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IRFH7004TRPBF

IRFH7004TRPBF
Mfr. #:
IRFH7004TRPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 40V 100A 1.4mOhm HEXFET 156W 134nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFH7004TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH7004TRPBF DatasheetIRFH7004TRPBF Datasheet (P4-P6)IRFH7004TRPBF Datasheet (P7-P9)IRFH7004TRPBF Datasheet (P10-P11)
ECAD Model:
Más información:
IRFH7004TRPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PQFN-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
259 A
Rds On - Resistencia de la fuente de drenaje:
1.1 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Qg - Carga de puerta:
129 nC
Pd - Disipación de energía:
156 W
Configuración:
Único
Nombre comercial:
Fuerte IRFET
Embalaje:
Carrete
Altura:
0.83 mm
Longitud:
6 mm
Tipo de transistor:
1 N-Channel
Ancho:
5 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
117 S
Otoño:
49 ns
Tipo de producto:
MOSFET
Hora de levantarse:
51 ns
Cantidad de paquete de fábrica:
4000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
73 ns
Tiempo típico de retardo de encendido:
15 ns
Parte # Alias:
SP001570954
Unidad de peso:
0.001164 oz
Tags
IRFH7004TRP, IRFH7004T, IRFH700, IRFH70, IRFH7, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***ure Electronics
Single N-Channel 40 V 1.4 mOhm 129 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***Yang
Trans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R - Tape and Reel
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 156 W
***nell
MOSFET, N-CH, 40V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Push-Pull
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***ure Electronics
Single N-Channel 40 V 2.6 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***(Formerly Allied Electronics)
MOSFET, N-Channel, 40V, 100A, 2.6 mOhm,73 nC Qg, PQFN
***Yang
Trans MOSFET N-CH 40V 28A 8-Pin QFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***ernational Rectifier
40V Single N-Channel HEXFET Power MOSFET in a PQFN package
***et Europe
Trans MOSFET N-CH 40V 24A 8-Pin PQFN T/R
***ment14 APAC
MOSFET,N CH,40V,24A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:3.6W; Voltage Vgs Max:20V
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 16 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***Yang
Trans MOSFET N-CH 30V 22A 8-Pin PQFN T/R - Tape and Reel
***nell
MOSFET, N-CH, 30V, 79A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 79A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 46W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 79 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.5 / Gate-Source Voltage V = 20 / Fall Time ns = 6.6 / Rise Time ns = 25 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 46
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Parte # Mfg. Descripción Valores Precio
IRFH7004TRPBF
DISTI # V72:2272_13889917		Infineon Technologies AGTrans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R4000
  • 3000:$0.6417
  • 1000:$0.7130
  • 500:$0.8398
  • 250:$0.9482
  • 100:$0.9587
  • 25:$1.1505
  • 10:$1.1641
  • 1:$1.3243
IRFH7004TRPBF
DISTI # IRFH7004TRPBFTR-ND		Infineon Technologies AGMOSFET N CH 40V 100A PQFN 5X6
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.8261
IRFH7004TRPBF
DISTI # IRFH7004TRPBFCT-ND		Infineon Technologies AGMOSFET N CH 40V 100A PQFN 5X6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.9139
  • 500:$1.1030
  • 100:$1.4182
  • 10:$1.7650
  • 1:$1.9500
IRFH7004TRPBF
DISTI # IRFH7004TRPBFDKR-ND		Infineon Technologies AGMOSFET N CH 40V 100A PQFN 5X6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.9139
  • 500:$1.1030
  • 100:$1.4182
  • 10:$1.7650
  • 1:$1.9500
IRFH7004TRPBF
DISTI # 30726613		Infineon Technologies AGTrans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R8000
  • 4000:$0.6171
IRFH7004TRPBF
