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IPB60R080P7ATMA1

IPB60R080P7ATMA1
Mfr. #:
IPB60R080P7ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB60R080P7ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPB60R080P7ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
37 A
Rds On - Resistencia de la fuente de drenaje:
69 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
51 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
129 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
70 ns
Tiempo típico de retardo de encendido:
15 ns
Parte # Alias:
IPB60R080P7 SP001664898
Tags
IPB60R0, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 80 mOhm 51 nC CoolMOS™ Power Mosfet - D2PAK
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ark
Mosfet, N-Ch, 600V, 37A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descripción Valores Precio
IPB60R080P7ATMA1
DISTI # V72:2272_18787575		Infineon Technologies AGHIGH POWER_NEW1161
  • 1000:$2.6860
  • 500:$3.3980
  • 250:$3.4070
  • 100:$3.7350
  • 25:$3.8760
  • 10:$4.3070
  • 1:$5.5704
IPB60R080P7ATMA1
DISTI # IPB60R080P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1733In Stock
  • 500:$3.4604
  • 100:$4.0650
  • 10:$4.9610
  • 1:$5.5200
IPB60R080P7ATMA1
DISTI # IPB60R080P7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1733In Stock
  • 500:$3.4604
  • 100:$4.0650
  • 10:$4.9610
  • 1:$5.5200
IPB60R080P7ATMA1
DISTI # IPB60R080P7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 2000:$2.6985
  • 1000:$2.8334
IPB60R080P7ATMA1
DISTI # 26413980		Infineon Technologies AGHIGH POWER_NEW1161
  • 1000:$2.6860
  • 500:$3.3980
  • 250:$3.4070
  • 100:$3.7350
  • 25:$3.8760
  • 10:$4.3070
  • 3:$5.5704
IPB60R080P7ATMA1
DISTI # 32684970		Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$3.4933
IPB60R080P7ATMA1
DISTI # IPB60R080P7ATMA1		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPB60R080P7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$2.3900
  • 10000:$2.3900
  • 4000:$2.4900
  • 2000:$2.5900
  • 1000:$2.6900
IPB60R080P7ATMA1
DISTI # 49AC7994		Infineon Technologies AGMOSFET, N-CH, 600V, 37A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:37A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes419
  • 500:$3.2300
  • 250:$3.6000
  • 100:$3.7900
  • 50:$3.9800
  • 25:$4.1800
  • 10:$4.3700
  • 1:$5.1500
IPB60R080P7ATMA1
DISTI # 726-IPB60R080P7ATMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		1613
  • 1:$5.1000
  • 10:$4.3300
  • 100:$3.7500
  • 250:$3.5600
  • 500:$3.2000
  • 1000:$2.6900
  • 2000:$2.5600
IPB60R080P7ATMA1Infineon Technologies AGSingle N-Channel 600 V 80 mOhm 51 nC CoolMOS Power Mosfet - D2PAK
RoHS: Not Compliant		1000Reel
  • 1000:$2.5000
IPB60R080P7ATMA1
DISTI # 2841642		Infineon Technologies AGMOSFET, N-CH, 600V, 37A, TO-263
RoHS: Compliant		399
  • 1000:$3.8600
  • 500:$3.9400
  • 250:$4.1600
  • 100:$4.3900
  • 10:$4.9600
  • 1:$5.3100
IPB60R080P7ATMA1
DISTI # 2841642		Infineon Technologies AGMOSFET, N-CH, 600V, 37A, TO-263424
  • 500:£2.4800
  • 250:£2.7800
  • 100:£2.9200
  • 10:£3.3600
  • 1:£4.4000
IPB60R080P7ATMA1
DISTI # XSFP00000131402		Infineon Technologies AG 
RoHS: Compliant		2000 in Stock0 on Order
  • 2000:$2.7800
  • 1000:$2.9400
Imagen Parte # Descripción
FCB070N65S3

Mfr.#: FCB070N65S3

OMO.#: OMO-FCB070N65S3

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STPSC10H065GY-TR

Mfr.#: STPSC10H065GY-TR

OMO.#: OMO-STPSC10H065GY-TR

 Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
RC0805FR-0710KL

Mfr.#: RC0805FR-0710KL

OMO.#: OMO-RC0805FR-0710KL

 Thick Film Resistors - SMD 10K OHM 1%
RC0805FR-071K62L

Mfr.#: RC0805FR-071K62L

OMO.#: OMO-RC0805FR-071K62L

 Thick Film Resistors - SMD 1.62K OHM 1%
CKG57NC0G2E304J500JJ

Mfr.#: CKG57NC0G2E304J500JJ

OMO.#: OMO-CKG57NC0G2E304J500JJ

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 250V 0.30uF 5% C0G Dbl Stk AEC-Q200
FS12-090-C2

Mfr.#: FS12-090-C2

OMO.#: OMO-FS12-090-C2-TRIAD-MAGNETICS

 Power Transformers [email protected] [email protected] 1.1VA 8pin Class 2
CKG57NC0G2E304J500JJ

Mfr.#: CKG57NC0G2E304J500JJ

OMO.#: OMO-CKG57NC0G2E304J500JJ-TDK

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 250V 0.30uF 5% C0G Dbl Stk AEC-Q200
FCB070N65S3

Mfr.#: FCB070N65S3

OMO.#: OMO-FCB070N65S3-ON-SEMICONDUCTOR

 MOSFET N-CH 650V 44A D2PAK
RC0805FR-0724K9L

Mfr.#: RC0805FR-0724K9L

OMO.#: OMO-RC0805FR-0724K9L-YAGEO

 Thick Film Resistors - SMD 24.9K OHM 1%
RC0805FR-071K62L

Mfr.#: RC0805FR-071K62L

OMO.#: OMO-RC0805FR-071K62L-YAGEO

 Thick Film Resistors - SMD 1.62K OHM 1%
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de IPB60R080P7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,10 US$
5,10 US$
10
4,33 US$
43,30 US$
100
3,75 US$
375,00 US$
250
3,56 US$
890,00 US$
500
3,20 US$
1 600,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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