FJN3306RTA

FJN3306RTA
Mfr. #:
FJN3306RTA
Fabricante:
ON Semiconductor / Fairchild
Descripción:
Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FJN3306RTA Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - Pre-polarizados
RoHS:
Y
Configuración:
Único
Polaridad del transistor:
NPN
Resistencia de entrada típica:
10 kOhms
Relación de resistencia típica:
0.21
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-92-3 Kinked Lead
Colector de CC / Ganancia base hfe Min:
68
Voltaje colector-emisor VCEO Max:
50 V
Corriente continua del colector:
0.1 A
Corriente máxima del colector de CC:
100 mA
Pd - Disipación de energía:
300 mW
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Ammo Pack
Ganancia de corriente CC hFE Max:
68
Emisor- Voltaje base VEBO:
10 V
Altura:
5.33 mm
Longitud:
5.2 mm
Escribe:
Transistor de silicio epitaxial NPN
Ancho:
4.19 mm
Marca:
ON Semiconductor / Fairchild
Tipo de producto:
BJTs - Transistores bipolares - Pre-polarizados
Cantidad de paquete de fábrica:
2000
Subcategoría:
Transistores
Unidad de peso:
0.010088 oz
Tags
FJN330, FJN33, FJN3, FJN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
Parte # Mfg. Descripción Valores Precio
FJN3306RTA
DISTI # FJN3306RTA-ND
ON SemiconductorTRANS PREBIAS NPN 300MW TO92-3
RoHS: Compliant
Min Qty: 16000
Container: Tape & Box (TB)
Limited Supply - Call
    FJN3306RTAFairchild Semiconductor CorporationSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
    RoHS: Compliant
    35000
    • 100:$0.0100
    • 500:$0.0100
    • 1000:$0.0100
    • 1:$0.0200
    • 25:$0.0200
    FJN3306RTA
    DISTI # 512-FJN3306RTA
    ON SemiconductorBipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
    RoHS: Compliant
    0
      Imagen Parte # Descripción
      FJN3305RTA

      Mfr.#: FJN3305RTA

      OMO.#: OMO-FJN3305RTA

      Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJN3310RTA

      Mfr.#: FJN3310RTA

      OMO.#: OMO-FJN3310RTA

      Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
      FJN3314RBU

      Mfr.#: FJN3314RBU

      OMO.#: OMO-FJN3314RBU-ON-SEMICONDUCTOR

      TRANS PREBIAS NPN 300MW TO92-3
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      Mfr.#: FJN3301

      OMO.#: OMO-FJN3301-1190

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      FJN3302

      Mfr.#: FJN3302

      OMO.#: OMO-FJN3302-1190

      Nuevo y original
      FJN3302RBU

      Mfr.#: FJN3302RBU

      OMO.#: OMO-FJN3302RBU-ON-SEMICONDUCTOR

      TRANS PREBIAS NPN 300MW TO92-3
      FJN3303BU

      Mfr.#: FJN3303BU

      OMO.#: OMO-FJN3303BU-ON-SEMICONDUCTOR

      TRANS NPN 400V 1.5A TO-92
      FJN3304RBU

      Mfr.#: FJN3304RBU

      OMO.#: OMO-FJN3304RBU-ON-SEMICONDUCTOR

      TRANS PREBIAS NPN 300MW TO92-3
      FJN3309RTA

      Mfr.#: FJN3309RTA

      OMO.#: OMO-FJN3309RTA-ON-SEMICONDUCTOR

      TRANS PREBIAS NPN 300MW TO92-3
      FJN3310RBU

      Mfr.#: FJN3310RBU

      OMO.#: OMO-FJN3310RBU-ON-SEMICONDUCTOR

      TRANS PREBIAS NPN 300MW TO92-3
      Disponibilidad
      Valores:
      Available
      En orden:
      4000
      Ingrese la cantidad:
      El precio actual de FJN3306RTA es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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