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2SK3488-TD-E

2SK3488-TD-E
Mfr. #:
2SK3488-TD-E
Fabricante:
ON Semiconductor
Descripción:
Trans MOSFET N-CH Si 30V 2.5A 4-Pin(3+Tab) SOT-89
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
2SK3488-TD-E Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
2SK3488, 2SK348, 2SK34, 2SK3, 2SK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 30V 2.5A 4-Pin(3+Tab) SOT-89
***nell
MOSFET, N CH, 30V, 2.5A, SOT89; Transistor Polarity:N-Channel; Current Id Max:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:3.5W; Transistor Case Style:SOT-89; No. of Pins:3
***ark
Aec-Q101 Qualified P-Ch 30-V 175C Mosfet Rohs Compliant: Yes
***ical
Trans MOSFET P-CH 30V 3A Automotive 6-Pin SC-70 T/R
***el Electronic
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
***ment14 APAC
MOSFET, P-CH, 30V, 3A, 175DEG C, 3W;
***S
French Electronic Distributor since 1988
***
P-CHANNEL 30-V (D-S) 175C MOSF
***Yang
Transistor: N-MOSFET, unipolar, 30V, 2.7A, 0.1ohm, 1.3W, -55+150 deg.C, SMD, SOT23
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
*** Source Electronics
MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R
***ure Electronics
Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23
*** Electronics
IRLML2030TRPBF Infineon MOSFET N-Ch 30V 2.7A 3-PinSOT-23 T/R RoHS
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
***(Formerly Allied Electronics)
MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23
***roFlash
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ineon
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; On Resistance Rds(On):0.08Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 98Milliohms;ID -3A;Micro3;PD 1.25W;-55degc
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
***el Electronic
Surface Mount Ceramic Multilayer Capacitor 0.0022uF 10% X7R 100V 0805 Paper T/R
***ure Electronics
Single P-Channel 30 V 165 mOhm 14 nC HEXFET® Power Mosfet - MICRO-3
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-3A; On Resistance, Rds(on):98mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:Micro3 ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; Low Profile (less than 1.1mm); P-Channel MOSFET; SOT-23 Footprint | Target Applications: DC Switches; Load Switch
***nell
MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -; Power Dissipation Pd: 1.25W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Temperature: 25°C; External Depth: 2.5mm; External Length / Height: 1.12mm; External Width: 3.05mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 24A; SMD Marking: 1H; Tape Width: 8mm; Termination Type: Surface Mount Device; Voltage Vgs th Max: -2.5V
***ure Electronics
Trans MOSFET N-CH 30V 2.6A Automotive 3-Pin SOT-323 T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.6A; On Resistance Rds(On):0.067Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V Rohs Compliant: No
***nell
MOSFET, N-CH, 30V, 2.6A, SOT323; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 500mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***et Japan
Transistor MOSFET Array N-CH/P-CH 30V 3.4A 6-Pin TSOT-26 T/R
***sible Micro
Transistor, MOSFET, N/P Pair, 30V, 2.4/2.8A, TSOT-26, SMD
***nell
MOSFET, AECQ101, COMPLEMENT, 30V, TSOT26; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 3.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.3V; Power Dissipation Pd: 840mW; Transistor Case Style: TSOT-26; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***roFlash
Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
N & P Channel 30 V 60 mOhm Complementary Pair Enhancement Mode Mosfet-TSOT-23-6
***p One Stop
Trans MOSFET N/P-CH 30V 3.4A/2.8A Automotive 6-Pin TSOT-23 T/R
***ment14 APAC
MOSFET, COMPLEMENTARY, 30V, 3.4A, TSOT26; Transistor Polarity:N and P Complement; Continuous Drain Current Id:3.4A; Source Voltage Vds:30V; On
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TSOT-26 Polarity: N/P Variants: Enhancement mode Power dissipation: 0.84 W
***roFlash
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.06ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, COMPLEMENTARY, 30V, 3.4A, TSOT26; Transistor Polarity: N and P Complement; Continuous Drain Current Id: 3.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.3V; Power Dissipation Pd: 840mW; Transistor Case Style: TSOT-26; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Parte # Mfg. Descripción Valores Precio
2SK3488-TD-E
DISTI # V36:1790_16963185		ON SemiconductorTrans MOSFET N-CH Si 30V 2.5A 4-Pin(3+Tab) SOT-89
RoHS: Compliant		1000
  • 1000:$0.1220
2SK3488-TD-E
DISTI # 26066736		ON SemiconductorTrans MOSFET N-CH Si 30V 2.5A 4-Pin(3+Tab) SOT-89
RoHS: Compliant		1000
  • 1000:$0.1220
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Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de 2SK3488-TD-E es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,18 US$
0,18 US$
10
0,17 US$
1,74 US$
100
0,16 US$
16,47 US$
500
0,16 US$
77,80 US$
1000
0,15 US$
146,40 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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