SI7686DP-T1-GE3

SI7686DP-T1-GE3
Mfr. #:
SI7686DP-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 30V 35A PPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7686DP-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI7686DP-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SO-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
8 ns
Hora de levantarse
20 ns 16 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
17.9 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
9.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
20 ns 23 ns
Tiempo de retardo de encendido típico
20 ns 13 ns
Modo de canal
Mejora
Tags
SI7686DP-T1, SI7686DP-T, SI7686DP, SI7686D, SI7686, SI768, SI76, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 17.9A 8-Pin PowerPAK SO T/R
***C
Trans MOSFET N-CH 30V 17.9A 8-Pin PowerPAK SO
***nell
N CHANNEL MOSFET, 30V, 35A, SOIC
***i-Key
MOSFET N-CH 30V 35A PPAK SO-8
***ark
MOSFET TRANSISTOR; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:35A; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 30V, 35A, SOIC; Transi; N CHANNEL MOSFET, 30V, 35A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:30V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:3V; No. of Pins:8
Parte # Mfg. Descripción Valores Precio
SI7686DP-T1-GE3
DISTI # SI7686DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 35A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2983In Stock
  • 1000:$0.8378
  • 500:$1.0112
  • 100:$1.3001
  • 10:$1.6180
  • 1:$1.7900
SI7686DP-T1-GE3
DISTI # SI7686DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 35A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2983In Stock
  • 1000:$0.8378
  • 500:$1.0112
  • 100:$1.3001
  • 10:$1.6180
  • 1:$1.7900
SI7686DP-T1-GE3
DISTI # SI7686DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 35A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.7573
SI7686DP-T1-GE3
DISTI # SI7686DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 17.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7686DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.6579
  • 6000:$0.6379
  • 12000:$0.6119
  • 18000:$0.5949
  • 30000:$0.5789
SI7686DP-T1-GE3
DISTI # 26R1934
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$1.5900
  • 25:$1.3100
  • 50:$1.1600
  • 100:$1.0000
  • 250:$0.9300
  • 500:$0.8600
  • 1000:$0.6790
SI7686DP-T1-GE3
DISTI # 33P5422
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.7550
  • 3000:$0.7500
  • 6000:$0.7140
  • 12000:$0.6330
SI7686DP-T1-GE3
DISTI # 781-SI7686DP-T1-GE3
Vishay IntertechnologiesMOSFET 30V 35A 37.9W 9.5mohm @ 10V
RoHS: Compliant
5985
  • 1:$1.5900
  • 10:$1.3100
  • 100:$1.0000
  • 500:$0.8600
  • 1000:$0.6790
  • 3000:$0.6340
  • 6000:$0.6020
  • 9000:$0.5790
SI7686DP-T1-GE3
DISTI # 1871384
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A, SOIC
RoHS: Compliant
0
  • 3000:£0.6010
SI7686DP-T1-GE3
DISTI # 1871384
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35A, SOIC
RoHS: Compliant
0
  • 1:$2.5200
  • 10:$2.0700
  • 100:$1.5900
  • 500:$1.3700
  • 1000:$1.0800
  • 3000:$1.0100
  • 6000:$0.9530
  • 9000:$0.9390
Imagen Parte # Descripción
SI7686DP-T1-E3

Mfr.#: SI7686DP-T1-E3

OMO.#: OMO-SI7686DP-T1-E3

MOSFET 30V 35A 37.9W 9.5mohm @ 10V
SI7686DP-T1-E3-CUT TAPE

Mfr.#: SI7686DP-T1-E3-CUT TAPE

OMO.#: OMO-SI7686DP-T1-E3-CUT-TAPE-1190

Nuevo y original
SI7686DN

Mfr.#: SI7686DN

OMO.#: OMO-SI7686DN-1190

Nuevo y original
SI7686DP

Mfr.#: SI7686DP

OMO.#: OMO-SI7686DP-1190

Nuevo y original
SI7686DP-T1

Mfr.#: SI7686DP-T1

OMO.#: OMO-SI7686DP-T1-1190

Nuevo y original
SI7686DP-T1-E3

Mfr.#: SI7686DP-T1-E3

OMO.#: OMO-SI7686DP-T1-E3-VISHAY

MOSFET N-CH 30V 35A PPAK SO-8
SI7686DP-T1-GE3

Mfr.#: SI7686DP-T1-GE3

OMO.#: OMO-SI7686DP-T1-GE3-VISHAY

MOSFET N-CH 30V 35A PPAK SO-8
SI7686DP-T1-GP

Mfr.#: SI7686DP-T1-GP

OMO.#: OMO-SI7686DP-T1-GP-1190

Nuevo y original
SI7686DP-TI

Mfr.#: SI7686DP-TI

OMO.#: OMO-SI7686DP-TI-1190

Nuevo y original
SI7686DP-TI-E3

Mfr.#: SI7686DP-TI-E3

OMO.#: OMO-SI7686DP-TI-E3-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de SI7686DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,87 US$
0,87 US$
10
0,82 US$
8,25 US$
100
0,78 US$
78,15 US$
500
0,74 US$
369,05 US$
1000
0,69 US$
694,70 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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