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IXFT36N50P

IXFT36N50P
Mfr. #:
IXFT36N50P
Fabricante:
Littelfuse
Descripción:
MOSFET 500V 36A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFT36N50P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFT36N50P DatasheetIXFT36N50P Datasheet (P4-P6)
ECAD Model:
Más información:
IXFT36N50P más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-268-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
36 A
Rds On - Resistencia de la fuente de drenaje:
170 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
540 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Altura:
5.1 mm
Longitud:
16.05 mm
Serie:
IXFT36N50
Tipo de transistor:
1 N-Channel
Ancho:
14 mm
Marca:
IXYS
Transconductancia directa - Mín .:
36 S
Otoño:
21 ns
Tipo de producto:
MOSFET
Hora de levantarse:
27 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
75 ns
Tiempo típico de retardo de encendido:
25 ns
Unidad de peso:
0.158733 oz
Tags
IXFT3, IXFT, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 500 V 170 mOhm 93 nC HiPerFET Power Mosfet - TO-268
***ical
Trans MOSFET N-CH 500V 36A 3-Pin(2+Tab) TO-268
***el Electronic
MOSFET N-CH 500V 36A TO-268 D3
***nell
MOSFET, N, TO-268; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.17ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 540W; Transistor Case Style: TO-268; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017); Capacitance Ciss Typ: 5500pF; Current Id Max: 36A; Junction to Case Thermal Resistance A: 0.23°C/W; N-channel Gate Charge: 93nC; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Reverse Recovery Time trr Max: 200ns; Termination Type: Surface Mount Device; Voltage Vds Typ: 500V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFT36N50P
DISTI # V99:2348_15876816		IXYS CorporationTrans MOSFET N-CH 500V 36A 3-Pin(2+Tab) TO-268
RoHS: Compliant		30
  • 2500:$3.9320
  • 1000:$4.3580
  • 500:$4.8670
  • 250:$5.0599
  • 100:$5.7500
  • 50:$5.7830
  • 25:$6.1750
  • 10:$7.1270
  • 1:$7.2040
IXFT36N50P
DISTI # V36:1790_15876816		IXYS CorporationTrans MOSFET N-CH 500V 36A 3-Pin(2+Tab) TO-268
RoHS: Compliant		0
    IXFT36N50P
    DISTI # IXFT36N50P-ND    		IXYS CorporationMOSFET N-CH 500V 36A TO-268 D3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		185In Stock
    • 1020:$4.3120
    • 510:$4.7740
    • 120:$5.6980
    • 30:$6.3140
    • 1:$7.7000
    IXFT36N50P
    DISTI # 32319224    		IXYS CorporationTrans MOSFET N-CH 500V 36A 3-Pin(2+Tab) TO-268
    RoHS: Compliant    		30
    • 2500:$4.2269
    • 1000:$4.6848
    • 500:$5.2320
    • 250:$5.4394
    • 100:$6.1813
    • 50:$6.2167
    • 25:$6.6381
    • 10:$7.6615
    • 2:$7.7443
    IXFT36N50P
    DISTI # 03AH0944    		Littelfuse IncDISCMOSFETN-CH HIPERFET-POLAR TO-268AA / TUBE0
    • 1000:$5.3000
    • 500:$5.6400
    • 250:$6.0700
    • 100:$6.6300
    • 1:$8.1000
    IXFT36N50P
    DISTI # 747-IXFT36N50P    		IXYS CorporationMOSFET 500V 36A
    RoHS: Compliant    		538
    • 1:$8.8500
    • 10:$7.9700
    • 25:$6.6300
    • 50:$6.1600
    • 100:$6.0200
    • 250:$5.5000
    • 500:$5.0100
    • 1000:$4.7800
    IXFT36N50P
    DISTI # 1427340    		IXYS CorporationMOSFET, N, TO-268
    RoHS: Compliant    		0
    • 510:$7.2400
    • 120:$8.6400
    • 30:$9.5700
    • 1:$11.6600
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    OMO.#: OMO-AZ1117IH-3-3TRG1-DIODES-INCORPORATED

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    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de IXFT36N50P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    8,85 US$
    8,85 US$
    10
    7,97 US$
    79,70 US$
    25
    6,63 US$
    165,75 US$
    50
    6,16 US$
    308,00 US$
    100
    6,02 US$
    602,00 US$
    250
    5,50 US$
    1 375,00 US$
    500
    5,01 US$
    2 505,00 US$
    1000
    4,78 US$
    4 780,00 US$
    2500
    4,10 US$
    10 250,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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