IRG7PH35UD1-EP

IRG7PH35UD1-EP
Mfr. #:
IRG7PH35UD1-EP
Fabricante:
Infineon Technologies
Descripción:
IGBT 1200V 50A 179W TO247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRG7PH35UD1-EP Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
IRG7PH35UD1-EP DatasheetIRG7PH35UD1-EP Datasheet (P4-P6)IRG7PH35UD1-EP Datasheet (P7-P9)IRG7PH35UD1-EP Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
IGBTs - Single
Serie
-
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247AD
Potencia máxima
179W
Tiempo de recuperación inverso trr
-
Colector-corriente-Ic-Max
50A
Voltaje-Colector-Emisor-Ruptura-Máx.
1200V
Tipo IGBT
Zanja
Colector de corriente pulsado Icm
150A
Vce-en-Max-Vge-Ic
2.2V @ 15V, 20A
Energía de conmutación
620μJ (off)
Gate-Charge
130nC
Td-encendido-apagado-25 ° C
-/160ns
Condición de prueba
600V, 20A, 10 Ohm, 15V
Disipación de potencia Pd
179 W
Colector-Emisor-Voltaje-VCEO-Max
1.2 kV
Colector-Emisor-Saturación-Voltaje
2.2 V
Corriente-de-colector-continuo-a-25-C
50 A
Tags
IRG7PH35UD1-EP, IRG7PH35UD1-E, IRG7PH35UD1, IRG7PH35UD, IRG7PH35, IRG7PH3, IRG7PH, IRG7P, IRG7, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 50A 179000mW 3-Pin(3+Tab) TO-247AD Tube
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
*** Source Electronics
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS | IGBT 1200V 50A 179W TO247
***ment14 APAC
INSULATED GATE BIPOLAR TRANSISTOR; Trans; INSULATED GATE BIPOLAR TRANSISTOR; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:179mW; Operating Temperature Range:-55°C to +150°C; No. of Pins:3
Parte # Mfg. Descripción Valores Precio
IRG7PH35UD1-EP
DISTI # IRG7PH35UD1-EP-ND
Infineon Technologies AGIGBT 1200V 50A 179W TO247
RoHS: Compliant
Min Qty: 350
Container: Tube
Limited Supply - Call
    IRG7PH35UD1-EP
    DISTI # 76R0795
    Infineon Technologies AGINSULATED GATE BIPOLAR TRANSISTOR,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:179W,Collector Emitter Voltage V(br)ceo:-,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes82
    • 1:$5.9600
    • 10:$5.0700
    • 25:$4.9800
    • 50:$4.6900
    • 100:$4.3900
    • 250:$4.1700
    • 500:$3.7100
    IRG7PH35UD1-EPInternational RectifierInsulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
    RoHS: Compliant
    951800
    • 1000:$2.9600
    • 500:$3.1200
    • 100:$3.2400
    • 25:$3.3800
    • 1:$3.6400
    IRG7PH35UD1-EP
    DISTI # 942-IRG7PH35UD1-EP
    Infineon Technologies AGIGBT Transistors IGBT DISCRETES
    RoHS: Compliant
    15
    • 1:$5.9600
    • 10:$5.0700
    • 25:$4.9800
    • 100:$4.3900
    • 250:$4.1700
    • 500:$3.7100
    • 1000:$3.1400
    • 2500:$2.9000
    IRG7PH35UD1-EP
    DISTI # 9074921P
    Infineon Technologies AGIGBT N-CHANNEL 1200V 50A TO-247AD, TU15
    • 10:£3.9550
    • 50:£3.8900
    • 100:£3.2900
    • 250:£3.1650
    IRG7PH35UD1-EP
    DISTI # 1822979
    Infineon Technologies AGINSULATED GATE BIPOLAR TRANSISTOR
    RoHS: Compliant
    82
    • 1:$9.4300
    • 10:$8.0300
    • 25:$7.8800
    • 100:$6.9600
    • 250:$6.6000
    • 500:$5.8700
    • 1000:$4.9700
    • 2500:$4.5900
    IRG7PH35UD1-EP
    DISTI # 1822979
    Infineon Technologies AGINSULATED GATE BIPOLAR TRANSISTOR
    RoHS: Compliant
    82
    • 1:£5.4490
    • 10:£4.0120
    • 100:£3.3320
    • 250:£3.2050
    • 500:£3.0500
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    IRG7PH30K10D

    Mfr.#: IRG7PH30K10D

    OMO.#: OMO-IRG7PH30K10D-1190

    Nuevo y original
    IRG7PH35UD1-EP,G7PH35UD1-E,IRG7PH35UD1-E

    Mfr.#: IRG7PH35UD1-EP,G7PH35UD1-E,IRG7PH35UD1-E

    OMO.#: OMO-IRG7PH35UD1-EP-G7PH35UD1-E-IRG7PH35UD1-E-1190

    Nuevo y original
    IRG7PH35UD1-EP,IRG7PH35U

    Mfr.#: IRG7PH35UD1-EP,IRG7PH35U

    OMO.#: OMO-IRG7PH35UD1-EP-IRG7PH35U-1190

    Nuevo y original
    IRG7PH37K10DEPBF

    Mfr.#: IRG7PH37K10DEPBF

    OMO.#: OMO-IRG7PH37K10DEPBF-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de IRG7PH35UD1-EP es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    4,18 US$
    4,18 US$
    10
    3,98 US$
    39,76 US$
    100
    3,77 US$
    376,65 US$
    500
    3,56 US$
    1 778,65 US$
    1000
    3,35 US$
    3 348,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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