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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP297L6327HTSA1 DISTI # BSP297L6327HTSA1 | Infineon Technologies AG | MOSFET N-CH 200V 660MA SOT-223 - Bulk (Alt: BSP297L6327HTSA1) Min Qty: 1137 Container: Bulk | Americas - 0 |
|
| BSP297 L6327 DISTI # 726-BSP297L6327 | Infineon Technologies AG | MOSFET N-Ch 200V 660mA SOT-223-3 RoHS: Compliant | 0 | |
| BSP297L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 60127 |
|
| BSP297L6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 273290 |
|
| BSP297L6327 | Infineon Technologies AG | 141 | ||
| BSP297 L6327 | Infineon Technologies AG | 1199 | ||
| BSP297L6327 DISTI # 1562500 | Infineon Technologies AG | RoHS: Compliant | 0 |
|
| BSP297L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 1800 |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSP297H6327 OMO.#: OMO-BSP297H6327-1190 |
200V,0.66A,N-Ch Small-Signal MOSFET |
|
|
Mfr.#: BSP297 , TEA1791T/N1 , B |
Nuevo y original |
|
Mfr.#: BSP297 E6327 |
MOSFET N-CH 200V 660MA SOT-223 |
|
|
Mfr.#: BSP297 L6327 OMO.#: OMO-BSP297-L6327-1190 |
MOSFET N-Ch 200V 660mA SOT-223-3 |
|
|
Mfr.#: BSP297E6327 OMO.#: OMO-BSP297E6327-1190 |
0.66 A, 200 V, 1.8 OHM, N-CHANNEL, SI, POWER, MOSFET |
|
|
Mfr.#: BSP297H6327XTSA1 |
MOSFET N-CH 200V 660MA SOT-223 |
|
|
Mfr.#: BSP297H6327XTSA1/SN OMO.#: OMO-BSP297H6327XTSA1-SN-1190 |
Nuevo y original |
|
|
Mfr.#: BSP297L6327 OMO.#: OMO-BSP297L6327-1190 |
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP297L6327HTSA1 |
MOSFET N-CH 200V 660MA SOT-223 |
|
|
Mfr.#: BSP297L6327XT OMO.#: OMO-BSP297L6327XT-1190 |
Nuevo y original |