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PSMN3R9-60PSQ

PSMN3R9-60PSQ
Mfr. #:
PSMN3R9-60PSQ
Fabricante:
Nexperia
Descripción:
MOSFET N-channel 60 V 3.9 mo FET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
PSMN3R9-60PSQ Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
PSMN3R9-60PSQ más información
Atributo del producto
Valor de atributo
Fabricante:
Nexperia
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
130 A
Rds On - Resistencia de la fuente de drenaje:
2.94 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
103 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
263 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Tipo de transistor:
1 N-Channel
Marca:
Nexperia
Otoño:
45 ns
Tipo de producto:
MOSFET
Hora de levantarse:
41.4 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
62.7 ns
Tiempo típico de retardo de encendido:
25.3 ns
Unidad de peso:
0.211644 oz
Tags
PSMN3R9-6, PSMN3R9, PSMN3, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 130 A, 60 V, 0.00294 Ohm, 10 V, 3 V Rohs Compliant: Yes
***peria
PSMN3R9-60PS - N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78
***et
Trans MOSFET N-CH 60V 130A 3-Pin TO-220AB Rail
*** Source Electronics
MOSFET N-CH 60V SOT78
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 130A, SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00294ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:263W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C
***nell
MOSFET, CANALE N, 60V, 130A, SOT78; Polarità Transistor:Canale N; Corrente Continua di Drain Id:130A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.00294ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:263W; Modello Case Transistor:TO-220AB; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Parte # Mfg. Descripción Valores Precio
PSMN3R9-60PSQ
DISTI # 1727-1133-ND		NexperiaMOSFET N-CH 60V SOT78
RoHS: Compliant
Min Qty: 1
Container: Tube		4986In Stock
  • 1000:$1.1221
  • 500:$1.3542
  • 100:$1.7412
  • 50:$1.9346
  • 1:$2.4000
PSMN3R9-60PSQ
DISTI # PSMN3R9-60PSQ		NexperiaPHSPSMN3R9-60PSQ - Rail/Tube (Alt: PSMN3R9-60PSQ)
RoHS: Compliant
Min Qty: 5000
Container: Tube		Americas - 0
  • 5000:$0.9249
  • 7000:$0.9129
  • 12000:$0.8899
  • 25000:$0.8679
  • 50000:$0.8469
PSMN3R9-60PSQ
DISTI # PSMN3R9-60PSQ		NexperiaPHSPSMN3R9-60PSQ (Alt: PSMN3R9-60PSQ)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 50:€1.0419
  • 100:€0.8679
  • 200:€0.8009
  • 300:€0.7439
  • 500:€0.6939
PSMN3R9-60PSQ
DISTI # 90W9538		NexperiaMOSFET Transistor, N Channel, 130 A, 60 V, 0.00294 ohm, 10 V, 3 V RoHS Compliant: Yes4783
  • 1:$1.7300
  • 10:$1.4700
  • 100:$1.1800
  • 500:$1.0900
  • 1000:$0.9770
  • 2500:$0.7930
  • 5000:$0.7680
PSMN3R9-60PSQ
DISTI # 771-PSMN3R9-60PSQ		NexperiaMOSFET N-channel 60 V 3.9 mo FET
RoHS: Compliant		0
  • 5000:$0.9150
PSMN3R9-60PSQ
DISTI # 2319896		NexperiaMOSFET, N-CH, 60V, 130A, SOT78
RoHS: Compliant		4783
  • 5:£2.0100
  • 25:£1.4400
  • 100:£1.3000
  • 250:£1.1600
  • 500:£1.0200
PSMN3R9-60PSQ
DISTI # 2319896		NexperiaMOSFET, N-CH, 60V, 130A, SOT78
RoHS: Compliant		4783
  • 1:$3.3200
  • 10:$2.8600
  • 25:$2.0800
  • 100:$1.7300
  • 250:$1.4300
  • 500:$1.3400
  • 1000:$1.2800
  • 2500:$1.2600
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Disponibilidad
Valores:
Available
En orden:
5000
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El precio actual de PSMN3R9-60PSQ es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,07 US$
2,07 US$
10
1,76 US$
17,60 US$
100
1,41 US$
141,00 US$
500
1,24 US$
620,00 US$
1000
1,03 US$
1 030,00 US$
2000
0,95 US$
1 900,00 US$
5000
0,92 US$
4 575,00 US$
10000
0,88 US$
8 800,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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