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DMT6008LFG-7

DMT6008LFG-7
Mfr. #:
DMT6008LFG-7
Fabricante:
Diodes Incorporated
Descripción:
MOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
DMT6008LFG-7 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
DMT6008LFG-7 DatasheetDMT6008LFG-7 Datasheet (P4-P6)
ECAD Model:
Más información:
DMT6008LFG-7 más información
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerDI3333-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
13 A
Rds On - Resistencia de la fuente de drenaje:
6.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
22.4 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.2 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
DMT60
Tipo de transistor:
1 N-Channel
Marca:
Diodos incorporados
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4.4 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
24.4 ns
Tiempo típico de retardo de encendido:
7 ns
Unidad de peso:
0.002540 oz
Tags
DMT6008, DMT600, DMT60, DMT6, DMT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
Transistor, N-channel, enhancement mode MOSFET, MSL 1, 60V, 49A to 60A, SO-8
***ure Electronics
DMT6008LFG Series 60 V 13 A N-Channel Enhancement Mode Mosfet - PWDI3333-8
***ark
Mosfet, N-Ch, 60V, 60A, Powerdi 3333 Rohs Compliant: Yes
***des Inc SCT
60V N-CHANNEL ENHANCEMENT MODE MOSFET, 12±V VGS
*** Electronics
MOSFET N-CH 60V 13A PWDI3333-8
***el Electronic
CAP CER 8200PF 50V C0G/NP0 1206
***emi
N-Channel PowerTrench® MOSFET 60V, 65A, 5.6mΩ
***ow.cn
Trans MOSFET N-CH 60V 65A Automotive 8-Pin Power 56 EP T/R
***ark
Nmos Pwr56 60V 5.9 Mohm / Reel
***el Electronic
Embedded - Microcontrollers 3 (168 Hours) 80-LQFP 71 3K x 8 Internal POR, PWM, Voltage Detect, WDT Surface Mount Tray 16-Bit IC MCU 16BIT 64KB FLASH 80LQFP
***emi
Single N-Channel Power MOSFET 60V, 71A, 6.1mΩ Power MOSFET 60 V, 6.4 mohm, 67 A, Single N-Channel
***ical
Trans MOSFET N-CH 60V 17A Automotive 5-Pin(4+Tab) SO-FL T/R
*** Stop Electro
Power Field-Effect Transistor, 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 60V 17A, 71A 3.6W 61W Surface Mount 5-DFN (5x6) MOSFET
***enic
60V 17A 3.6W 6.1m´Î@10V35A 2V@250Ã×A N Channel DFN-5 MOSFETs ROHS
***nell
MOSFET, N-CH, 60V, 71A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 71A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0051ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 61W; Transistor Case Style: DFN; No. of Pins: 5Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***emi
Single N-Channel Power MOSFET 60V, 70A, 6.5mΩ Power MOSFET 60V, 70A, 6.5 mOhm, Single N-Channel, u8FL, Logic Level
***Yang
Trans MOSFET N-CH 60V 16A 8-Pin WDFN T/R - Tape and Reel
***roFlash
Power Field-Effect Transistor, 16A I(D), 60V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, AEC-Q101, 60V, 70A, WDFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 63W; Transistor Case Style: WDFN; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***et Europe
Trans MOSFET N-CH 60V 64A 8-Pin TDSON T/R
***nell
MOSFET, N-CH, 60V, 64A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0055ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 46W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ical
Trans MOSFET N-CH 60V 16.3A Automotive 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***et
MOSFET BVDSS: 41V~60V TO252 T&R 2.5K
***i-Key
MOSFET N-CH 60V 16.3A/70A TO252
***ical
Trans MOSFET N-CH 60V 14.8A Automotive 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***et
MOSFET BVDSS: 41V~60V TO252 T&R 2.5K
***i-Key
MOSFET N-CH 60V 14.8A/70A TO252
DMTx MOSFETs
Diodes Incorporated DMTx MOSFETs are N-channel enhancement mode MOSFETs with low on-resistance and fast switching. These MOSFETs are also designed to meet the stringent requirements of automotive applications. Diodes Incorporated DMTx MOSFETs are ideal for high-efficiency power management applications.
Gate Drivers
Diodes Incorporated Gate Drivers cover a multitude of applications in power systems and motor drives. These gate drivers act as the interface between microcontroller and IGBT or MOSFET power switches. Diodes Incorporated gate drivers provide optimum drive characteristics while controlling shoot-through.
Parte # Mfg. Descripción Valores Precio
DMT6008LFG-7
DISTI # DMT6008LFG-7DITR-ND		Diodes IncorporatedMOSFET N-CH 60V 13A PWDI3333-8
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		2000In Stock
  • 2000:$0.3190
DMT6008LFG-7
DISTI # DMT6008LFG-7DICT-ND		Diodes IncorporatedMOSFET N-CH 60V 13A PWDI3333-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2000In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
DMT6008LFG-7
DISTI # DMT6008LFG-7DIDKR-ND		Diodes IncorporatedMOSFET N-CH 60V 13A PWDI3333-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2000In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
DMT6008LFG-7
DISTI # DMT6008LFG-7		Diodes IncorporatedTrans MOSFET N-CH 60V 13A 8-Pin PowerDI 3333-8 T/R 2K - Tape and Reel (Alt: DMT6008LFG-7)
RoHS: Not Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 2000:$0.3009
  • 4000:$0.2859
  • 8000:$0.2729
  • 12000:$0.2609
  • 20000:$0.2549
DMT6008LFG-13
DISTI # 621-DMT6008LFG-13		Diodes IncorporatedMOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF
RoHS: Compliant		2841
  • 1:$0.8900
  • 10:$0.7350
  • 100:$0.4740
  • 1000:$0.3800
DMT6008LFG-7
DISTI # 621-DMT6008LFG-7		Diodes IncorporatedMOSFET 60V N-Ch Enh FET 12Vgs 13A 2713pF
RoHS: Compliant		0
  • 1:$0.7500
  • 10:$0.6200
  • 100:$0.4000
  • 1000:$0.3200
DMT6008LFG-7
DISTI # 9211167P		Zetex / Diodes IncN-CH ENHANCEMENT MODE MOSFET, RL3160
  • 100:£0.1980
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Mfr.#: HS3001

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Mfr.#: STTH1R02ZF

OMO.#: OMO-STTH1R02ZF-STMICROELECTRONICS

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HSP061-2M6

Mfr.#: HSP061-2M6

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Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de DMT6008LFG-7 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,74 US$
0,74 US$
10
0,62 US$
6,20 US$
100
0,40 US$
40,00 US$
1000
0,32 US$
320,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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