We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| 2MBI100VA-060-50 DISTI # 43AC9984 | Fuji Electric Co Ltd | IGBT, MODULE, N-CH, 600V, 100A,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:650W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case RoHS Compliant: Yes | 0 |
|
| 2MBI100VA-060-50 DISTI # 1109124 | Fuji Electric Co Ltd | DUAL IGBT MODULE V SERIES600V 100A, EA | 52 |
|
| 2MBI100VA-060-50 DISTI # FE0000000000378 | Fuji Electric Co Ltd | Insulated Gate Bipolar Transistor RoHS: Compliant | 0 in Stock0 on Order |
|
| 2MBI100VA-060-50-M DISTI # FE0000000001869 | Fuji Electric Co Ltd | Insulated Gate Bipolar Transistor RoHS: Compliant | 0 in Stock0 on Order |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: 2MBI100VA-060-50 OMO.#: OMO-2MBI100VA-060-50-1190 |
IGBT, MODULE, N-CH, 600V, 100A, Transistor Polarity:N Channel, DC Collector Current:100A, Collector Emitter Saturation Voltage Vce(on):1.6V, Power Dissipation Pd:650W, Collector Emitter Voltage V |
|
|
Mfr.#: 2MBI100VA-120-50 OMO.#: OMO-2MBI100VA-120-50-1190 |
DUAL IGBT MODULE 100A 1200V 600NS, EA |
|
|
Mfr.#: 2MBI100VA170-50 OMO.#: OMO-2MBI100VA170-50-1190 |
Nuevo y original |