FGP20N60UFDTU

FGP20N60UFDTU
Mfr. #:
FGP20N60UFDTU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 600V, 20A Field Stop
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGP20N60UFDTU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FGP20N60UFDTU más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-220-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje máximo del emisor de puerta:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
FGP20N60UFD
Embalaje:
Tubo
Corriente continua de colector Ic Max:
40 A
Altura:
9.4 mm
Longitud:
10.67 mm
Ancho:
4.83 mm
Marca:
ON Semiconductor / Fairchild
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
800
Subcategoría:
IGBT
Unidad de peso:
0.063493 oz
Tags
FGP20N60U, FGP20N60, FGP20N, FGP2, FGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FGP20N60UFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-220-3
***ow.cn
Trans IGBT Chip N-CH 600V 40A 165000mW 3-Pin(3+Tab) TO-220 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, 600V, 40A, TO-220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 165W; Collector Emitter Voltage V(br)ceo: 600V; Transistor; Available until stocks are exhausted
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin TO-220 Tube
*** Electronic Components
IGBT Transistors IGBT PRODUCTS
***or
IKP20N60 - AUTOMOTIVE IGBT DISCR
***ical
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-220AB Tube
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers Dis High Perf IGBT
***-Wing Technology
Tube Through Hole N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.6V @ 15V 3A 6A 30W 52ns
***inecomponents.com
Discrete, High Performance IGBT with Diode
***el Electronic
Res Thick Film 0402 6.49K Ohm 1% 0.063W(1/16W) ±100ppm/C Pad SMD Automotive T/R
***i-Key
IGBT 600V 6A 22W TO220F
***i-Key Marketplace
IGBT, 6A, 600V, N-CHANNEL
***ser
IGBTs 600V/3A/w/FRD
***i-Key
IGBT 600V 28A 125W TO220AB
***el Electronic
IC REG LINEAR 3V 1.5A TO220FP-3
***nell
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:28A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-220AB; Alternate Case Style:TO-263; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:40A; No. of Pins:3; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:50ns; Time, Fall Typ:50ns; Time, Rise:4.5ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 600V 40A 37000mW 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
H Series 600 V 40 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP
***icroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***(Formerly Allied Electronics)
IGBT Trench gate,600V 20A/100 deg,TO220
***nell
IGBT, SINGLE, 600V, 40A, TO-220FP; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 37W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pi
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Parte # Mfg. Descripción Valores Precio
FGP20N60UFDTU
DISTI # V36:1790_06359735
ON SemiconductorN-CH 600VV 20A FS PLANAR IGBT394
  • 1000:$1.6770
  • 500:$1.9270
  • 100:$2.3290
  • 10:$2.6840
  • 1:$3.4573
FGP20N60UFDTU
DISTI # FGP20N60UFDTU-ND
ON SemiconductorIGBT 600V 40A 165W TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
2143In Stock
  • 3200:$1.4000
  • 800:$1.7430
  • 100:$2.0475
  • 25:$2.3624
  • 10:$2.4990
  • 1:$2.7800
FGP20N60UFDTU
DISTI # 33610389
ON SemiconductorN-CH 600VV 20A FS PLANAR IGBT394
  • 5:$1.3907
FGP20N60UFDTU
DISTI # FGP20N60UFDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube (Alt: FGP20N60UFDTU)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 500:€1.1900
  • 1000:€1.1900
  • 50:€1.2900
  • 100:€1.2900
  • 25:€1.3900
  • 10:€1.4900
  • 1:€1.6900
FGP20N60UFDTU
DISTI # FGP20N60UFDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: FGP20N60UFDTU)
RoHS: Compliant
Min Qty: 226
Container: Bulk
Americas - 0
  • 2260:$1.2900
  • 226:$1.3900
  • 452:$1.3900
  • 678:$1.3900
  • 1130:$1.3900
FGP20N60UFDTU
DISTI # FGP20N60UFDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube (Alt: FGP20N60UFDTU)
RoHS: Compliant
Min Qty: 800
Container: Tube
Asia - 0
  • 40000:$1.6393
  • 20000:$1.6667
  • 8000:$1.7241
  • 4000:$1.7857
  • 2400:$1.8519
  • 1600:$1.9231
  • 800:$2.0000
FGP20N60UFDTU
DISTI # FGP20N60UFDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FGP20N60UFDTU)
RoHS: Compliant
Min Qty: 800
Container: Tube
Americas - 0
  • 1600:$1.1900
  • 3200:$1.1900
  • 4800:$1.1900
  • 8000:$1.1900
  • 800:$1.2900
FGP20N60UFDTU
DISTI # 46AC0816
ON SemiconductorIGBT, 600V, 40A, TO-220-3,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:165W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-220,No. of Pins:3Pins,Operating RoHS Compliant: Yes2325
  • 5000:$1.5300
  • 2500:$1.5700
  • 1000:$1.8800
  • 500:$2.0700
  • 100:$2.2100
  • 10:$2.7100
  • 1:$3.1400
FGP20N60UFDTU
DISTI # 512-FGP20N60UFDTU
ON SemiconductorIGBT Transistors 600V, 20A Field Stop
RoHS: Compliant
1203
  • 1:$2.6400
  • 10:$2.2500
  • 100:$1.9500
  • 250:$1.8500
  • 500:$1.6600
  • 1000:$1.4000
  • 2500:$1.3300
  • 5000:$1.2800
FGP20N60UFDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
RoHS: Compliant
16
  • 1000:$1.4600
  • 500:$1.5400
  • 100:$1.6000
  • 25:$1.6700
  • 1:$1.8000
FGP20N60UFDTUFreescale Semiconductor*** FREE SHIPPING ORDERS OVER $100 *** 40A, 600V, N-CHANNEL IGBT, TO-220AB520
  • 516:$1.7325
  • 120:$1.9425
  • 1:$3.1500
FGP20N60UFDTU
DISTI # 8648896P
ON SemiconductorIGBT 600V 20A FIELD STOP TO220, TU1230
  • 800:£1.2540
  • 400:£1.3900
  • 200:£1.4700
  • 50:£1.6840
FGP20N60UFDTU
DISTI # 8648896
ON SemiconductorIGBT 600V 20A FIELD STOP TO220, PK155
  • 800:£1.2540
  • 400:£1.3900
  • 200:£1.4700
  • 50:£1.6840
  • 5:£1.9900
FGP20N60UFDTU
DISTI # 2825137
ON SemiconductorIGBT, 600V, 40A, TO-220-3
RoHS: Compliant
2325
  • 1000:$2.0300
  • 500:$2.2500
  • 250:$2.5600
  • 100:$2.8500
  • 10:$3.2900
  • 1:$3.7700
FGP20N60UFDTU
DISTI # 2825137
ON SemiconductorIGBT, 600V, 40A, TO-220-32325
  • 500:£1.2200
  • 250:£1.3600
  • 100:£1.4300
  • 10:£1.6400
  • 1:£2.1900
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Analog Comparators Singl 1.8V Push/Pull Comparator, E temp
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OMO.#: OMO-IRS2184SPBF

