HP8MA2TB1

HP8MA2TB1
Mfr. #:
HP8MA2TB1
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET, N& P-CH, 30V, HSOP, Transistor Polarity:N and P Channel, Continuous Drain Current Id:18A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0075ohm, Rds(on) Test Voltage Vgs:10V,
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HP8MA2TB1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
HP8MA2TB1 más información
Atributo del producto
Valor de atributo
Tags
HP8M, HP8
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array N-CH/P-CH 30V ±18A/±15A 8-Pin HSOP Emboss T/R
***i-Key
HP8MA2 IS LOW ON-RESISTANCE AND
***ark
Mosfet, N& P-Ch, 30V, Hsop; Transistor Polarity:n And P Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0075Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Parte # Mfg. Descripción Valores Precio
HP8MA2TB1
DISTI # 10AC7464
ROHM SemiconductorMOSFET, N& P-CH, 30V, HSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes2383
  • 1:$1.1100
  • 10:$0.9040
  • 25:$0.7990
  • 50:$0.7120
  • 100:$0.6100
  • 250:$0.5360
  • 500:$0.4230
  • 1000:$0.4070
HP8MA2TB1ROHM Semiconductor 2401
    HP8MA2TB1
    DISTI # 2706747
    ROHM SemiconductorMOSFET, N& P-CH, 30V, HSOP
    RoHS: Compliant
    2378
    • 1:$1.2900
    • 10:$1.1200
    • 100:$0.9140
    • 250:$0.7720
    • 500:$0.6680
    • 1000:$0.6320
    HP8MA2TB1ROHM SemiconductorRoHS(ship within 1day)1887
    • 1:$1.6600
    • 10:$1.2500
    • 50:$1.0400
    • 100:$0.8300
    • 500:$0.7100
    • 1000:$0.6700
    HP8MA2TB1
    DISTI # 2706747
    ROHM SemiconductorMOSFET, N& P-CH, 30V, HSOP
    RoHS: Compliant
    2388
    • 5:£0.8110
    • 25:£0.7440
    • 100:£0.5200
    Imagen Parte # Descripción
    HP8MA2TB1

    Mfr.#: HP8MA2TB1

    OMO.#: OMO-HP8MA2TB1

    MOSFET 30V NCH+PCH MIDDLE POWER
    HP8M51TB1

    Mfr.#: HP8M51TB1

    OMO.#: OMO-HP8M51TB1

    MOSFET 100V NCH+PCH POWER
    HP8M31TB1

    Mfr.#: HP8M31TB1

    OMO.#: OMO-HP8M31TB1

    MOSFET 60V NCH+PCH POWER
    HP8M31 , 2SB1545

    Mfr.#: HP8M31 , 2SB1545

    OMO.#: OMO-HP8M31-2SB1545-1190

    Nuevo y original
    HP8M51TB1

    Mfr.#: HP8M51TB1

    OMO.#: OMO-HP8M51TB1-1190

    HP8M51TB1 IS LOW ON-RESISTANCE A
    HP8MA2-TB1

    Mfr.#: HP8MA2-TB1

    OMO.#: OMO-HP8MA2-TB1-1190

    Nuevo y original
    HP8MA2TB1

    Mfr.#: HP8MA2TB1

    OMO.#: OMO-HP8MA2TB1-1190

    MOSFET, N& P-CH, 30V, HSOP, Transistor Polarity:N and P Channel, Continuous Drain Current Id:18A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0075ohm, Rds(on) Test Voltage Vgs:10V,
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de HP8MA2TB1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,61 US$
    0,61 US$
    10
    0,58 US$
    5,80 US$
    100
    0,55 US$
    54,95 US$
    500
    0,52 US$
    259,45 US$
    1000
    0,49 US$
    488,40 US$
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