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SIHG33N65E-GE3

SIHG33N65E-GE3
Mfr. #:
SIHG33N65E-GE3
Fabricante:
Vishay
Descripción:
Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHG33N65E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHG33N65E-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIHG33, SIHG3, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC
***et
Trans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC
***i-Key
MOSFET N-CH 650V 32.4A TO-247AC
***ark
Mosfet, N-Ch, 650V, 32.4A, To-247Ac-3; Transistor Polarity:n Channel; Continuous Drain Current Id:32.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.09Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 32.4A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:32.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:313W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:E-Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited
***nell
MOSFET, CA-N, 650V, 32.4A, TO-247AC-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:32.4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.09ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:E-Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Parte # Mfg. Descripción Valores Precio
SIHG33N65E-GE3
DISTI # V36:1790_14664699		Vishay IntertechnologiesTrans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC0
  • 500000:$3.7410
  • 250000:$3.7460
  • 50000:$4.3670
  • 5000:$5.6300
  • 500:$5.8500
SIHG33N65E-GE3
DISTI # SIHG33N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 32.4A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		868In Stock
  • 2500:$3.7456
  • 500:$4.4659
  • 100:$5.1285
  • 25:$5.9064
  • 10:$6.1950
  • 1:$6.8600
SIHG33N65E-GE3
DISTI # SIHG33N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC (Alt: SIHG33N65E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 50
  • 1000:€3.3900
  • 100:€3.4900
  • 500:€3.4900
  • 50:€3.5900
  • 25:€3.9900
  • 10:€4.8900
  • 1:€6.1900
SIHG33N65E-GE3
DISTI # SIHG33N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 32.4A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG33N65E-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$3.4900
  • 3000:$3.5900
  • 2000:$3.6900
  • 1000:$3.7900
  • 500:$3.8900
SIHG33N65E-GE3
DISTI # 78-SIHG33N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-247AC
RoHS: Compliant		0
  • 1:$6.8600
  • 10:$6.1700
  • 25:$5.6200
  • 100:$5.0700
  • 250:$4.6600
  • 500:$4.2500
  • 1000:$3.7000
SIHG33N65EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 32.4A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		500
    SIHG33N65E-GE3
    DISTI # 2576519    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 32.4A, TO-247AC-36
    • 100:£3.8800
    • 50:£4.0900
    • 10:£4.3000
    • 5:£5.2300
    • 1:£5.7400
    SIHG33N65E-GE3
    DISTI # 2576519    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 32.4A, TO-247AC-3
    RoHS: Compliant    		6
    • 100:$9.0700
    • 10:$11.0300
    • 1:$12.2500
    Imagen Parte # Descripción
    SIHG33N65EF-GE3

    Mfr.#: SIHG33N65EF-GE3

    OMO.#: OMO-SIHG33N65EF-GE3

    		 MOSFET 650V Vds 30V Vgs TO-247AC
    SIHG33N60EF-GE3

    Mfr.#: SIHG33N60EF-GE3

    OMO.#: OMO-SIHG33N60EF-GE3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    SIHG33N65E-GE3

    Mfr.#: SIHG33N65E-GE3

    OMO.#: OMO-SIHG33N65E-GE3

    		 MOSFET 650V Vds 30V Vgs TO-247AC
    SIHG33N60E-E3

    Mfr.#: SIHG33N60E-E3

    OMO.#: OMO-SIHG33N60E-E3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    SIHG33N60E-GE3

    Mfr.#: SIHG33N60E-GE3

    OMO.#: OMO-SIHG33N60E-GE3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    SIHG33N60E-GE3

    Mfr.#: SIHG33N60E-GE3

    OMO.#: OMO-SIHG33N60E-GE3-VISHAY

    		 Darlington Transistors MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS
    SIHG33N60E-E3

    Mfr.#: SIHG33N60E-E3

    OMO.#: OMO-SIHG33N60E-E3-VISHAY

    		 MOSFET N-CH 600V 33A TO247AC
    SIHG33N60E-G3

    Mfr.#: SIHG33N60E-G3

    OMO.#: OMO-SIHG33N60E-G3-1190

    		 Nuevo y original
    SIHG33N60E-GE3,G33N60E,

    Mfr.#: SIHG33N60E-GE3,G33N60E,

    OMO.#: OMO-SIHG33N60E-GE3-G33N60E--1190

    		 Nuevo y original
    SIHG33N65E-GE3

    Mfr.#: SIHG33N65E-GE3

    OMO.#: OMO-SIHG33N65E-GE3-VISHAY

    		 Trans MOSFET N-CH 650V 32.4A 3-Pin(3+Tab) TO-247AC
    Disponibilidad
    Valores:
    Available
    En orden:
    1500
    Ingrese la cantidad:
    El precio actual de SIHG33N65E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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