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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SPD30N03S2L20GBTMA1 DISTI # SPD30N03S2L20GBTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPD30N03S2L20GBTMA1 DISTI # SPD30N03S2L20GBTMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SPD30N03S2L20GBTMA1 DISTI # SPD30N03S2L20GBTMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SPD30N03S2L20GBTMA1 DISTI # SPD30N03S2L20GBTMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 30A 3-Pin TO-252 T/R - Bulk (Alt: SPD30N03S2L20GBTMA1) Min Qty: 1087 Container: Bulk | Americas - 0 |
|
| SPD30N03S2L-20 G DISTI # 726-SPD30N03726S2L20 | Infineon Technologies AG | MOSFET N-Ch 30V 30A DPAK-2 RoHS: Compliant | 0 | |
| SPD30N03S2L-20G | Infineon Technologies AG | Power Field-Effect Transistor, 30A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 8367 |
|
| SPD30N03S2L20GBTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 30A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Not Compliant | 20000 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: SPD30N03S2L-10 OMO.#: OMO-SPD30N03S2L-10 |
MOSFET N-Ch 30V 30A DPAK-2 |
|
Mfr.#: SPD30N03S2L-10 G OMO.#: OMO-SPD30N03S2L-10-G-317 |
RF Bipolar Transistors MOSFET N-Ch 30V 30A DPAK-2 |
|
|
Mfr.#: SPD30N03S2L OMO.#: OMO-SPD30N03S2L-1190 |
Nuevo y original |
|
Mfr.#: SPD30N03S2L-07 |
MOSFET N-CH 30V 30A DPAK |
|
|
Mfr.#: SPD30N03S2L-07G OMO.#: OMO-SPD30N03S2L-07G-1190 |
Nuevo y original |
|
|
Mfr.#: SPD30N03S2L-08 OMO.#: OMO-SPD30N03S2L-08-1190 |
Nuevo y original |
|
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Mfr.#: SPD30N03S2L-10G OMO.#: OMO-SPD30N03S2L-10G-1190 |
Nuevo y original |
|
|
Mfr.#: SPD30N03S2L-20G OMO.#: OMO-SPD30N03S2L-20G-1190 |
Power Field-Effect Transistor, 30A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|
|
Mfr.#: SPD30N03S2L10GBTMA1 |
MOSFET N-CH 30V 30A TO252-3 |
|
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Mfr.#: SPD30N03S2L20GBTMA1 |
MOSFET N-CH 30V 30A TO252-3 |