DISTI # 30737916		Infineon Technologies AGTrans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R4000
  • 3000:$0.6417
  • 1000:$0.7130
  • 500:$0.8398
  • 250:$0.9482
  • 100:$0.9587
  • 25:$1.1505
  • 11:$1.1641
IRFH7004TRPBF
DISTI # 26295223		Infineon Technologies AGTrans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R3792
  • 2500:$0.6680
  • 1000:$0.6876
  • 500:$0.7085
  • 250:$0.7306
  • 100:$0.7542
  • 16:$0.7793
IRFH7004TRPBF
DISTI # IRFH7004TRPBF		Infineon Technologies AGTrans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R (Alt: IRFH7004TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 20000
  • 4000:$0.5490
  • 8000:$0.5264
  • 12000:$0.5193
  • 20000:$0.4991
  • 40000:$0.4927
  • 100000:$0.4804
  • 200000:$0.4687
IRFH7004TRPBF
DISTI # IRFH7004TRPBF		Infineon Technologies AGTrans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH7004TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.6409
  • 8000:$0.6179
  • 16000:$0.5949
  • 24000:$0.5749
  • 40000:$0.5649
IRFH7004TRPBF
DISTI # IRFH7004TRPBF		Infineon Technologies AGTrans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R (Alt: IRFH7004TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€1.1999
  • 8000:€0.9359
  • 16000:€0.8359
  • 24000:€0.7609
  • 40000:€0.7129
IRFH7004TRPBF
DISTI # SP001570954		Infineon Technologies AGTrans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R (Alt: SP001570954)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€1.0989
  • 8000:€0.8579
  • 16000:€0.7659
  • 24000:€0.6969
  • 40000:€0.6529
IRFH7004TRPBF
DISTI # 55W4108		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 40 V, 0.0011 ohm, 10 V, 3 V RoHS Compliant: Yes3635
  • 1:$1.6400
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9740
  • 1000:$0.8070
IRFH7004TRPBF.
DISTI # 29AC7044		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:156W,No. of Pins:5Pins RoHS Compliant: Yes0
    IRFH7004TRPBF
    DISTI # 70394764    		Infineon Technologies AGIRFH7004TRPBF N-channel MOSFET Transistor,100 A,40 V,8-Pin PQFN
    RoHS: Compliant    		0
    • 4000:$2.2050
    IRFH7004TRPBF
    DISTI # 942-IRFH7004TRPBF    		Infineon Technologies AGMOSFET 40V 100A 1.4mOhm HEXFET 156W 134nC
    RoHS: Compliant    		215
    • 1:$1.6400
    • 10:$1.4000
    • 100:$1.1200
    • 500:$0.9740
    • 1000:$0.8070
    • 4000:$0.7240
    • 8000:$0.6960
    IRFH7004TRPBFInfineon Technologies AGSingle N-Channel 40 V 1.4 mOhm 129 nC HEXFET Power Mosfet - PQFN 5 x 6 mm
    RoHS: Compliant    		50Cut Tape/Mini-Reel
    • 1:$0.8950
    • 100:$0.7950
    • 250:$0.7800
    • 500:$0.7650
    • 1500:$0.7300
    IRFH7004TRPBF
    DISTI # 7769157P    		Infineon Technologies AGSTRONGIRFETMOSFET N-CH 40V 100A PQFN8EP, RL3965
    • 40:£0.8900
    • 200:£0.7900
    • 1000:£0.6000
    • 2000:£0.5800
    IRFH7004TRPBF
    DISTI # 2253782    		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, PQFN
    RoHS: Compliant    		3630
    • 5:£1.1800
    • 25:£0.9080
    • 100:£0.8060
    • 250:£0.7790
    • 500:£0.7520
    IRFH7004TRPBF
    DISTI # 2253782    		Infineon Technologies AGMOSFET, N-CH, 40V, 100A, PQFN
    RoHS: Compliant    		3635
    • 1:$2.6000
    • 10:$2.2200
    • 100:$1.7800
    • 500:$1.5500
    • 1000:$1.2900
    • 4000:$1.2900
    IRFH7004TRPBF
    DISTI # C1S322000571172    		Infineon Technologies AGTrans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R
    RoHS: Compliant    		8000
    • 4000:$0.7780
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    Disponibilidad
    Valores:
    Available
    En orden:
    1991
    Ingrese la cantidad:
    El precio actual de IRFH7004TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,52 US$
    1,52 US$
    10
    1,29 US$
    12,90 US$
    100
    1,03 US$
    103,00 US$
    500
    0,91 US$
    454,00 US$
    1000
    0,75 US$
    753,00 US$
    2000
    0,70 US$
    1 402,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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