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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| RFD3N08LSM9A | Harris Semiconductor | Power Field-Effect Transistor, 3A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 2425 |
|
| RFD3N08LSM9A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 5490 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: RFD3N08L OMO.#: OMO-RFD3N08L-1190 |
Power Field-Effect Transistor, 3A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
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Mfr.#: RFD3N08LSM OMO.#: OMO-RFD3N08LSM-1190 |
Nuevo y original |
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Mfr.#: RFD3N08LSM9A OMO.#: OMO-RFD3N08LSM9A-1190 |
Power Field-Effect Transistor, 3A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |