN2410L, VN241, VN24, VN2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 240V, 10 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES
***et
Trans MOSFET N-CH 240V 0.19A 3-Pin TO-92 T/R
***roFlash
Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***hard Electronics
Transistor: P-MOSFET; unipolar; -100V; -0.23A; 0.7W; TO92
***ure Electronics
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET - TO-92
***ark
P CH DMOS FET, -100V, 230mA, TO-92; Transistor Polarity:P Channel; Continuous Drain Current, Id:230mA; Drain Source Voltage, Vds:-100V; On Resistance, Rds(on):8ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-3.5V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:230mA; Current Temperature:25°C; Device Marking:ZVP2110A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Power Dissipation Ptot Max:700mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-3.5V; Voltage Vgs Rds on Measurement:-10V
***et Europe
Trans MOSFET P-CH 100V 0.23A 3-Pin E-Line Box
***ure Electronics
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET
***roFlash
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***ical
Trans MOSFET P-CH 240V 0.2A Automotive 3-Pin E-Line
***ure Electronics
P-Channel 240 V 1 A 750 mW Vertical DMOS FET - TO-92
***ark
Mosfet Bvdss: 101V~250V Ep3sc T&R 4K Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET P-Channel 240V 0.2A E-Line
***nell
MOSFET, P, LOGIC, E-LINE; Transistor Polarity: P Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: -240V; On Resistance Rds(on): 15ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power D
***S
French Electronic Distributor since 1988
***ukat
P-Ch -240V -0,2A 0,75W 9R E-Line
***et Europe
Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***r Electronics
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***p One Stop Global
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***el Electronic
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***icroelectronics
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in TO-92 package
***et
Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 Ammo Pack
*** Electronic Components
MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET
***r Electronics
Small Signal Field-Effect Transistor
***el Electronic
CAP CER 2200PF 250V C0G RADIAL
Parte # Mfg. Descripción Valores Precio
VN2410L-G-P013
DISTI # VN2410L-G-P013-ND		Microchip Technology IncMOSFET N-CH 240V 0.19A TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Box (TB)		Temporarily Out of Stock
  • 2000:$0.7416
VN2410L-G-P013
DISTI # VN2410L-G-P013		Microchip Technology IncTrans MOSFET N-CH 240V 0.19A 3-Pin TO-92 T/R - Ammo Pack (Alt: VN2410L-G-P013)
RoHS: Compliant
Min Qty: 2000
Container: Ammo Pack		Americas - 0
  • 2000:$0.5109
  • 4000:$0.4939
  • 8000:$0.4779
  • 12000:$0.4629
  • 20000:$0.4559
VN2410L-G-P013
DISTI # 70483926		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,240V,10 Ohm3 TO-92AMMO
RoHS: Compliant		0
  • 2000:$1.0500
VN2410L-G-P013
DISTI # 689-VN2410L-G-P013		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
RoHS: Compliant		894
  • 1:$0.9800
  • 10:$0.9650
  • 25:$0.8140
  • 100:$0.7420
VN2410L-G-P013
DISTI # VN2410L-G-P013		Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE240V10 Ohm
RoHS: Compliant		0
  • 1000:$0.6000
  • 100:$0.7200
  • 26:$0.7900
  • 1:$0.9500
Imagen Parte # Descripción
VN2410L-G-P013

Mfr.#: VN2410L-G-P013

OMO.#: OMO-VN2410L-G-P013

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Disponibilidad
Valores:
894
En orden:
2877
Ingrese la cantidad:
El precio actual de VN2410L-G-P013 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,97 US$
0,97 US$
10
0,96 US$
9,64 US$
25
0,81 US$
20,33 US$
100
0,74 US$
74,10 US$
250
0,65 US$
163,00 US$
500
0,56 US$
278,00 US$
1000
0,51 US$
506,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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