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TPN2R304PL,L1Q

TPN2R304PL,L1Q
Mfr. #:
TPN2R304PL,L1Q
Fabricante:
Toshiba
Descripción:
MOSFET 40 Volt N-Channel
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TPN2R304PL,L1Q Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TPN2R304PL,L1Q DatasheetTPN2R304PL,L1Q Datasheet (P4-P6)TPN2R304PL,L1Q Datasheet (P7-P9)TPN2R304PL,L1Q Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Toshiba
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TSON-Advance-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
80 A
Rds On - Resistencia de la fuente de drenaje:
4 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1.4 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
41 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
104 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
0.85 mm
Longitud:
3.1 mm
Serie:
TPN2R304PL
Tipo de transistor:
1 N-Channel
Ancho:
3.1 mm
Marca:
Toshiba
Otoño:
12.2 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7.8 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
37 ns
Tiempo típico de retardo de encendido:
17.5 ns
Tags
TPN2R3, TPN2R, TPN2, TPN
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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 40V 100A 8-Pin TSON Advance
***el Electronic
IC BUFFER NON-INVERT SOT5
***i-Key
MOSFET N-CH 40V 80A 8TSON
***
TRANSISTOR PD=140W F=1MHZ
***ure Electronics
Single N-Channel 40 V 2.2 mOhm 37 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
MOSFET, N-CH, 40V, 100A, 150DEG C, 69W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***ineon SCT
OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 40V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 69W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches
***(Formerly Allied Electronics)
IRFR7440PBF N-channel MOSFET Transistor; 90 A; 40 V; 3-Pin DPAK
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS
*** Source Electronics
MOSFET N CH 40V 90A DPAK / Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) DPAK T/R
***ure Electronics
Single N-Channel 40 V 2.4 mOhm 89 nC HEXFET® Power Mosfet - TO-252AA
*** Stop Electro
Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N-CH, 40V, 90A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 140W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***ure Electronics
Single N-Channel 40 V 2.4 mOhm 92 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a Lead Free PQFN 5x6mm package, PG-TDSON-8, RoHS
***ark
T&R / MOSFET, 40V, 85A, 2.4 mOhm, 92 nC Qg, PQFN56
*** Source Electronics
Trans MOSFET N-CH Si 40V 159A 8-Pin QFN EP T/R / MOSFET N-CH 40V 85A 8PQFN
***roFlash
Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***Yang
Trans MOSFET N-CH 40V 85A 8-Pin PQFN T/R 4k - Tape and Reel
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 104 W
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull
***nell
MOSFET, N-CH, 40V, 85A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***ical
Trans MOSFET N-CH 40V 31A Automotive 8-Pin PowerDI EP T/R
***des Inc SCT
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ure Electronics
MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
MOSFET N-CH 40V 31A PWRDI5060-8
***ical
Trans MOSFET N-CH 40V 26A Automotive 8-Pin PowerDI EP T/R
***ark
Mosfet, N-Ch, 40V, 90A, Powerdi 5060 Rohs Compliant: Yes
***des Inc SCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***et
MOSFET BVDSS: 31V~40V POWERDI5060-8 T&R 2.5K
***ark
Mosfet, N-Ch, 40V, 100A, Powerdi 5060 Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 40V 31A 8-Pin PowerDI EP T/R
***des Inc SCT
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ure Electronics
MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K
Parte # Mfg. Descripción Valores Precio
TPN2R304PL,L1Q
DISTI # TPN2R304PLL1QCT-ND		Toshiba America Electronic ComponentsMOSFET N-CH 40V 80A TSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		19990In Stock
  • 1000:$0.3280
  • 500:$0.4099
  • 100:$0.5534
  • 10:$0.7170
  • 1:$0.8200
TPN2R304PL,L1Q
DISTI # TPN2R304PLL1QDKR-ND		Toshiba America Electronic ComponentsMOSFET N-CH 40V 80A TSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		19990In Stock
  • 1000:$0.3280
  • 500:$0.4099
  • 100:$0.5534
  • 10:$0.7170
  • 1:$0.8200
TPN2R304PL,L1Q
DISTI # TPN2R304PLL1QTR-ND		Toshiba America Electronic ComponentsMOSFET N-CH 40V 80A TSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		15000In Stock
  • 5000:$0.2786
TPN2R304PLL1Q
DISTI # TPN2R304PL,L1Q		Toshiba America Electronic ComponentsPb-F POWER MOSFET TRANSISTOR TSON-ADV PD=140W F=1MHZ - Tape and Reel (Alt: TPN2R304PL,L1Q)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3109
  • 10000:$0.2929
  • 20000:$0.2759
  • 30000:$0.2619
  • 50000:$0.2549
TPN2R304PLL1Q(M
DISTI # TPN2R304PL,L1Q(M		Toshiba America Electronic ComponentsTrans MOSFET N 40V 80A 8-Pin TSON (Alt: TPN2R304PL,L1Q(M)
RoHS: Compliant
Min Qty: 5000		Asia - 0
    TPN2R304PL,L1Q
    DISTI # 757-TPN2R304PLL1Q    		Toshiba America Electronic ComponentsMOSFET 40 Volt N-Channel
    RoHS: Compliant    		94020
    • 1:$0.9100
    • 10:$0.7100
    • 100:$0.4580
    • 1000:$0.3670
    • 5000:$0.3090
    • 10000:$0.2710
    • 25000:$0.2590
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    Disponibilidad
    Valores:
    Available
    En orden:
    1988
    Ingrese la cantidad:
    El precio actual de TPN2R304PL,L1Q es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,91 US$
    0,91 US$
    10
    0,80 US$
    7,97 US$
    100
    0,46 US$
    45,50 US$
    1000
    0,33 US$
    330,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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