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SI7456CDP-T1-GE3

SI7456CDP-T1-GE3
Mfr. #:
SI7456CDP-T1-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 100V 27.5A 35.7W
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7456CDP-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET
Paquete-Estuche
SO-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
35.7 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
27.5 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
31.5 mOhms
Polaridad del transistor
Canal N
Tags
SI7456, SI745, SI74, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 100V 27.5A PPAK SO-8
***
100V, 25 MOHMS@10V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0195Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:5W; No. Of Pins:8Pins Rohs Compliant: Yes
***nell
MOSFET,N CH,DIODE,100V,27.5A,SO8PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:19500µohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Current Id Max:10.3A; Power Dissipation:5W
***ment14 APAC
MOSFET,N CH,DIODE,100V,27.5A,SO8PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):19500µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.3A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
Parte # Mfg. Descripción Valores Precio
SI7456CDP-T1-GE3
DISTI # SI7456CDP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 27.5A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.8019
SI7456CDP-T1-GE3
DISTI # SI7456CDP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 27.5A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.8871
  • 500:$1.0707
  • 100:$1.3766
  • 10:$1.7130
  • 1:$1.9000
SI7456CDP-T1-GE3
DISTI # SI7456CDP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 27.5A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.8871
  • 500:$1.0707
  • 100:$1.3766
  • 10:$1.7130
  • 1:$1.9000
SI7456CDP-T1-GE3
DISTI # SI7456CDP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7456CDP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.7859
  • 6000:$0.7619
  • 12000:$0.7309
  • 18000:$0.7109
  • 30000:$0.6919
SI7456CDP-T1-GE3
DISTI # 86R3925		Vishay IntertechnologiesMOSFET Transistor, N Channel, 27.5 A, 100 V, 19500 ohm, 10 V, 1.2 V0
  • 1:$0.7890
  • 3000:$0.7830
  • 6000:$0.7460
SI7456CDP-T1-GE3.
DISTI # 30AC0199		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$0.7890
  • 3000:$0.7830
  • 6000:$0.7460
SI7456CDP-T1-GE3
DISTI # 78-SI7456CDP-T1-GE3		Vishay IntertechnologiesMOSFET 100V 27.5A 35.7W
RoHS: Compliant		0
  • 1:$1.6800
  • 10:$1.4000
  • 100:$1.0800
  • 500:$0.9460
  • 1000:$0.9010
  • 3000:$0.9000
SI7456CDP-T1-GE3Vishay IntertechnologiesMOSFET 100V 27.5A 35.7WAmericas -
    Imagen Parte # Descripción
    SI7456CDP-T1-GE3

    Mfr.#: SI7456CDP-T1-GE3

    OMO.#: OMO-SI7456CDP-T1-GE3

    		 MOSFET 100V 27.5A 35.7W
    SI7456CDP-T1-GE3

    Mfr.#: SI7456CDP-T1-GE3

    OMO.#: OMO-SI7456CDP-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 100V 27.5A 35.7W
    SI7456CDP-T1-E3

    Mfr.#: SI7456CDP-T1-E3

    OMO.#: OMO-SI7456CDP-T1-E3-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    2500
    Ingrese la cantidad:
    El precio actual de SI7456CDP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,26 US$
    1,26 US$
    10
    1,19 US$
    11,95 US$
    100
    1,13 US$
    113,18 US$
    500
    1,07 US$
    534,45 US$
    1000
    1,01 US$
    1 006,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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