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FCPF190N60-F152

FCPF190N60-F152
Mfr. #:
FCPF190N60-F152
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 600V, 20.2A, 199mOhm SuperFET II MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FCPF190N60-F152 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FCPF190N60-F152 DatasheetFCPF190N60-F152 Datasheet (P4-P6)FCPF190N60-F152 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
20.2 A
Rds On - Resistencia de la fuente de drenaje:
199 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3.5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
57 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
39 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
21 S
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
10 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
64 ns
Tiempo típico de retardo de encendido:
20 ns
Parte # Alias:
FCPF190N60_F152
Unidad de peso:
0.090478 oz
Tags
FCPF190N60-F, FCPF190N60, FCPF19, FCPF1, FCPF, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel SuperFET® II MOSFET 600V, 20.2A, 199mΩ
***ical
Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***el Electronic
Chip Resistor - Surface Mount 100 k Ω 0201 (0603 Metric) ±1% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RESISTOR, 0201, 0.05W, 1%, 100K
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-220
***Yang
Trans MOSFET N-CH 600V 22A 3-Pin TO-220 Tube - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 22A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 16 A, 199 mΩ, TO-220F
***et
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220F Rail
*** Stop Electro
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 600V, 16A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:35.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Pulse Current Idm:48A
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220F
***ical
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Rail
***r Electronics
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220F; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:20A; Resistance, Rds on:0.19ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-220F; Current, Idm pulse:60A; Energy, avalanche repetitive Ear:20.8mJ; Pin configuration:1(G), 2(D), 3(S); Power, Pd:39W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds max:600V; Voltage, Vgs max:5V
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***icroelectronics
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP
*** Source Electronics
MOSFET N-CH 600V 17A TO-220FP / Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N CH, 600V, 17A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ure Electronics
Single N-Channel 600 V 160 mOhm 44 nC CoolMOS™ Power Mosfet - TO-220-3FP
***et
CoolMOS P6 Power Transistor N-Channel 600V 68A 3-Pin TO-220FP
***ow.cn
Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220FP Tube
***et Japan
Trans MOSFET N-CH 600(Min)V 10.4A 3-Pin TO-220 FP Tube
***ark
MOSFET, N-CH, 600V, 23.8A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:23.8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***icroelectronics
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220 package
***ical
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB Tube
***el Electronic
Dual-Output, 2-A/1-A Low Dropout Voltage Regulators with Integrated SVS 24-HTSSOP -40 to 125
***ure Electronics
Single N-Channel 650 V 0.15 O 190 W Flange Mount Power Mosfet - TO-220-3
***ark
MOSFET, N-CH, 600V, 22A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:22A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Parte # Mfg. Descripción Valores Precio
FCPF190N60-F152
DISTI # 32400928		ON SemiconductorSF2 600V 190MOHM F TO220F7000
  • 1000:$1.3680
FCPF190N60-F152
DISTI # FCPF190N60-F152-ND		ON SemiconductorMOSFET N-CH 600V 20.2A TO-220F
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.3680
FCPF190N60-F152
DISTI # V36:1790_06359294		ON SemiconductorSF2 600V 190MOHM F TO220F0
  • 1000000:$1.0890
  • 500000:$1.0910
  • 100000:$1.1900
  • 10000:$1.3430
  • 1000:$1.3680
FCPF190N60_F152
DISTI # FCPF190N60-F152		ON SemiconductorTrans MOSFET N-CH 600V 20.2A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF190N60-F152)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.0900
  • 2000:$1.0900
  • 4000:$1.0900
  • 6000:$1.0900
  • 10000:$1.0900
FCPF190N60_F152
DISTI # FCPF190N60F152		ON SemiconductorTrans MOSFET N-CH 600V 20.2A 3-Pin TO-220F Tube - Bulk (Alt: FCPF190N60F152)
Min Qty: 1
Container: Bulk		Americas - 0
    FCPF190N60-F152
    DISTI # 48AC0853    		ON SemiconductorSF2 600V 190MOHM F TO220F / TUBE0
    • 1000:$1.7100
    • 500:$1.8100
    • 250:$1.9400
    • 100:$2.1200
    • 1:$2.5600
    FCPF190N60-F152
    DISTI # 512-FCPF190N60_F152    		ON SemiconductorMOSFET 600V, 20.2A, 199mOhm SuperFET II MOSFET
    RoHS: Compliant    		984
    • 1:$2.6400
    • 10:$2.2400
    • 100:$1.7900
    • 500:$1.5700
    • 1000:$1.3000
    • 2000:$1.2100
    • 5000:$1.1600
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    Mfr.#: STF28N65M2

    OMO.#: OMO-STF28N65M2

    		 MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP package
    STF24N60M2

    Mfr.#: STF24N60M2

    OMO.#: OMO-STF24N60M2

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    STP65NF06

    Mfr.#: STP65NF06

    OMO.#: OMO-STP65NF06

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    STF28N65M2

    Mfr.#: STF28N65M2

    OMO.#: OMO-STF28N65M2-STMICROELECTRONICS

    		 MOSFET N-CH 650V 20A TO220FP
    SIHA22N60AEL-GE3

    Mfr.#: SIHA22N60AEL-GE3

    OMO.#: OMO-SIHA22N60AEL-GE3-VISHAY

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    Disponibilidad
    Valores:
    984
    En orden:
    2967
    Ingrese la cantidad:
    El precio actual de FCPF190N60-F152 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,64 US$
    2,64 US$
    10
    2,24 US$
    22,40 US$
    100
    1,79 US$
    179,00 US$
    500
    1,57 US$
    785,00 US$
    1000
    1,30 US$
    1 300,00 US$
    2000
    1,21 US$
    2 420,00 US$
    5000
    1,16 US$
    5 800,00 US$
    10000
    1,12 US$
    11 200,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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