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NSBA123JDXV6T5G

NSBA123JDXV6T5G
Mfr. #:
NSBA123JDXV6T5G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NSBA123JDXV6T5G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBA123JDXV6T5G DatasheetNSBA123JDXV6T5G Datasheet (P4-P6)NSBA123JDXV6T5G Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - Pre-polarizados
RoHS:
Y
Configuración:
Doble
Polaridad del transistor:
PNP
Resistencia de entrada típica:
2.2 kOhms
Relación de resistencia típica:
0.047
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-563-6
Colector de CC / Ganancia base hfe Min:
80
Voltaje colector-emisor VCEO Max:
50 V
Corriente continua del colector:
- 0.1 A
Corriente máxima del colector de CC:
100 mA
Pd - Disipación de energía:
357 mW
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
NSBA123JDXV6
Embalaje:
Carrete
Ganancia de corriente CC hFE Max:
80
Altura:
0.55 mm
Longitud:
1.6 mm
Ancho:
1.2 mm
Marca:
EN Semiconductor
Tipo de producto:
BJTs - Transistores bipolares - Pre-polarizados
Cantidad de paquete de fábrica:
8000
Subcategoría:
Transistores
Unidad de peso:
0.000106 oz
Tags
NSBA123JDX, NSBA123JD, NSBA123J, NSBA123, NSBA12, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***ical
Trans Digital BJT PNP 50V 100mA 500mW 6-Pin SOT-563 T/R
***emi
Dual PNP Bipolar Digital Transistor (BRT)
***ark
Brt Transistor, 50V, 2.2K/47Kohm, Sot563; Digital Transistor Polarity:dual Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:2.2Kohm; Base-Emitter Resistor R2:47Kohm Rohs Compliant: Yes
Parte # Mfg. Descripción Valores Precio
NSBA123JDXV6T5G
DISTI # NSBA123JDXV6T5GOS-ND		ON SemiconductorTRANS 2PNP PREBIAS 0.5W SOT563
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 8000:$0.0696
NSBA123JDXV6T5G
DISTI # NSBA123JDXV6T5G		ON SemiconductorTrans Digital BJT PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSBA123JDXV6T5G)
RoHS: Compliant
Min Qty: 16000
Container: Reel		Americas - 0
  • 16000:$0.0418
  • 32000:$0.0416
  • 48000:$0.0410
  • 80000:$0.0405
  • 160000:$0.0395
NSBA123JDXV6T5G
DISTI # 42K2306		ON SemiconductorBRT TRANSISTOR, 50V, 47K/2.2KOHM, SOT563, FULL REEL,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:47kohm,Resistor Ratio, R1 / R2:0.047(Ratio)RoHS Compliant: Yes0
  • 1:$0.0740
NSBA123JDXV6T5G
DISTI # 49X8925		ON SemiconductorBRT TRANSISTOR, 50V, 2.2K/47KOHM, SOT563,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:2.2kohm,Base-Emitter Resistor R2:47kohm,Resistor Ratio, R1 / R2:0.047(Ratio) RoHS Compliant: Yes0
  • 1:$0.3840
  • 50:$0.2950
  • 100:$0.2010
  • 250:$0.1670
  • 500:$0.1400
  • 1000:$0.1120
  • 2500:$0.0940
  • 5000:$0.0780
NSBA123JDXV6T5G
DISTI # 863-NSBA123JDXV6T5G		ON SemiconductorBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
RoHS: Compliant		0
  • 1:$0.4200
  • 10:$0.2660
  • 100:$0.1140
  • 1000:$0.0880
  • 2500:$0.0670
  • 8000:$0.0590
  • 24000:$0.0560
  • 48000:$0.0490
  • 96000:$0.0480
NSBA123JDXV6T5GON Semiconductor 
RoHS: Not Compliant		83400
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
Imagen Parte # Descripción
NSBA123TDP6T5G

Mfr.#: NSBA123TDP6T5G

OMO.#: OMO-NSBA123TDP6T5G

 Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA123TF3T5G

Mfr.#: NSBA123TF3T5G

OMO.#: OMO-NSBA123TF3T5G

 Bipolar Transistors - Pre-Biased SOT-1123 PBRT TRANSISTOR
NSBA123JDXV6T1G

Mfr.#: NSBA123JDXV6T1G

OMO.#: OMO-NSBA123JDXV6T1G

 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA123EDXV6T1

Mfr.#: NSBA123EDXV6T1

OMO.#: OMO-NSBA123EDXV6T1

 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA123EDXV6T1G

Mfr.#: NSBA123EDXV6T1G

OMO.#: OMO-NSBA123EDXV6T1G-ON-SEMICONDUCTOR

 TRANS 2PNP PREBIAS 0.5W SOT563
NSBA123JDXV6T1

Mfr.#: NSBA123JDXV6T1

OMO.#: OMO-NSBA123JDXV6T1-ON-SEMICONDUCTOR

 TRANS 2PNP PREBIAS 0.5W SOT563
NSBA123TDP6T5G

Mfr.#: NSBA123TDP6T5G

OMO.#: OMO-NSBA123TDP6T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA123JDP6T5G

Mfr.#: NSBA123JDP6T5G

OMO.#: OMO-NSBA123JDP6T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA123JDXV6T5G

Mfr.#: NSBA123JDXV6T5G

OMO.#: OMO-NSBA123JDXV6T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA123EF3T5G

Mfr.#: NSBA123EF3T5G

OMO.#: OMO-NSBA123EF3T5G-ON-SEMICONDUCTOR

 Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B
Disponibilidad
Valores:
16
En orden:
1999
Ingrese la cantidad:
El precio actual de NSBA123JDXV6T5G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,41 US$
0,41 US$
10
0,27 US$
2,66 US$
100
0,11 US$
11,40 US$
1000
0,09 US$
88,00 US$
2500
0,07 US$
167,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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