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OMO.#: OMO-IR1155STRPBF

Power Factor Correction - PFC Prog FREQ 1 CYCLE Cntrl PFC IC
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MOSFET SSOT-3 N-CH 30V
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Mfr.#: VIPER17HD

OMO.#: OMO-VIPER17HD

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Mfr.#: FFSP2065A

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Schottky Diodes & Rectifiers SIC TO220 SBD 20A 650V
RLP73N3AR075JTE

Mfr.#: RLP73N3AR075JTE

OMO.#: OMO-RLP73N3AR075JTE

Current Sense Resistors - SMD RLP73N 3A R075 5% 2K RL
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Mfr.#: 0679H0750-01

OMO.#: OMO-0679H0750-01

Surface Mount Fuses 750mA 350 VAC 72 VCD
IRS2184SPBF

Mfr.#: IRS2184SPBF

OMO.#: OMO-IRS2184SPBF-INFINEON-TECHNOLOGIES

Gate Drivers 3-Phase Bridge DRVR 600V 10V to 20V
IR1155STRPBF

Mfr.#: IR1155STRPBF

OMO.#: OMO-IR1155STRPBF-INFINEON-TECHNOLOGIES

Power Factor Correction - PFC Prog FREQ 1 CYCLE Cntrl PFC IC
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de FGP20N60UFDTU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,64 US$
2,64 US$
10
2,25 US$
22,50 US$
100
1,95 US$
195,00 US$
250
1,85 US$
462,50 US$
500
1,66 US$
830,00 US$
1000
1,40 US$
1 400,00 US$
2500
1,33 US$
3 325,00 US$
5000
1,28 US$
6 400,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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