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IRFP4668PBF
IRFP4668PBF
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IRFP4668PBF

Mfr. #:
IRFP4668PBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 200V 130A TO-247AC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFP4668PBF Ficha de datos
ECAD Model:

Disponibilidad

Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de IRFP4668PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Cantidad
Precio unitario
Ext. Precio
1
3,85 US$
3,85 US$
10
3,66 US$
36,58 US$
100
3,47 US$
346,59 US$
500
3,27 US$
1 636,65 US$
1000
3,08 US$
3 080,80 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
Chips de IC
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
520 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
74 ns
Hora de levantarse
105 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
130 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Resistencia a la fuente de desagüe de Rds
9.7 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
64 ns
Tiempo de retardo de encendido típico
41 ns
Qg-Gate-Charge
161 nC
Transconductancia directa-Mín.
150 S
Modo de canal
Mejora
Tags
IRFP466, IRFP46, IRFP4, IRFP, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRFP4668PBF N-channel MOSFET Transistor, 130 A, 200 V, 3-Pin TO-247AC
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-247 Power dissipation: 520 W
***ure Electronics
Single N-Channel 200 V 9.7 mOhm 161 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***p One Stop Japan
Trans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube
***ment14 APAC
MOSFET, 200V 130A TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:200V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:520W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130A; Package / Case:TO-247AC; Power Dissipation Pd:520W; Pulse Current Idm:520A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descripción Valores Precio
IRFP4668PBF
DISTI # V36:1790_13892373		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube46
  • 1:$3.6690
IRFP4668PBF
DISTI # V99:2348_13892373		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube22
  • 10000:$2.9190
  • 4000:$3.2430
  • 2000:$3.6040
  • 400:$3.6690
IRFP4668PBF
DISTI # IRFP4668PBF-ND		Infineon Technologies AGMOSFET N-CH 200V 130A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		74403In Stock
  • 1000:$3.1659
  • 500:$3.6893
  • 100:$4.4744
  • 25:$4.8768
  • 1:$5.9900
IRFP4668PBF
DISTI # 23457958		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube2444
  • 4:$3.1559
IRFP4668PBF
DISTI # 30716601		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube46
  • 3:$3.6690
IRFP4668PBF
DISTI # 26198371		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube22
  • 3:$3.6690
IRFP4668PBF
DISTI # IRFP4668PBF		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC (Alt: IRFP4668PBF)
RoHS: Compliant
Min Qty: 400		Asia - 1575
  • 400:$3.0074
  • 800:$2.8838
  • 1200:$2.8449
  • 2000:$2.7340
  • 4000:$2.6990
  • 10000:$2.6315
  • 20000:$2.5673
IRFP4668PBF
DISTI # IRFP4668PBF		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP4668PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 302
  • 1:$3.1900
  • 10:$3.0900
  • 25:$3.0900
  • 50:$2.9900
  • 100:$2.8900
  • 500:$2.7900
  • 1000:$2.7900
IRFP4668PBF
DISTI # 19P2518		Infineon Technologies AGN CHANNEL MOSFET, 200V, 130A, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:130A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:30V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes113
  • 1:$7.2400
  • 10:$6.5300
  • 25:$6.2400
  • 50:$5.8300
  • 100:$5.4100
  • 250:$5.1700
IRFP4668PBF.
DISTI # 26AC0529		Infineon Technologies AGTRENCH_MOSFETS ROHS COMPLIANT: YES0
  • 1:$7.3800
  • 10:$6.6600
  • 25:$6.2400
  • 50:$5.8300
  • 100:$5.4100
  • 250:$5.1700
IRFP4668PBF
DISTI # 70017926		Infineon Technologies AGMOSFET,N Ch.,200V,130A,9.7 MOHM,161 NC QG,TO-247AC,Pb-Free
RoHS: Compliant		69
  • 1:$10.2290
  • 10:$9.0250
  • 100:$7.8680
  • 500:$6.8190
  • 1000:$6.0170
IRFP4668PBF
DISTI # 942-IRFP4668PBF		Infineon Technologies AGMOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg
RoHS: Compliant		4000
  • 1:$6.5800
  • 10:$5.9400
  • 25:$5.6700
  • 100:$4.9200
  • 250:$4.7000
IRFP4668PBFInfineon Technologies AGSingle N-Channel 200 V 9.7 mOhm 161 nC HEXFET Power Mosfet - TO-247AC
RoHS: Compliant		413Tube
  • 5:$4.2100
  • 50:$3.6500
  • 200:$3.2100
IRFP4668PBFInternational Rectifier130A, 200V, 0.0097OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AC4
  • 2:$5.0000
  • 1:$7.5000
IRFP4668PBF
DISTI # 6887027		Infineon Technologies AGMOSFET N-CH 200V 130A HEXFET TO247AC, EA388
  • 1:£4.8400
  • 13:£4.3600
IRFP4668PBF
DISTI # 6887027P		Infineon Technologies AGMOSFET N-CH 200V 130A HEXFET TO247AC, TU1575
  • 13:£4.3600
IRFP4668PBF
DISTI # 1249022		Infineon Technologies AGMOSFET N-CH 200V 130A HEXFET TO247AC, TU200
  • 25:£3.8100
  • 125:£3.2340
  • 250:£3.0970
IRFP4668PBFInternational Rectifier 307
    IRFP4668PBF
    DISTI # IRFP4668PBF    		Infineon Technologies AGN-Ch 200V 130A 520W 0,0097R TO247AC
    RoHS: Compliant    		240
    • 5:€4.6100
    • 25:€4.0100
    • 100:€3.8100
    • 200:€3.6700
    IRFP4668PBFInfineon Technologies AG 162
      IRFP4668PBFInfineon Technologies AG200V,9.7m,130A,N-Channel Power MOSFET125
      • 1:$5.8000
      • 100:$4.8400
      • 500:$4.2700
      • 1000:$4.1500
      IRFP4668PBF
      DISTI # 1684526      		Infineon Technologies AGMOSFET, 200V 130ATO-247AC
      RoHS: Compliant      		0
      • 1:£4.8400
      • 5:£4.5200
      • 10:£3.6300
      • 50:£3.4300
      • 100:£3.2300
      IRFP4668PBF
      DISTI # XSFP00000147587      		Infineon Technologies AGPower Field-Effect Transistor, 60A I(D),250V,0.033ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		1590
      • 25:$8.4200
      • 1590:$7.6500
      IRFP4668PBF
      DISTI # C1S322000600128      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		22
      • 400:$3.9010
      IRFP4668PBF
      DISTI # C1S327400142937      		Infineon Technologies AGTrans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC Tube
      RoHS: Compliant      		1506
      • 500:$4.3500
      • 250:$4.7600
      • 100:$5.0200
      • 50:$5.7900
      • 10:$6.1200
      • 1:$6.7800
      IRFP4668PBF
      DISTI # C1S322000515343      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		2446
      • 200:$4.3200
      • 100:$5.2100
      • 50:$5.6400
      • 25:$6.1400
      • 10:$6.2800
      • 1:$9.2200
      IRFP4668PBF
      DISTI # 1684526      		Infineon Technologies AGMOSFET, 200V 130ATO-247AC
      RoHS: Compliant      		157
      • 1:$8.9900
      • 25:$7.2200
      • 100:$6.5800
      • 500:$6.1700
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