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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPI041N12N3GAKSA1 DISTI # V99:2348_06377393 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 500 |
|
| IPI041N12N3GAKSA1 DISTI # V36:1790_06377393 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 300 |
|
| IPI041N12N3GAKSA1 DISTI # IPI041N12N3GAKSA1-ND | Infineon Technologies AG | MOSFET N-CH 120V 120A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube | Temporarily Out of Stock |
|
| IPI041N12N3GAKSA1 DISTI # 30182284 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 500 |
|
| IPI041N12N3GAKSA1 DISTI # 26193810 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 300 |
|
| IPI041N12N3GAKSA1 DISTI # IPI041N12N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI041N12N3GAKSA1) RoHS: Compliant Min Qty: 500 Container: Tube | Americas - 0 |
|
| IPI041N12N3GAKSA1 DISTI # SP000652748 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A 3-Pin(3+Tab) TO-262 (Alt: SP000652748) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| IPI041N12N3GAKSA1. DISTI # 32AC0679 | Infineon Technologies AG | Continuous Drain Current Id:120A,Drain Source Voltage Vds:120V,Automotive Qualification Standard:- | 0 |
|
| IPI041N12N3G | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 493 |
|
| IPI041N12N3GAKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 27450 |
|
| IPI041N12N3 G DISTI # 726-IPI041N12N3G | Infineon Technologies AG | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 RoHS: Compliant | 111 |
|
| IPI041N12N3GAKSA1 DISTI # 726-IPI041N12N3GAKSA | Infineon Technologies AG | MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 RoHS: Compliant | 500 |
|
| IPI041N12N3GAKSA1 DISTI # C1S322000399073 | Infineon Technologies AG | Trans MOSFET N-CH 120V 120A Automotive 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant | 500 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: IPI041N12N3 G OMO.#: OMO-IPI041N12N3-G |
MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 |
|
|
Mfr.#: IPI041N12N3GAKSA1 OMO.#: OMO-IPI041N12N3GAKSA1 |
MOSFET N-Ch 120V 120A I2PAK-3 OptiMOS 3 |
|
Mfr.#: IPI041N12N3 OMO.#: OMO-IPI041N12N3-1190 |
Nuevo y original |
|
|
Mfr.#: IPI041N12N3G OMO.#: OMO-IPI041N12N3G-1190 |
Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
Mfr.#: IPI041N12N3GAKSA1 |
MOSFET N-CH 120V 120A TO262-3 |
