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STB32N65M5

STB32N65M5
Mfr. #:
STB32N65M5
Fabricante:
STMicroelectronics
Descripción:
MOSFET POWER MOSFET N-CH 650V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STB32N65M5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STB32N65M5 más información STB32N65M5 Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
24 A
Rds On - Resistencia de la fuente de drenaje:
95 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
25 V
Qg - Carga de puerta:
72 nC
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
150 W
Configuración:
Único
Nombre comercial:
MDmesh
Embalaje:
Carrete
Serie:
STB32N65M5
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET de potencia
Marca:
STMicroelectronics
Otoño:
16 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
56 ns
Tiempo típico de retardo de encendido:
53 ns
Unidad de peso:
0.139332 oz
Tags
STB32, STB3, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK STMicroelectronics STB32N65M5
***ure Electronics
N-Channel 650 V 24 A 119 mOhm 150 W Surface Mount MDmesh Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 650V 24A 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R
***ied Electronics & Automation
MOSFET N-Channel 650V 24A D2PAK
***ronik
MOSFET 650V 120mOhm 24A TO263 RoHSconf
***i-Key
MOSFET N-CH 650V 24A D2PAK
***ark
MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, CANALE N, 650V, 24A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:24A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.095ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:150W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
N-channel MDmesh V Power MOSFET
STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products offering greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules. 
Parte # Mfg. Descripción Valores Precio
STB32N65M5
DISTI # 497-10564-1-ND		STMicroelectronicsMOSFET N-CH 650V 24A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		526In Stock
  • 500:$6.0851
  • 100:$7.2628
  • 10:$8.8330
  • 1:$9.8100
STB32N65M5
DISTI # 497-10564-6-ND		STMicroelectronicsMOSFET N-CH 650V 24A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		526In Stock
  • 500:$6.0851
  • 100:$7.2628
  • 10:$8.8330
  • 1:$9.8100
STB32N65M5
DISTI # 497-10564-2-ND		STMicroelectronicsMOSFET N-CH 650V 24A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$5.1455
STB32N65M5
DISTI # STB32N65M5		STMicroelectronicsTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB32N65M5)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$5.0900
  • 2000:$4.8900
  • 4000:$4.6900
  • 6000:$4.4900
  • 10000:$4.3900
STB32N65M5
DISTI # 511-STB32N65M5		STMicroelectronicsMOSFET POWER MOSFET N-CH 650V
RoHS: Compliant		1092
  • 1:$8.2500
  • 10:$7.4600
  • 25:$7.1100
  • 100:$6.1700
  • 250:$5.9000
  • 500:$5.3800
  • 1000:$4.6800
STB32N65M5
DISTI # 7610676P		STMicroelectronicsMOSFET N-CHANNEL 650V 24A D2PAK, RL710
  • 10:£2.7000
STB32N65M5ST Microwave CorporationPower Field-Effect Transistor, 24A I(D), 650V, 0.119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		Europe - 1400
    STB32N65M5
    DISTI # 2098135    		STMicroelectronicsMOSFET, N CH, 650V, 24A, D2PAK
    RoHS: Compliant    		549
    • 1:£6.0900
    • 5:£5.0500
    • 10:£4.5300
    • 50:£4.1800
    • 100:£3.9000
    STB32N65M5
    DISTI # 2098135    		STMicroelectronicsMOSFET, N CH, 650V, 24A, D2PAK
    RoHS: Compliant    		546
    • 1:$13.0600
    • 10:$11.8100
    • 25:$11.2500
    • 100:$9.7700
    • 250:$9.3400
    • 500:$8.5200
    • 1000:$7.4100
    • 2000:$7.1400
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    Disponibilidad
    Valores:
    976
    En orden:
    2959
    Ingrese la cantidad:
    El precio actual de STB32N65M5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    8,25 US$
    8,25 US$
    10
    7,46 US$
    74,60 US$
    25
    7,11 US$
    177,75 US$
    100
    6,17 US$
    617,00 US$
    250
    5,90 US$
    1 475,00 US$
    500
    5,38 US$
    2 690,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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