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SIE882DF-T1-GE3

SIE882DF-T1-GE3
Mfr. #:
SIE882DF-T1-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 25V 229A 125W 1.4mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIE882DF-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SIE882DF-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
TrenchFET
embalaje
Carrete
Alias ​​de parte
SIE882DF-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
PolarPAK-10
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
125 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
229 A
Vds-Drain-Source-Breakdown-Voltage
25 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Resistencia a la fuente de desagüe de Rds
1.4 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
46 nC
Transconductancia directa-Mín.
125 S
Tags
SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 25V 47A 10-Pin PolarPAK T/R
***i-Key
MOSFET N-CH 25V 60A 10POLARPAK
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:60A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0014ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Parte # Mfg. Descripción Valores Precio
SIE882DF-T1-GE3
DISTI # SIE882DF-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 25V 60A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$1.2028
SIE882DF-T1-GE3
DISTI # SIE882DF-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 25V 47A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE882DF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.0900
  • 6000:$1.0900
  • 12000:$1.0900
  • 18000:$1.0900
  • 30000:$1.0900
SIE882DF-T1-GE3
DISTI # 781-SIE882DF-GE3		Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PolarPAK
RoHS: Compliant		0
  • 1:$2.5200
  • 10:$2.1000
  • 100:$1.6200
  • 500:$1.4200
  • 1000:$1.3600
  • 3000:$1.3500
SIE882DF-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PolarPAK
RoHS: Compliant		Americas - 3000
  • 3000:$1.1210
  • 6000:$1.0590
  • 12000:$1.0270
  • 24000:$1.0110
Imagen Parte # Descripción
SIE882DF-T1-GE3

Mfr.#: SIE882DF-T1-GE3

OMO.#: OMO-SIE882DF-T1-GE3

 MOSFET 25V Vds 20V Vgs PolarPAK
SIE882DF-T1-GE3

Mfr.#: SIE882DF-T1-GE3

OMO.#: OMO-SIE882DF-T1-GE3-VISHAY

 RF Bipolar Transistors MOSFET 25V 229A 125W 1.4mohm @ 10V
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de SIE882DF-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,52 US$
1,52 US$
10
1,44 US$
14,41 US$
100
1,36 US$
136,49 US$
500
1,29 US$
644,50 US$
1000
1,21 US$
1 213,20 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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