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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SI3460DV-T1-E3 DISTI # SI3460DV-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 5.1A 6TSOP Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI3460DV-T1-E3 DISTI # SI3460DV-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 5.1A 6TSOP Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI3460DV-T1-E3 DISTI # SI3460DV-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 5.1A 6TSOP Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI3460DV-T1-E3 DISTI # 70026204 | Vishay Siliconix | MOSFET,20V N-Channel 30MOHM@VGS=1.8V RoHS: Not Compliant | 0 |
|
| SI3460DV-T1-E3 | Vishay Dale | 5100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 63 |
|
| SI3460DVT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 5.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2430 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SI3460DV-T1-GE3 OMO.#: OMO-SI3460DV-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SI3460DDV-T1-GE3 |
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Mfr.#: SI3460DV-T1-E3 OMO.#: OMO-SI3460DV-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI3460DDV-T1-GE3 |
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Mfr.#: SI3460DV-T1-GE3 OMO.#: OMO-SI3460DV-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 20V 6.8A 2.0W 38mohm @ 1.8V |
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Mfr.#: SI3460DV-T1-E3 OMO.#: OMO-SI3460DV-T1-E3-VISHAY |
MOSFET N-CH 20V 5.1A 6TSOP |
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Mfr.#: SI3460DV-T1-E3 (DC200801 |
Nuevo y original |